M8550S Datasheet and Replacement

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors M8550S TRANSISTOR (PNP) TO-92 FEATURES 1.EMITTER Power Dissipation 2. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) 3.BASE Symbol Parameter Value UnitVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -6 V IC Collecto

M8550 -40V, -0.8A, 200mW PNP Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Power dissipation AL33MARKING Top View C B11 2Product Marking Code 2K EM8550 Y21 DH JF GCLASSIFICATION OF hFE(2) Product-Rank M8550-L M8550-H Millimeter Millimeter REF. R

M8550T -0.8A , -40V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURE AD Power Dissipation BE CFG H1Emitter 1112Base 2223Collector 333J Collector 3 1 Base 2 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise specified

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 M8550 TRANS ISTOR(PNP) FEATURES Power dissipation 1. BASE 2. EMITTER MARKING: Y21 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage

M8 550TRANSISTOR(PNP)SOT-23 FEATURES Power dissipation MARKING: Y21 1. BASE 2. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -0.8 A PC Collector power dissipation 200 mW Tj Ju

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM8550FEATURESFEATURES FEATURESLow Frequency Power Amplifier Suitable for Driver Stage lf Small Motor Complementary to GM8050 GM8050 (Ta=25 )

M8550(PNP)TO-92 TransistorsTO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -800 mA Dimensions in inches and (millimeters)PC Colle

M8550 SOT-23 Transistor(PNP)1. BASE SOT-232. EMITTER 3. COLLECTOR Features Power dissipation MARKING: Y21 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V Dimensions in inches and (millimeters)VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -0.8 A

M8550LT1PNP General Purpose Transistors3P b Lead(Pb)-Free12SOT-23ValueVCEO 25405.0 8003002.44170.125100 40 5.01000.15u35u4.0 0.15WEITRON1/4 15-Jul-10http://www.weitron.com.twM8550LT1ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)CharacteristicsSymbol Max UnitMinON CHARACTERISTICSDC Current Gain-

M8550Transistors SOT-23 Plastic-Encapsulate Transistors(PNP) RHOS SOT-23 FeaturesComplimentary to M8050 Collector Current: I =0.8AMaximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) UnitsSymbol ValueParameterV 1. BASE VCBO Collector-Base Voltage -40V 2. EMITTER VCEO Collector-Emitter Voltage -253. COLLECTOR V VEBO Emitter-Bas

HMBT8550PNP-TRANSISTORPNP, 8550 PNP PNP Plastic-Encapsulate Transistors SMDHS8550, HS8550AHM8550, HMBT8550High breakdown voltageLow collector-emitter saturation voltageHSS8550, HMA6801Complementary to HMBT8050Transistor Polarity: PNP