MMBT5210 - Даташиты. Аналоги. Основные параметры

2N5210/MMBT5210 NPN General Purpose Amplifier C This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1 A to 50 mA. E C TO-92 BE B SOT-23 Mark 3M Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 50 V VCBO Collector-Base Voltage 50 V VEBO Emitter-B

2N5210/MMBT5210 NPN General Purpose Amplifier C This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1 A to 50 mA. E C TO-92 BE B SOT-23 Mark 3M Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 50 V VCBO Collector-Base Voltage 50 V VEBO Emitter-B

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT5088LT1/D MMBT5088LT1 Low Noise Transistors * MMBT5089LT1 COLLECTOR NPN Silicon 3 *Motorola Preferred Device 1 BASE 2 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol 5088LT1 5089LT1 Unit 2 Collector Emitter Voltage VCEO 30 25 Vdc CASE 318 08, STYLE 6 Collector Base Voltage VCBO 35 30 Vdc SOT 23 (TO 236A

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT5550LT1/D MMBT5550LT1 High Voltage Transistors * MMBT5551LT1 COLLECTOR NPN Silicon 3 *Motorola Preferred Device 1 BASE 2 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 Collector Emitter Voltage VCEO 140 Vdc Collector Base Voltage VCBO 160 Vdc CASE 318 08, STYLE 6 SOT 23 (TO 236AB) Emitter

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT5087LT1/D Low Noise Transistor COLLECTOR MMBT5087LT1 3 PNP Silicon Motorola Preferred Device 1 BASE 2 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 Collector Emitter Voltage VCEO 50 Vdc 2 Collector Base Voltage VCBO 50 Vdc CASE 318 08, STYLE 6 Emitter Base Voltage VEBO 3.0 Vdc SOT 23 (

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT5401LT1/D High Voltage Transistor MMBT5401LT1 COLLECTOR PNP Silicon 3 Motorola Preferred Device 1 BASE 2 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 Collector Emitter Voltage VCEO 150 Vdc CASE 318 08, STYLE 6 Collector Base Voltage VCBO 160 Vdc SOT 23 (TO 236AB) Emitter Base Volt

2N5771 MMBT5771 C E C TO-92 B B SOT-23 E Mark 3R PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage

Discrete POWER & Signal Technologies 2N5962 MMBT5962 C E C TO-92 B B E SOT-23 Mark 117 NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general purpose amplifiers requiring collector currents to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value U

2N5401 MMBT5401 C E C TO-92 B B SOT-23 E Mark 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 150 V VCBO Collector-Base Voltage 160 V VEBO Emitter-Base Voltage 5.0 V I

June 2009 2N5551 / MMBT5551 NPN General Purpose Amplifier Features This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Suffix -C means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base) Suffix -Y means hFE 180 240 in 2N5551 (Test condition IC = 10mA, VCE = 5.0V) 2N5551 MMBT5551 3 2 TO-92 SOT-23

MPS5179 MMBT5179 PN5179 C E C TO-92 C TO-92 B B E SOT-23 E B Mark 3C NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 A to 30 mA range in common emitter or common base mode of operation, and in low frequency drift, high ouput UHF oscillators. Sourced from Process 40. Absolute Maximum Ratings* TA = 25 C unless o

February 2008 MMBT5770 NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from process 43. 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collect

2N5086/2N5087/MMBT5087 PNP General Purpose Amplifier 3 This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50mA. 2 SOT-23 TO-92 1 Mark 2Q 1 1. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collect

Discrete POWER & Signal Technologies 2N5962 MMBT5962 C E C TO-92 B B E SOT-23 Mark 117 NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general purpose amplifiers requiring collector currents to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value U

August 2005 MMBT5550 NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. 3 2 SOT-23 1 Marking 1F 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 140 V VCBO Collector-Base Voltage 160 V VEBO

MMBT5401 PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for C applications requiring high voltage. E B SOT-23 Mark 2L PNP Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage -150 V VCBO Collector-Base Voltage -160 V VEBO Emitter-Bas

