Справочник транзисторов. MJD350T4G

 

Биполярный транзистор MJD350T4G - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: MJD350T4G
   Маркировка: J350G
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 15 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 300 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 300 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
   Макcимальный постоянный ток коллектора (Ic): 0.5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 10 MHz
   Статический коэффициент передачи тока (hfe): 30
   Корпус транзистора: TO-252

 Аналоги (замена) для MJD350T4G

 

 

MJD350T4G Datasheet (PDF)

 ..1. Size:172K  onsemi
mjd350t4g.pdf

MJD350T4G
MJD350T4G

MJD340,NJVMJD340T4G (NPN),MJD350,NJVMJD350T4G (PNP)High Voltage Powerhttp://onsemi.comTransistorsDPAK For Surface Mount ApplicationsSILICONDesigned for line operated audio output amplifier, switchmodePOWER TRANSISTORSpower supply drivers and other switching applications.0.5 AMPEREFeatures300 VOLTS, 15 WATTS Lead Formed for Surface Mount Applications in Plastic S

 8.1. Size:194K  motorola
mjd340re mjd350.pdf

MJD350T4G
MJD350T4G

Order this documentMOTOROLAby MJD340/DSEMICONDUCTOR TECHNICAL DATANPN*MJD340High Voltage Power Transistors PNPMJD350*DPAK For Surface Mount ApplicationsDesigned for line operated audio output amplifier, switchmode power supply drivers*Motorola Preferred Deviceand other switching applications. Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)

 8.2. Size:503K  st
mjd340 mjd350.pdf

MJD350T4G
MJD350T4G

MJD340MJD350COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERREDSALESTYPES COMPLEMENTARY PNP - NPN DEVICES MEDIUM VOLTAGE CAPABILITY SURFACE-MOUNTING TO-252 (DPAK)POWER PACKAGE IN TAPE & REEL(SUFFIX "T4")3 ELECTRICAL SIMILAR TO MJE340 ANDMJE3501APPLICATIONS SOLENOID/RELAY DRIVERS DPAK GENERAL PURPOSE SWITCHING ANDTO-252AMPLIFIER (S

 8.3. Size:37K  fairchild semi
mjd350.pdf

MJD350T4G
MJD350T4G

MJD350High Voltage Power Transistors D-PAK for Surface Mount Applications Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, - I Suffix)D-PAK I-PAK111.Base 2.Collector 3.EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage - 300 V VCEO

 8.4. Size:667K  diodes
mjd350.pdf

MJD350T4G
MJD350T4G

MJD350 300V PNP HIGH VOLTAGE TRANSISTOR IN TO252 (DPAK) Features Mechanical Data BVCEO > -300V Case: TO252 (DPAK) Case Material: Molded Plastic, "Green" Molding Compound IC = -0.5A Continuous Collector Current UL Flammability Classification Rating 94V-0 ICM = -0.75A Peak Pulse Current Moisture Sensitivity: Level 1 per J-STD-020 Ideal for Power Switc

 8.5. Size:177K  onsemi
mjd340 mjd350.pdf

MJD350T4G
MJD350T4G

MJD340 (NPN),MJD350 (PNP)High Voltage PowerTransistorsDPAK for Surface Mount Applicationswww.onsemi.comDesigned for line operated audio output amplifier, switchmodepower supply drivers and other switching applications.Features SILICON Lead Formed for Surface Mount Applications in Plastic Sleeves POWER TRANSISTORS(No Suffix)0.5 AMPERE Electrically Similar to Popular

 8.6. Size:172K  onsemi
njvmjd340 njvmjd350.pdf

MJD350T4G
MJD350T4G

MJD340,NJVMJD340T4G (NPN),MJD350,NJVMJD350T4G (PNP)High Voltage Powerhttp://onsemi.comTransistorsDPAK For Surface Mount ApplicationsSILICONDesigned for line operated audio output amplifier, switchmodePOWER TRANSISTORSpower supply drivers and other switching applications.0.5 AMPEREFeatures300 VOLTS, 15 WATTS Lead Formed for Surface Mount Applications in Plastic S

 8.7. Size:809K  blue-rocket-elect
mjd350.pdf

MJD350T4G
MJD350T4G

MJD350 Rev.E May.-2016 DATA SHEET / Descriptions TO-252 PNP Silicon PNP transistor in a TO-252 Plastic Package. / Features High voltage. / Applications High voltage general purpose applications. / Equivalent Circuit / Pinning 4 1 2

 8.8. Size:205K  inchange semiconductor
mjd350.pdf

MJD350T4G
MJD350T4G

isc Silicon PNP Power Transistor MJD350DESCRIPTIONCollectorEmitter Sustaining Voltage-: V =CEO(SUS) -300 V(Min)Low Collector Saturation Voltage-: V = -1.0V(Max.)@ I = -50mACE(sat) CDPAK for Surface Mount ApplicationsComplement to Type MJD340Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for line oper

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