DME914C1 Datasheet, Equivalent, Cross Reference Search
Type Designator: DME914C1
SMD Transistor Code: T5
Material of Transistor: Si
Polarity: NPN*PNP
Maximum Collector Power Dissipation (Pc): 0.125 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 270
Noise Figure, dB: -
Package: SOT-563
DME914C1 Transistor Equivalent Substitute - Cross-Reference Search
DME914C1 Datasheet (PDF)
dme914c1.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DME914C1Silicon PNP epitaxial planar type (Tr1)Silicon NPN epitaxial planar type (Tr2)For digital circuits Features Package High forward current transfer ratio hFE Code Low collector-emitter saturation voltage VCE(sat) SSMini6-F3-B Contributes to miniaturization of sets, reduction of component
fdme910pzt.pdf
February 2015FDME910PZTP-Channel PowerTrench MOSFET-20 V, -8 A, 24 mFeatures General DescriptionThis device is designed specifically for battery charging or load Max rDS(on) = 24 m at VGS = -4.5 V, ID = -8 Aswitching in cellular handset and other ultraportable applications. Max rDS(on) = 31 m at VGS = -2.5 V, ID = -7 AIt features a MOSFET with low on-state resistance
fdme910pzt.pdf
FDME910PZTP-Channel PowerTrench MOSFETGeneral Description-20 V, -8 A, 24 mThis device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications.FeaturesIt features a MOSFET with low on-state resistance and zener Max rDS(on) = 24 m at VGS = -4.5 V, ID = -8 Adiode protection against ESD. The MicroFET 1.6x1.6 T
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