2N5088 MMBT5088 2N5089 MMBT5089 C E C TO-92 B B SOT-23 E Mark 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1 A to 50 mA. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 2N5088 30 V 2N5089 25 V VCBO

MMBT5551 160V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > 160V Case SOT-23 Case Material Molded Plastic, Green molding compound. Ideal for Low Power Amplification and Switching UL Flammability Classification Rating 94V-0 Complementary PNP Type Available (MMBT5401) Moisture Sensitivity Level 1 per J-STD-020 Totally

MMBT5401 150V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case SOT23 Complementary NPN Type - MMBT5551 Case Material Molded Plastic, Green Molding Compound Ideal for Low Power Amplification and Switching UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes

MCC Micro Commercial Components TM MMBT5401 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features PNP Plastic Collector Current ICM=0.6A Encapsulate Collector-Base Voltage V(BR)CBO=160V Operating And Storage Temperatures 55OC to 150OC Transistor Capable of 0.3Watts of Power Dissipation

MCC MMBT5343-O TM Micro Commercial Components 20736 Marilla Street Chatsworth MMBT5343-Y Micro Commercial Components CA 91311 MMBT5343-G Phone (818) 701-4933 Fax (818) 701-4939 MMBT5343-L Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN Silicon Epoxy meets UL 94 V-0 flammability rating Moisure Sensitiv

MCC Micro Commercial Components TM MMBT5551 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features NPN Plastic Halogen free available upon request by adding suffix "-HF" Collector Current ICM=0.6A Encapsulate Collector-Base Voltage V(BR)CBO=180V Operating And Storage Temperatures 55OC to 150OC

MCC Micro Commercial Components TM MMBT5401 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features PNP Plastic Halogen free available upon request by adding suffix "-HF" Collector Current ICM=0.6A Encapsulate Collector-Base Voltage V(BR)CBO=160V Operating And Storage Temperatures 55OC to 150OC

MMBT5088L, MMBT5089L Low Noise Transistors NPN Silicon Features S and NSV Prefix for Automotive and Other Applications Requiring http //onsemi.com Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* SOT-23 (TO-236) CASE 318 MAXIMUM RATINGS STYLE 6 Rating Symbol Value Unit

MMBT5088LT1G, SMMBT5088LT1G, MMBT5089LT1G, SMMBT5089LT1G Low Noise Transistors http //onsemi.com NPN Silicon Features AEC-Q101 Qualified and PPAP Capable SOT-23 (TO-236) S Prefix for Automotive and Other Applications Requiring Unique CASE 318 Site and Control Change Requirements STYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant

MMBT5401L, SMMBT5401L, NSVMMBT5401L High Voltage Transistor PNP Silicon http //onsemi.com Features S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS SOT-23 (TO-236) Compliant CASE 318 STYLE 6 MAXIMUM RATINGS COLLECTO

MMBT5550L, MMBT5551L High Voltage Transistors NPN Silicon Features S Prefix for Automotive and Other Applications Requiring Unique www.onsemi.com Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit 2 EMITTER Collector

MMBT5551M3 NPN High Voltage Transistor The MMBT5551M3 device is a spin-off of our popular SOT-23 three-leaded device. It is designed for general purpose high voltage applications and is housed in the SOT-723 surface mount package. www.onsemi.com This device is ideal for low-power surface mount applications where board space is at a premium. COLLECTOR Features 3 Reduces Board Spa

MMBT5401W High Voltage Transistor PNP Silicon Features NSV Prefix for Automotive and Other Applications Requiring www.onsemi.com Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit 2 EMITTER Collector-Emitter Vo

MMBT5088LT1G, MMBT5089LT1G Low Noise Transistors NPN Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 1 MAXIMUM RATINGS BASE Rating Symbol Value Unit 2 Collector-Emitter Voltage VCEO Vdc EMITTER MMBT5088 30 MMBT5089 25 Collector-Base Voltage VCBO Vdc 3 SOT-23 (TO-236) MMBT5088 35 MMBT5089 30 CASE 31

