Справочник транзисторов. WBP13005D1

 

Биполярный транзистор WBP13005D1 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: WBP13005D1
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 75 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 700 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V
   Макcимальный постоянный ток коллектора (Ic): 4 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 4 MHz
   Ёмкость коллекторного перехода (Cc): 6.5 pf
   Статический коэффициент передачи тока (hfe): 10
   Корпус транзистора: TO-220HW

 Аналоги (замена) для WBP13005D1

 

 

WBP13005D1 Datasheet (PDF)

 ..1. Size:409K  winsemi
wbp13005d1.pdf

WBP13005D1
WBP13005D1

WBP13005D1WBP13005D1WBP13005D1WBP13005D1High Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeatures Very High Switching Speed Minimum Lot-to-Lot hFE Variation Wide Reverse Bias SOA Built-in freewheeling diodeGeneral De

 5.1. Size:392K  winsemi
wbp13005d.pdf

WBP13005D1
WBP13005D1

WBP13005DWBP13005DWBP13005DWBP13005DHigh Voltage Fast -Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in free wheeling diodeGeneral DescriptionThis Device is designed for high Voltage, High speedswitching Characteristics required such as lightingsystem ,switching mode power supply.Absol

 7.1. Size:395K  winsemi
wbp13003d.pdf

WBP13005D1
WBP13005D1

WBP13003DWBP13003DWBP13003DWBP13003DHighVoltageFast-SwitchingNPNPowerTransistorFeaturessymbolsymbolsymbolsymbol Very High Switching Speed2.Collector High Voltage Capability Wide Reverse Bias SOA 1.Base Built-in free wheeling diode3.EmitterGeneral DescriptionThis Device is designed for high Voltage ,High speedswitching Characteristics required such

 7.2. Size:328K  winsemi
wbp13009-k.pdf

WBP13005D1
WBP13005D1

WBP13009-KWBP13009-KWBP13009-KWBP13009-KHigh Voltage Fast- Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, High speedSwitching characteristics required such as lightingsystem,switching mode power supply.Absolute Maximum RatingsSymbol Par

 7.3. Size:369K  winsemi
wbp13007-k.pdf

WBP13005D1
WBP13005D1

WBP13007-KHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOABBBBCCCCGeneral Description EEEETO220TO220TO220TO220This

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