Биполярный транзистор WBN13003A1 Даташит. Аналоги
Наименование производителя: WBN13003A1
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 18 W
Макcимально допустимое напряжение коллектор-база (Ucb): 600 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V
Макcимальный постоянный ток коллектора (Ic): 1.2 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 4 MHz
Статический коэффициент передачи тока (hfe): 10
Корпус транзистора: TO-92
- подбор биполярного транзистора по параметрам
WBN13003A1 Datasheet (PDF)
wbn13003a1.pdf

WBN13003A1WBN13003A1WBN13003A1WBN13003A1High Voltage Fast-Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage , High speedswitching Characteristics required such as lightingsystem,switching mode power supply.Absolute Maximum RatingsSymbol Par
wbn13003b2d.pdf

WBN13003B2DWBN13003B2DWBN13003B2DWBN13003B2DHigh Voltage Fast -Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in freewheeling diodeGeneral DescriptionThis Device is designed for high voltage, High speed switchingcharacteristics required such as lighting system,switching modepower supply.
wbn13003b.pdf

WBN13003BWBN13003BWBN13003BWBN13003BHighVoltageFast-SwitchingNPNPowerTransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, High speedswitching characteristics required such as lightingsystem,switching mode power supply.Absolute Maximum RatingsSymbol Parameter Tes
wbn13002.pdf

WBN13002WBN13002WBN13002WBN13002High Voltage Fast-Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, High speed switchingcharacteristics required such as lighting system, switching modepower supply.Absolute Maximum RatingsSymbol Parameter T
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: RT3YB7M | BC848CW-G | 2SA815 | 2SA1706T-AN | 2SA795A | 3DG2413K
History: RT3YB7M | BC848CW-G | 2SA815 | 2SA1706T-AN | 2SA795A | 3DG2413K



Список транзисторов
Обновления
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
2sc632 | mje15030 transistor equivalent | 13003b | 2n6121 | 2sc1312 | bf495 transistor equivalent | 2sc1313 | 2sb560 replacement