March March 20188 2N5551 / MMBT5551 NPN General-Purpose Amplifier Description This device is designed for general-purpose high-voltage amplifiers and gas discharge display drivers. 2N5551 MMBT5551 3 2 TO-92 SOT-23 1 Marking 3S 1. Base 2. Emitter 3. Collector Ordering Information(1) Part Number Top Mark Package Packing Method 2N5551TA 5551 TO-92 3L Ammo 2N5551TFR 5551 TO-92 3L

MMBT589LT1G, NSVMMBT589LT1G High Current Surface Mount PNP Silicon Switching Transistor for Load http //onsemi.com Management in Portable Applications 30 VOLTS, 2.0 AMPS PNP TRANSISTORS Features AEC-Q101 Qualified and PPAP Capable NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT-23 (TO-236) These Devices are P

MMBT5401M3 High Voltage Transistor PNP Silicon The MMBT5401M3 device is a spin-off of our popular SOT-23 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-723 surface mount package. www.onsemi.com This device is ideal for low-power surface mount applications where board space is at a premium. Features SOT-723 NSV Prefix for Au

MMBT5087L Low Noise Transistor PNP Silicon Features NSV Prefix for Automotive and Other Applications Requiring www.onsemi.com Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER Collector-Emitter Volt

MMBT5550LT1G, MMBT5551LT1G High Voltage Transistors NPN Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 MAXIMUM RATINGS 1 BASE Rating Symbol Value Unit Collector-Emitter Voltage VCEO Vdc 2 MMBT5550 140 EMITTER MMBT5551 160 Collector-Base Voltage VCBO Vdc MARKING MMBT5550 160 3 DIAGRAM MMBT5551 18

MMBT589LT1G, NSVMMBT589LT1G High Current Surface Mount PNP Silicon Switching Transistor for Load www.onsemi.com Management in Portable Applications 30 VOLTS, 2.0 AMPS PNP TRANSISTORS Features NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BF

MMBT589LT1G, NSVMMBT589LT1G High Current Surface Mount PNP Silicon Switching Transistor for Load http //onsemi.com Management in Portable Applications 30 VOLTS, 2.0 AMPS PNP TRANSISTORS Features AEC-Q101 Qualified and PPAP Capable NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT-23 (TO-236) These Devices are P

MMBT5401LT1G, SMMBT5401LT1G, MMBT5401LT3G High Voltage Transistor PNP Silicon http //onsemi.com Features AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT-23 (TO-236) CASE 318 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS STYLE 6 Compliant* COLLECTOR MAXIMUM RAT

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MMBT5401L, SMMBT5401L, NSVMMBT5401L High Voltage Transistor PNP Silicon www.onsemi.com Features S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS SOT-23 (TO-236) Compliant CASE 318 STYLE 6 MAXIMUM RATINGS COLLECTOR

MMBT5401W High Voltage Transistor PNP Silicon Features NSV Prefix for Automotive and Other Applications Requiring www.onsemi.com Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit 2 EMITTER Collector-Emitter Vo

MMBT589LT1G High Current Surface Mount PNP Silicon Switching Transistor for Load Management in http //onsemi.com Portable Applications 30 VOLTS, 2.0 AMPS Features PNP TRANSISTORS These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 MAXIMUM RATINGS (TA = 25 C) 1 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO -30 Vdc Collector-

MMBT5088L, MMBT5089L Low Noise Transistors NPN Silicon Features S and NSV Prefix for Automotive and Other Applications Requiring www.onsemi.com Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant SOT-23 (TO-236) CASE 318 MAXIMUM RATINGS STYLE 6 Rating Symbol Value Unit COL

MMBT5401W High Voltage Transistor PNP Silicon Features NSV Prefix for Automotive and Other Applications Requiring www.onsemi.com Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit 2 EMITTER Collector-Emitter Vo

