L8550HSLT1G datasheet, аналоги, основные параметры

Наименование производителя: L8550HSLT1G  📄📄 

Маркировка: 1HH

Тип материала: Si

Полярность: PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.225 W

Макcимально допустимое напряжение коллектор-база (Ucb): 40 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 1.5 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 300

Корпус транзистора: SOT-23

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L8550HSLT1G даташит

 ..1. Size:84K  lrc
 l8550hplt1g l8550hqlt1g l8550hrlt1g l8550hslt1g.pdf pdf_icon

L8550HSLT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8550HPLT1G Series PNP Silicon S-L8550HPLT1G FEATURE Series High current capacity in compact package. Epitaxial planar type. PNP complement L8550H 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requir

 ..2. Size:84K  lrc
 l8550hplt1g l8550hplt3g l8550hqlt1g l8550hqlt3g l8550hrlt1g l8550hrlt3g l8550hslt1g l8550hslt3g.pdf pdf_icon

L8550HSLT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8550HPLT1G Series PNP Silicon S-L8550HPLT1G FEATURE Series High current capacity in compact package. Epitaxial planar type. PNP complement L8550H 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requir

 ..3. Size:83K  lrc
 l8550hslt1g.pdf pdf_icon

L8550HSLT1G

LESHAN RADIO COMPANY, LTD. L8550HPLT1G General Purpose Transistors Series S-L8550HPLT1G PNP Silicon FEATURE Series High current capacity in compact package. Epitaxial planar type. 3 PNP complement L8550H We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requir

 8.1. Size:89K  lrc
 l8550hplt1g.pdf pdf_icon

L8550HSLT1G

LESHAN RADIO COMPANY, LTD. L8550HPLT1G General Purpose Transistors Series PNP Silicon S-L8550HPLT1G Series FEATURE High current capacity in compact package. Epitaxial planar type. 3 PNP complement L8550H We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requirem

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: L2SC3838QLT1G, L2SC4226T1G, L2SC5343QLT1G, L2SC5343RLT1G, L2SC5343SLT1G, L2SC5635LT1G, L2SD1781KQLT1G, L8050HSLT1G, D880, L9012, L9013, L9014, LBC807-16DMT1G, LBC807-25DMT1G, LBC807-40DMT1G, LBC817-16DMT1G, LBC817-16DPMT1G