WBN13002LD datasheet, аналоги, основные параметры

Наименование производителя: WBN13002LD  📄📄 

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 15 W

Макcимально допустимое напряжение коллектор-база (Ucb): 350 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 200 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V

Макcимальный постоянный ток коллектора (Ic): 1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 4 MHz

Статический коэффициент передачи тока (hFE): 8

Корпус транзистора: TO-92

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WBN13002LD даташит

 ..1. Size:317K  winsemi
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WBN13002LD

WBN13002LD WBN13002LD WBN13002LD WBN13002LD High Voltage Fast -Switching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage , High speed Switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings Symbol P

 6.1. Size:378K  winsemi
 wbn13002.pdf pdf_icon

WBN13002LD

WBN13002 WBN13002 WBN13002 WBN13002 High Voltage Fast-Switching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings Symbol Parameter T

 7.1. Size:308K  winsemi
 wbn13003b2d.pdf pdf_icon

WBN13002LD

WBN13003B2D WBN13003B2D WBN13003B2D WBN13003B2D High Voltage Fast -Switching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in freewheeling diode General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system,switching mode power supply.

 7.2. Size:268K  winsemi
 wbn13003b.pdf pdf_icon

WBN13002LD

WBN13003B WBN13003B WBN13003B WBN13003B HighVoltageFast-SwitchingNPNPowerTransistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system,switching mode power supply. Absolute Maximum Ratings Symbol Parameter Tes

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: VT6X1, VT6X11, VT6X12, VT6X2, VT6Z1, VT6Z2, WBD13003D, WBN13002, 2SC5200, WBN13003A1, WBN13003B, WBN13003B2D, WBP13003D, WBP13005D, WBP13005D1, WBP13007-K, WBP13009-K