MMBT5087LT1G Low Noise Transistor PNP Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO -50 Vdc Collector-Base Voltage VCBO -50 Vdc 2 EMITTER Emitter-Base Voltage VEBO -3.0 Vdc Collector Current - Continuous IC -50 mAdc THERMA

MMBT5088LT1G, SMMBT5088LT1G, MMBT5089LT1G, SMMBT5089LT1G Low Noise Transistors http //onsemi.com NPN Silicon Features AEC-Q101 Qualified and PPAP Capable SOT-23 (TO-236) S Prefix for Automotive and Other Applications Requiring Unique CASE 318 Site and Control Change Requirements STYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant

MMBT5401LT1G, SMMBT5401LT1G, MMBT5401LT3G High Voltage Transistor PNP Silicon http //onsemi.com Features AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT-23 (TO-236) CASE 318 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS STYLE 6 Compliant COLLECTOR MAXIMUM RATI

MMBT5550L, MMBT5551L, SMMBT5551L High Voltage Transistors NPN Silicon http //onsemi.com Features AEC-Q101 Qualified and PPAP Capable COLLECTOR S Prefix for Automotive and Other Applications Requiring Unique 3 Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 BASE Compliant 2 MAXIMUM RATINGS EMITTER Rating Symbol Va

MMBT5087L Low Noise Transistor PNP Silicon Features NSV Prefix for Automotive and Other Applications Requiring http //onsemi.com Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER Collector-Emitter V

MMBT5401LT1G High Voltage Transistor PNP Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 Collector-Emitter Voltage VCEO -150 Vdc BASE Collector-Base Voltage VCBO -160 Vdc 2 Emitter-Base Voltage VEBO -5.0 Vdc EMITTER Collector Current - Continuous IC -500 mAdc S

MMBT5087LT1G Low Noise Transistor PNP Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO -50 Vdc Collector-Base Voltage VCBO -50 Vdc 2 EMITTER Emitter-Base Voltage VEBO -3.0 Vdc Collector Current - Continuous IC -50 mAdc THERMA

MMBT5550L, MMBT5551L, SMMBT5551L High Voltage Transistors NPN Silicon http //onsemi.com Features AEC-Q101 Qualified and PPAP Capable COLLECTOR S Prefix for Automotive and Other Applications Requiring Unique 3 Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 BASE Compliant 2 MAXIMUM RATINGS EMITTER Rating Symbol Va

UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR 3 DESCRIPTION The UTC MMBT5551 is a high voltage fast-switching NPN 1 power transistor. It is characterized with high breakdown voltage, 2 high current gain and high switching speed. SOT-23 (JEDEC TO-236) FEATURES * High Collector-Emitter Voltage VCEO=160V * High c

UNISONIC TECHNOLOGIES CO., LTD MMBT5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage VCEO=-150V *High Current Gain ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3 MMBT5401G-x-AE3-R SOT-23 E B C Tape Reel Note Pin Assignment E Emitter B Base C Collector MARKING www.unisonic.com.t

MMBT5551W NPN Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product SOT-323 A suffix of -C specifies halogen & lead-free FEATURE A L Ideal for Medium Power Amplification and Switching 3 3 Also Available in Lead Free Version Top View C B Complementary to MMBT5401W 1 1 2 2 K E D Collector H J F G 3 MARKING K4N Mi

MMBT591 PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES Dim Min Max COLLECTOR 3 A 2.800 3.040 3 B 1.200 1.400 Power dissipation 1 1 C 0.890 1.110 2 PCM 0.5 W BASE D 0.370 0.500 Collector Current G 1.780 2.040 ICM -1 A A 2 H 0.013 0.100 L EMITTER Col

MMBT5401W PNP Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product SOT-323 A suffix of -C specifies halogen & lead-free FEATURE A L Ideal for Medium Power Amplification and Switching 3 3 Also Available in Lead Free Version Top View C B Complementary to MMBT5551W 1 1 2 2 K E Collector 3 D H J F G MARKING K4M 1

