All Transistors. MMBT2222AWT1G Datasheet

 

MMBT2222AWT1G Datasheet, Equivalent, Cross Reference Search


   Type Designator: MMBT2222AWT1G
   SMD Transistor Code: P1
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 75 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 300 MHz
   Collector Capacitance (Cc): 8 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT-323

 MMBT2222AWT1G Transistor Equivalent Substitute - Cross-Reference Search

   

MMBT2222AWT1G Datasheet (PDF)

 ..1. Size:125K  onsemi
mmbt2222awt1g smmbt2222awt1g.pdf

MMBT2222AWT1G
MMBT2222AWT1G

MMBT2222AWT1G,SMMBT2222AWT1GGeneral Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierhttp://onsemi.comapplications. They are housed in the SOT-323/SC-70 package whichis designed for low power surface mount applications.Features AEC-Q101 Qualified and PPAP CapableSC-70 S Prefix for Automotive and Other Applications Requiring Uni

 ..2. Size:129K  onsemi
mmbt2222awt1g.pdf

MMBT2222AWT1G
MMBT2222AWT1G

MMBT2222AWT1G,SMMBT2222AWT1GGeneral Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierhttp://onsemi.comapplications. They are housed in the SOT-323/SC-70 package whichis designed for low power surface mount applications.Features AEC-Q101 Qualified and PPAP CapableSC-70 S Prefix for Automotive and Other Applications Requiring Uni

 2.1. Size:72K  motorola
mmbt2222awt1rev0.pdf

MMBT2222AWT1G
MMBT2222AWT1G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT2222AWT1/DPreliminary InformationMMBT2222AWT1General Purpose TransistorMotorola Preferred DeviceNPN SiliconThese transistors are designed for general purpose amplifier applica-tions. They are housed in the SOT323/SC70 package which isdesigned for low power surface mount applications.COLLECTOR3311

 2.2. Size:121K  onsemi
mmbt2222awt1-d.pdf

MMBT2222AWT1G
MMBT2222AWT1G

MMBT2222AWT1General Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT-323/SC-70 package whichis designed for low power surface mount applications.http://onsemi.comFeaturesCOLLECTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS3Compliant1MAXIMUM RATINGSBASERating Symbo

 2.3. Size:290K  willas
mmbt2222awt1.pdf

MMBT2222AWT1G
MMBT2222AWT1G

FM120-M WILLASTHRUMMBT2222AWT1FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VGeneral Purpose TransistorsSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order toNPN Silic

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: MMBT3331 | 2SB225 | 2SC3921 | 2SC3905

 

 
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