MMBT2222AWT1G datasheet, аналоги, основные параметры

Наименование производителя: MMBT2222AWT1G  📄📄 

Маркировка: P1

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.15 W

Макcимально допустимое напряжение коллектор-база (Ucb): 75 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V

Макcимальный постоянный ток коллектора (Ic): 0.6 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 300 MHz

Ёмкость коллекторного перехода (Cc): 8 pf

Статический коэффициент передачи тока (hFE): 100

Корпус транзистора: SOT-323

 Аналоги (замена) для MMBT2222AWT1G

- подборⓘ биполярного транзистора по параметрам

 

MMBT2222AWT1G даташит

 ..1. Size:125K  onsemi
mmbt2222awt1g smmbt2222awt1g.pdfpdf_icon

MMBT2222AWT1G

MMBT2222AWT1G, SMMBT2222AWT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier http //onsemi.com applications. They are housed in the SOT-323/SC-70 package which is designed for low power surface mount applications. Features AEC-Q101 Qualified and PPAP Capable SC-70 S Prefix for Automotive and Other Applications Requiring Uni

 ..2. Size:129K  onsemi
mmbt2222awt1g.pdfpdf_icon

MMBT2222AWT1G

MMBT2222AWT1G, SMMBT2222AWT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier http //onsemi.com applications. They are housed in the SOT-323/SC-70 package which is designed for low power surface mount applications. Features AEC-Q101 Qualified and PPAP Capable SC-70 S Prefix for Automotive and Other Applications Requiring Uni

 2.1. Size:72K  motorola
mmbt2222awt1rev0.pdfpdf_icon

MMBT2222AWT1G

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT2222AWT1/D Preliminary Information MMBT2222AWT1 General Purpose Transistor Motorola Preferred Device NPN Silicon These transistors are designed for general purpose amplifier applica- tions. They are housed in the SOT 323/SC 70 package which is designed for low power surface mount applications. COLLECTOR 3 3 1 1

 2.2. Size:121K  onsemi
mmbt2222awt1-d.pdfpdf_icon

MMBT2222AWT1G

MMBT2222AWT1 General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-323/SC-70 package which is designed for low power surface mount applications. http //onsemi.com Features COLLECTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3 Compliant 1 MAXIMUM RATINGS BASE Rating Symbo

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