Справочник транзисторов. MJ11032G

 

Биполярный транзистор MJ11032G - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: MJ11032G
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 300 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 120 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 120 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 50 A
   Предельная температура PN-перехода (Tj): 200 °C
   Статический коэффициент передачи тока (hfe): 1000
   Корпус транзистора: TO3

 Аналоги (замена) для MJ11032G

 

 

MJ11032G Datasheet (PDF)

 ..1. Size:116K  onsemi
mj11032g.pdf

MJ11032G
MJ11032G

MJ11028, MJ11030,MJ11032 (NPN)MJ11029, MJ11033 (PNP)High-CurrentComplementary Siliconhttp://onsemi.comPower TransistorsHigh-Current Complementary Silicon Power Transistors are for use50 AMPEREas output devices in complementary general purpose amplifierCOMPLEMENTARYapplications.DARLINGTON POWERFeaturesTRANSISTORS High DC Current Gain - hFE = 1000 (Min) @ IC = 25

 7.1. Size:207K  inchange semiconductor
mj11032.pdf

MJ11032G
MJ11032G

isc Silicon NPN Darlington Power Transistor MJ11032DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 120V(Min.)(BR)CEOHigh DC Current Gain-: h = 1000(Min.)@I = 25AFE C: h = 400(Min.)@I = 50AFE CComplement to the PNP MJ11033Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as output devices in com

 8.1. Size:116K  onsemi
mj11033g.pdf

MJ11032G
MJ11032G

MJ11028, MJ11030,MJ11032 (NPN)MJ11029, MJ11033 (PNP)High-CurrentComplementary Siliconhttp://onsemi.comPower TransistorsHigh-Current Complementary Silicon Power Transistors are for use50 AMPEREas output devices in complementary general purpose amplifierCOMPLEMENTARYapplications.DARLINGTON POWERFeaturesTRANSISTORS High DC Current Gain - hFE = 1000 (Min) @ IC = 25

 8.2. Size:207K  inchange semiconductor
mj11030.pdf

MJ11032G
MJ11032G

isc Silicon NPN Darlington Power Transistor MJ11030DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 90V(Min.)(BR)CEOHigh DC Current Gain-: h = 1000(Min.)@I = 25AFE C: h = 400(Min.)@I = 50AFE CComplement to the PNP MJ11031Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as output devices in comp

 8.3. Size:208K  inchange semiconductor
mj11031.pdf

MJ11032G
MJ11032G

isc Silicon PNP Darlington Power Transistor MJ11031DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -90V(Min.)(BR)CEOHigh DC Current Gain-: h = 1000(Min.)@I = -25AFE C: h = 400(Min.)@I = -50AFE CComplement to the NPN MJ11030Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as output devices in c

 8.4. Size:53K  inchange semiconductor
mj11033.pdf

MJ11032G
MJ11032G

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor MJ11033 DESCRIPTION Collector-Emitter Breakdown Voltage : V(BR)CEO= -120V(Min.) High DC Current Gain- : hFE= 1000(Min.)@IC= -25A : hFE= 400(Min.)@IC= -50A Complement to Type MJ11032 APPLICATIONS Designed for use as output devices in complementary general purpose amplifie

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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