MJD350T4G Datasheet and Replacement
Type Designator: MJD350T4G
SMD Transistor Code: J350G
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO-252
MJD350T4G Transistor Equivalent Substitute - Cross-Reference Search
MJD350T4G Datasheet (PDF)
mjd350t4g.pdf
MJD340, NJVMJD340T4G (NPN), MJD350, NJVMJD350T4G (PNP) High Voltage Power http //onsemi.com Transistors DPAK For Surface Mount Applications SILICON Designed for line operated audio output amplifier, switchmode POWER TRANSISTORS power supply drivers and other switching applications. 0.5 AMPERE Features 300 VOLTS, 15 WATTS Lead Formed for Surface Mount Applications in Plastic S... See More ⇒
mjd340re mjd350.pdf
Order this document MOTOROLA by MJD340/D SEMICONDUCTOR TECHNICAL DATA NPN * MJD340 High Voltage Power Transistors PNP MJD350* DPAK For Surface Mount Applications Designed for line operated audio output amplifier, switchmode power supply drivers *Motorola Preferred Device and other switching applications. Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) ... See More ⇒
mjd340 mjd350.pdf
MJD340 MJD350 COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MEDIUM VOLTAGE CAPABILITY SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") 3 ELECTRICAL SIMILAR TO MJE340 AND MJE350 1 APPLICATIONS SOLENOID/RELAY DRIVERS DPAK GENERAL PURPOSE SWITCHING AND TO-252 AMPLIFIER (S... See More ⇒
mjd350.pdf
MJD350 High Voltage Power Transistors D-PAK for Surface Mount Applications Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, - I Suffix) D-PAK I-PAK 11 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 300 V VCEO ... See More ⇒
Datasheet: MJD32CG , MJD32CQ , MJD32CRLG , MJD32CT4-A , MJD32CT4G , MJD340G , MJD340RLG , MJD340T4G , 2SD669A , MJD360T4-A , MJD361T4-A , MJD41CRLG , MJD41CT4G , MJD42C1G , MJD42CG , MJD42CRLG , MJD42CT4G .
History: 2SC3753 | 2SC3900 | 2SC3813 | 2SC3822 | 2SC3781E | 2SC3781 | 2SC3841
Keywords - MJD350T4G transistor datasheet
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History: 2SC3753 | 2SC3900 | 2SC3813 | 2SC3822 | 2SC3781E | 2SC3781 | 2SC3841
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