MMBT5551 NPN Silicon Elek t ronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 Dim Min Max A L A 2.800 3.040 B 1.200 1.400 3 FEATURES C 0.890 1.110 S Top View B 1 2 D 0.370 0.500 G 1.780 2.040 Power dissipation V G H 0.013 0.100 o PCM 0.3 W (Tamb=25 C) J 0.085 0.177 C K 0.450 0.600 Collect

MMBT589 PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES SOT-23 A 2 Dim Min Max L Emitter 3 A 2.800 3.040 3 B 1.200 1.400 Top View S B 1 12 1 Base C 0.890 1.110 2 D 0.370 0.500 V G G 1.780 2.040 Collector 3 H 0.013 0.100 C J 0.085 0.177 H J D K K 0.450 0

MMBT5401 PNP Silicon General PurposeTransistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES A L Ideal for medium power amplification and switching 3 3 Top View C B 1 1 2 MARKING 2 K E 2L D H J F G ABSOLUTE MAXIMUM RATINGS Millimeter Millimeter REF. REF. Min. Max. Min. Max. Parameter Symb

MMBT593 PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Collector A L 3 Medium Power Transistor 3 3 Top View C B 1 1 1 2 Base MARKING 2 K E 593 2 D Emitter H J F G ABSOLUTE MAXIMUM RATINGS Millimeter Millimeter REF. REF. Min. Max. Min. Max. Paramet

www.jscj-elec.com AD-MMBT5551 series JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-MMBT5551 Series Plastic-Encapsulated Transistor AD-MMBT5551 series Transistor (NPN) FEATURES Complementary to AD-MMBT5401 series Ideal for medium power amplification and switching AEC-Q101 qualified MARKING G1 = Device code G1 EQUIVALENT CIRCUIT 3 1 2 Versio

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors MMBT5551 TRANSISTOR (NPN) SOT 23 FEATURES Complementary to MMBT5401 Ideal for Medium Power Amplification and Switching 1. BASE MARKING G1 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors MMBT5550 TRANSISTOR (NPN) SOT 23 FEATURES High Voltage Transistor MARKING M1F MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage 160 V CBO 3. COLLECTOR V Collector-Emitter Voltage 140 V CEO V

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT589 TRANSISTOR (PNP) FEATURES High current surface mount PNP silicon switching transistor for 1. BASE Load management in portable applications 2. EMITTER 3. COLLECTOR MARKING 589 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VC

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT5401 TRANSISTOR (PNP) SOT 23 FEATURES Complementary to MMBT5551 Ideal for Medium Power Amplification and Switching 1. BASE MARKING 2L 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage -

www.jscj-elec.com AD-MMBT5401 series JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-MMBT5401 series Plastic-Encapsulated Transistor AD-MMBT5401 series Transistor (PNP) FEATURES Complementary to AD-MMBT5551 series For medium power amplification and switching AEC-Q101 qualified MARKING 2L = Device code 2L Version 1.0 1 / 6 2021-07-01 www.jscj-elec

Zowie Technology Corporation High Voltage Transistors Lead free product Halogen-free type FEATURE We declare that the material of product compliance with RoHS requirements. 3 COLLECTOR 3 MMBT5550GH 1 1 BASE MMBT5551GH 2 2 SOT-23 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 140 Vdc Collector Base Voltage V CBO 160 Vdc Emitter B

Zowie Technology Corporation High Voltage Transistor Lead free product Halogen-free type FEATURE We declare that the material of product compliance with RoHS requirements. MMBT5401GH 3 1 2 SOT-23 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V 150 Vdc CEO 3 COLLECTOR Collector Base Voltage V CBO 160 Vdc Emitter Base Voltage V EBO 5.0

