All Transistors. L8550HSLT1G Datasheet

 

L8550HSLT1G Datasheet and Replacement


   Type Designator: L8550HSLT1G
   SMD Transistor Code: 1HH
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 300
   Noise Figure, dB: -
   Package: SOT-23
 
   - BJT ⓘ Cross-Reference Search

   

L8550HSLT1G Datasheet (PDF)

 ..1. Size:84K  lrc
l8550hplt1g l8550hqlt1g l8550hrlt1g l8550hslt1g.pdf pdf_icon

L8550HSLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8550HPLT1GSeriesPNP SiliconS-L8550HPLT1GFEATURESeries High current capacity in compact package. Epitaxial planar type. PNP complement: L8550H 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requir

 ..2. Size:84K  lrc
l8550hplt1g l8550hplt3g l8550hqlt1g l8550hqlt3g l8550hrlt1g l8550hrlt3g l8550hslt1g l8550hslt3g.pdf pdf_icon

L8550HSLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8550HPLT1GSeriesPNP SiliconS-L8550HPLT1GFEATURESeries High current capacity in compact package. Epitaxial planar type. PNP complement: L8550H 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requir

 ..3. Size:83K  lrc
l8550hslt1g.pdf pdf_icon

L8550HSLT1G

LESHAN RADIO COMPANY, LTD.L8550HPLT1GGeneral Purpose TransistorsSeriesS-L8550HPLT1GPNP SiliconFEATURESeries High current capacity in compact package. Epitaxial planar type.3 PNP complement: L8550H We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site1and Control Change Requir

 8.1. Size:89K  lrc
l8550hplt1g.pdf pdf_icon

L8550HSLT1G

LESHAN RADIO COMPANY, LTD.L8550HPLT1GGeneral Purpose TransistorsSeriesPNP Silicon S-L8550HPLT1GSeriesFEATURE High current capacity in compact package. Epitaxial planar type.3 PNP complement: L8550H We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requirem

Datasheet: L2SC3838QLT1G , L2SC4226T1G , L2SC5343QLT1G , L2SC5343RLT1G , L2SC5343SLT1G , L2SC5635LT1G , L2SD1781KQLT1G , L8050HSLT1G , 2SD669A , L9012 , L9013 , L9014 , LBC807-16DMT1G , LBC807-25DMT1G , LBC807-40DMT1G , LBC817-16DMT1G , LBC817-16DPMT1G .

History: BU2708AX | 2N1716

Keywords - L8550HSLT1G transistor datasheet

 L8550HSLT1G cross reference
 L8550HSLT1G equivalent finder
 L8550HSLT1G lookup
 L8550HSLT1G substitution
 L8550HSLT1G replacement

 

 
Back to Top

 


 
.