DME914C1 Specs and Replacement
Type Designator: DME914C1
SMD Transistor Code: T5
Material of Transistor: Si
Polarity: NPN*PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.125 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 270
Package: SOT-563
DME914C1 Substitution
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DME914C1 datasheet
This product complies with the RoHS Directive (EU 2002/95/EC). DME914C1 Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) For digital circuits Features Package High forward current transfer ratio hFE Code Low collector-emitter saturation voltage VCE(sat) SSMini6-F3-B Contributes to miniaturization of sets, reduction of component ... See More ⇒
February 2015 FDME910PZT P-Channel PowerTrench MOSFET -20 V, -8 A, 24 m Features General Description This device is designed specifically for battery charging or load Max rDS(on) = 24 m at VGS = -4.5 V, ID = -8 A switching in cellular handset and other ultraportable applications. Max rDS(on) = 31 m at VGS = -2.5 V, ID = -7 A It features a MOSFET with low on-state resistance ... See More ⇒
FDME910PZT P-Channel PowerTrench MOSFET General Description -20 V, -8 A, 24 m This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. Features It features a MOSFET with low on-state resistance and zener Max rDS(on) = 24 m at VGS = -4.5 V, ID = -8 A diode protection against ESD. The MicroFET 1.6x1.6 T... See More ⇒
Detailed specifications: DMC505E0, DMC505E2, DMC50601, DMC506E2, DME50101, DME50501, DME50B01, DME50C01, D882, DMG20102, DMG20401, DMG20402, DMG204A0, DMG204B0, DMG204B1, DXT13003DG, DXT13003DK
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