MJ11033G datasheet, аналоги, основные параметры

Наименование производителя: MJ11033G  📄📄 

Тип материала: Si

Полярность: PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 300 W

Макcимально допустимое напряжение коллектор-база (Ucb): 120 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 120 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 50 A

Предельная температура PN-перехода (Tj): 200 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 1000

Корпус транзистора: TO3

 Аналоги (замена) для MJ11033G

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MJ11033G даташит

 ..1. Size:116K  onsemi
 mj11033g.pdf pdf_icon

MJ11033G

MJ11028, MJ11030, MJ11032 (NPN) MJ11029, MJ11033 (PNP) High-Current Complementary Silicon http //onsemi.com Power Transistors High-Current Complementary Silicon Power Transistors are for use 50 AMPERE as output devices in complementary general purpose amplifier COMPLEMENTARY applications. DARLINGTON POWER Features TRANSISTORS High DC Current Gain - hFE = 1000 (Min) @ IC = 25

 7.1. Size:53K  inchange semiconductor
 mj11033.pdf pdf_icon

MJ11033G

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor MJ11033 DESCRIPTION Collector-Emitter Breakdown Voltage V(BR)CEO= -120V(Min.) High DC Current Gain- hFE= 1000(Min.)@IC= -25A hFE= 400(Min.)@IC= -50A Complement to Type MJ11032 APPLICATIONS Designed for use as output devices in complementary general purpose amplifie

 8.1. Size:116K  onsemi
 mj11032g.pdf pdf_icon

MJ11033G

MJ11028, MJ11030, MJ11032 (NPN) MJ11029, MJ11033 (PNP) High-Current Complementary Silicon http //onsemi.com Power Transistors High-Current Complementary Silicon Power Transistors are for use 50 AMPERE as output devices in complementary general purpose amplifier COMPLEMENTARY applications. DARLINGTON POWER Features TRANSISTORS High DC Current Gain - hFE = 1000 (Min) @ IC = 25

 8.2. Size:207K  inchange semiconductor
 mj11030.pdf pdf_icon

MJ11033G

isc Silicon NPN Darlington Power Transistor MJ11030 DESCRIPTION Collector-Emitter Breakdown Voltage V = 90V(Min.) (BR)CEO High DC Current Gain- h = 1000(Min.)@I = 25A FE C h = 400(Min.)@I = 50A FE C Complement to the PNP MJ11031 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as output devices in comp

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