DME914C1 - параметры, поиск аналогов, даташиты транзистора

DME914C1 Datasheet (PDF)

..1. Size:490K panasonic
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This product complies with the RoHS Directive (EU 2002/95/EC).DME914C1Silicon PNP epitaxial planar type (Tr1)Silicon NPN epitaxial planar type (Tr2)For digital circuits Features Package High forward current transfer ratio hFE Code Low collector-emitter saturation voltage VCE(sat) SSMini6-F3-B Contributes to miniaturization of sets, reduction of component

9.1. Size:260K fairchild semi
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February 2015FDME910PZTP-Channel PowerTrench MOSFET-20 V, -8 A, 24 mFeatures General DescriptionThis device is designed specifically for battery charging or load Max rDS(on) = 24 m at VGS = -4.5 V, ID = -8 Aswitching in cellular handset and other ultraportable applications. Max rDS(on) = 31 m at VGS = -2.5 V, ID = -7 AIt features a MOSFET with low on-state resistance

9.2. Size:425K onsemi
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FDME910PZTP-Channel PowerTrench MOSFETGeneral Description-20 V, -8 A, 24 mThis device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications.FeaturesIt features a MOSFET with low on-state resistance and zener Max rDS(on) = 24 m at VGS = -4.5 V, ID = -8 Adiode protection against ESD. The MicroFET 1.6x1.6 T

Другие транзисторы... DMC505E0 , DMC505E2 , DMC50601 , DMC506E2 , DME50101 , DME50501 , DME50B01 , DME50C01 , A1941 , DMG20102 , DMG20401 , DMG20402 , DMG204A0 , DMG204B0 , DMG204B1 , DXT13003DG , DXT13003DK .