All Transistors. MJ11033G Datasheet

 

MJ11033G Datasheet and Replacement


   Type Designator: MJ11033G
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 300 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 50 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO3
 

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MJ11033G Datasheet (PDF)

 ..1. Size:116K  onsemi
mj11033g.pdf pdf_icon

MJ11033G

MJ11028, MJ11030,MJ11032 (NPN)MJ11029, MJ11033 (PNP)High-CurrentComplementary Siliconhttp://onsemi.comPower TransistorsHigh-Current Complementary Silicon Power Transistors are for use50 AMPEREas output devices in complementary general purpose amplifierCOMPLEMENTARYapplications.DARLINGTON POWERFeaturesTRANSISTORS High DC Current Gain - hFE = 1000 (Min) @ IC = 25

 7.1. Size:53K  inchange semiconductor
mj11033.pdf pdf_icon

MJ11033G

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor MJ11033 DESCRIPTION Collector-Emitter Breakdown Voltage : V(BR)CEO= -120V(Min.) High DC Current Gain- : hFE= 1000(Min.)@IC= -25A : hFE= 400(Min.)@IC= -50A Complement to Type MJ11032 APPLICATIONS Designed for use as output devices in complementary general purpose amplifie

 8.1. Size:116K  onsemi
mj11032g.pdf pdf_icon

MJ11033G

MJ11028, MJ11030,MJ11032 (NPN)MJ11029, MJ11033 (PNP)High-CurrentComplementary Siliconhttp://onsemi.comPower TransistorsHigh-Current Complementary Silicon Power Transistors are for use50 AMPEREas output devices in complementary general purpose amplifierCOMPLEMENTARYapplications.DARLINGTON POWERFeaturesTRANSISTORS High DC Current Gain - hFE = 1000 (Min) @ IC = 25

 8.2. Size:207K  inchange semiconductor
mj11030.pdf pdf_icon

MJ11033G

isc Silicon NPN Darlington Power Transistor MJ11030DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 90V(Min.)(BR)CEOHigh DC Current Gain-: h = 1000(Min.)@I = 25AFE C: h = 400(Min.)@I = 50AFE CComplement to the PNP MJ11031Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as output devices in comp

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: BDX64C

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