Биполярный транзистор M8050-C
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: M8050-C
Маркировка: Y11
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.625
W
Макcимально допустимое напряжение коллектор-база (Ucb): 40
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6
V
Макcимальный постоянный ток коллектора (Ic): 0.8
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 150
MHz
Статический коэффициент передачи тока (hfe): 120
Корпус транзистора:
TO-92
Аналоги (замена) для M8050-C
M8050-C
Datasheet (PDF)
..1. Size:271K mcc
m8050-c.pdf 
MCCMicro Commercial ComponentsTMM8050-C20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311M8050-DPhone: (818) 701-4933Fax: (818) 701-4939Features TO-92 Plastic-Encapsulate TransistorsNPN Silicon Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.8APlastic-Encapsulate Collector-base Voltage 40V Operating an
8.1. Size:271K mcc
m8050-d.pdf 
MCCMicro Commercial ComponentsTMM8050-C20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311M8050-DPhone: (818) 701-4933Fax: (818) 701-4939Features TO-92 Plastic-Encapsulate TransistorsNPN Silicon Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.8APlastic-Encapsulate Collector-base Voltage 40V Operating an
9.1. Size:365K secos
m8050.pdf 
M8050 40V, 0.8A, 200mW NPN Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES A Power dissipation L33Top View C BMARKING 11 2Product Marking Code2K EM8050 Y11DH JF GPACKAGE INFORMATION Millimeter MillimeterPackage MPQ Leader Size REF. REF. Min.
9.2. Size:512K jiangsu
m8050s.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 M8050S TRANSISTOR (NPN) 1.EMITTER FEATURES Power Dissipation 2. COLLECTOR3. BASEMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Curr
9.3. Size:1378K jiangsu
m8050.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 M8050 TRANSISTOR (NPN) 1.EMITTER FEATURES Power Dissipation 2. BASE 3. COLLECTOR Equivalent Circuit M8050M8050=Device code Solid dot = Green molding compound device, Z if none, the normal device Z=Range of hFEXXX=Code 11ORDERING INFORMATION Pa
9.4. Size:479K htsemi
m8050.pdf 
M8050TRANSISTOR(NPN)SOT-23 FEATURES Power dissipation 1. BASE 2. EMITTER MARKING: Y11 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.8 APC Collector Power Dissipation 0.2 W Tj Junction
9.5. Size:292K gsme
m8050.pdf 
Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM8050FEATURESFEATURES FEATURESLow Frequency Power Amplifier Suitable for Driver Stage of Small Motor Complementary to GM8550 GM8550 (Ta=25 )
9.6. Size:234K lge
m8050 sot-23.pdf 
M8050 SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Power dissipation MARKING: Y11 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.8 APC
9.7. Size:200K lge
m8050 to-92.pdf 
M8050(NPN)TO-92 TransistorsTO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 800 mA PC Collector Power Dissipation 625 mW Dimensions i
9.8. Size:325K wietron
m8050lt1.pdf 
M8050LT1NPN General Purpose Transistors3P b Lead(Pb)-Free12SOT-23ValueVCEO 25405.0 8003002.44170.125100 40 5.01000.15u35u4.0 0.15WEITRON1/4 15-Jul-10http://www.weitron.com.twM8050LT1ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)CharacteristicsSymbol Max UnitMMinON CHARACTERISTICSDC Current Gain-
9.9. Size:210K globaltech semi
gstm8050lt1.pdf 
GSTM8050LT1 NPN General Purpose Transistor Product Description Features This device is designed as a general purpose Collector-Emitter Voltage : 25V amplifier and switch. Collector Current : 800mA Lead(Pb)-FreePackages & Pin Assignments SOT-23 Pin Description1 Base 2 Emitter 3 Collector Marking Information P/N Package Rank Part Marking GSTM8050LT1F SOT-23 P 80P
9.10. Size:2180K born
m8050.pdf 
M8050Transistors SOT-23 Plastic-Encapsulate Transistors(NPN) RHOS SOT-23 FeaturesComplimentary to M8550 Collector Current: IC=0.8A Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Parameter ValueSymbol Units1. BASE 40 VCBO Collector-Base Voltage V 2. EMITTER 25VCEO Collector-Emitter Voltage V 3. COLLECTOR VEBO Emit
9.11. Size:253K cn haohai electr
hs8050 hs8050a hm8050 hmbt8050 hss8050 hmc6802.pdf 
HMBT8050NPN-TRANSISTORNPN, 8050 NPN NPN Plastic-Encapsulate Transistors SMDHS8050, HS8050AHM8050, HMBT8050High breakdown voltageLow collector-emitter saturation voltageHSS8050, HMC6802Complementary to HMBT8550Transistor Polarity: NPN
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