M8550S - описание и поиск аналогов

 ..1. Size:346K  jiangsu
 m8550s.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors M8550S TRANSISTOR (PNP) TO-92 FEATURES 1.EMITTER Power Dissipation 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3.BASE Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -6 V IC Collecto

 9.1. Size:738K  secos
 m8550.pdf 

M8550 -40V, -0.8A, 200mW PNP Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Power dissipation A L 3 3 MARKING Top View C B 1 1 2 Product Marking Code 2 K E M8550 Y21 D H J F G CLASSIFICATION OF hFE(2) Product-Rank M8550-L M8550-H Millimeter Millimeter REF. R

 9.2. Size:818K  secos
 m8550t.pdf 

M8550T -0.8A , -40V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURE A D Power Dissipation B E C F G H 1Emitter 1 1 1 2Base 2 2 2 3Collector 3 3 3 J Collector 3 1 Base 2 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise specified

 9.3. Size:473K  jiangsu
 m8550.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 M8550 TRANS ISTOR(PNP) FEATURES Power dissipation 1. BASE 2. EMITTER MARKING Y21 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage

 9.4. Size:721K  htsemi
 m8550.pdf 

M8 550 TRANSISTOR(PNP) SOT-23 FEATURES Power dissipation MARKING Y21 1. BASE 2. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -0.8 A PC Collector power dissipation 200 mW Tj Ju

 9.5. Size:292K  gsme
 m8550.pdf 

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8550 FEATURES FEATURES FEATURES Low Frequency Power Amplifier Suitable for Driver Stage lf Small Motor Complementary to GM8050 GM8050 (Ta=25 )

 9.6. Size:189K  lge
 m8550 to-92.pdf 

M8550(PNP) TO-92 Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -800 mA Dimensions in inches and (millimeters) PC Colle

 9.7. Size:414K  lge
 m8550 sot-23.pdf 

M8550 SOT-23 Transistor(PNP) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features Power dissipation MARKING Y21 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -0.8 A

 9.8. Size:429K  wietron
 m8550lt1.pdf 

M8550LT1 PNP General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 Value V CEO 25 40 5.0 800 300 2.4 417 0.1 25 100 40 5.0 100 0.15 u 35 u 4.0 0.15 WEITRON 1/4 15-Jul-10 http //www.weitron.com.tw M8550LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS DC Current Gain -

 9.9. Size:1130K  born
 m8550.pdf 

M8550 Transistors SOT-23 Plastic-Encapsulate Transistors(PNP) RHOS SOT-23 Features Complimentary to M8050 Collector Current I =0.8A Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Units Symbol Value Parameter V 1. BASE VCBO Collector-Base Voltage -40 V 2. EMITTER VCEO Collector-Emitter Voltage -25 3. COLLECTOR V VEBO Emitter-Bas

 9.10. Size:1849K  cn dowo
 m8550.pdf 

 9.11. Size:253K  cn haohai electr
 hs8550 hs8550a hm8550 hmbt8550 hss8550 hma6801.pdf 

HMBT8550 PNP-TRANSISTOR PNP, 8550 PNP PNP Plastic-Encapsulate Transistors SMD HS8550, HS8550A HM8550, HMBT8550 High breakdown voltage Low collector-emitter saturation voltage HSS8550, HMA6801 Complementary to HMBT8050 Transistor Polarity PNP