MMBT5551 TRANSISTOR(NPN) SOT 23 FEATURES Complementary to MMBT5401 Ideal for Medium Power Amplification and Switching 1. BASE MARKING G1 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current 6

MMBT5550 TRANSISTOR(NPN) SOT 23 FEATURES High Voltage Transistor MARKING M1F MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage 160 V CBO 3. COLLECTOR V Collector-Emitter Voltage 140 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current 600 mA C PC Collector Power Dissipation 225 mW

MMBT58 9 TRANSISTOR(PNP) SOT-23 FEATURES High current surface mount PNP silicon switching transistor for Load management in portable applications 1. BASE 2. EMITTER MARKING 589 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5

MMBT5401 TRANSISTOR(PNP) SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR Complementary to MMBT5551 Ideal for medium power amplification and switching MARKING 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM5551 MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Emitter Voltage VCEO 160 Vdc -

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM5401 MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO -150 Vdc -

MMBT5551 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to MMBT5401 Ideal for medium power amplification and switching MARKING G1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Ba

MMBT5401 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to MMBT5551 Ideal for medium power amplification and switching MARKING 2L Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emit

MMBT589 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features High current surface mount PNP silicon switching transistor for Load management in portable applications MARKING 589 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitte

MMBT5401 High Voltage PNP Transistors COLLECTOR 3 3 1 1 BASE 2 2 SOT-23 EMITTER WEITRON http //www.weitron.com.tw MMBT5401 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain - 50 (IC=-1.0mAdc, VCE=-5.0Vdc) hFE - 60 240 (IC=-10mAdc, VCE=-5.0Vdc) 50 - (IC=-50mAdc, VCE=-5.0Vdc)

MMBT5088 MMBT5089 COLLECTOR Low Noise NPN Transistor 3 3 Surface Mount 1 1 2 BASE P b Lead(Pb)-Free 2 SOT-23 EMITTER Maximum Ratings Rating Symbol 5088LT1 5089LT1 Unit Collector-Emitter Voltage V 30 25 Vdc CE O Collector-B as e Voltage VCB O 35 30 Vdc E m itter-B as e Voltage VE B O 4.5 Vdc Collector Current-Continuous IC mAdc 50 Thermal Characteristics Characteristics

MMBT5550 MMBT5551 High Voltage NPN Transistors COLLECTOR 3 3 1 1 BASE 2 2 SOT-23 EMITTER MMBT5550 MMBT5551 V CEO 140 160 160 180 6.0 600 556 300 2.4 417 MMBT5550 = M1F ; MMBT5551 = G1 (TA=25 C unless otherwise noted) (3) MMBT5550 140 1.0 , MMBT5551 160 MMBT5550 160 -100 , 180 MMBT5551 6.0 10 , WEITRON http //www.weitron.com.tw MMBT5550 MMBT5551 ELECTRICAL

FM120-M MMBT5551DW1T1 WILLAS THRU DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low pr FEATUREofile surface mounted appli

FM120-M WILLAS MMBT5401LT1 THRU High Voltage Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H FEATURE Low profile surface mounted application in order to o

FM120-M WILLAS THRU MMBT5551WT1 FM1200-M 1.0A SURFACE MOUNT SCHOTTKY DUAL NPN SMALL SIGNAL SURFACE BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product MOUNT TRANSISTOR Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in

FM120-M WILLAS MMBT555xLT1 THRU High Voltage Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimize boa

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT5401LT1 TRANSISTOR (PNP) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR - Power dissipation 2. 4 PCM 0.3 W (Tamb=25 ) 1. 3 Collector current ICM -0.6 A Collector-base voltage V(BR)CBO -160 V Operating and storage junction temperature range Unit mm

Shenzhen Tuofeng Semiconductor Technology Co., Ltd. SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT5551LT1 TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation 2. 4 PCM 0.3 W (Tamb=25 ) 1. 3 Collector current ICM 0.6 A Collector-base voltage V(BR)CBO 180 V Operating and storage junction temperature range Unit mm TJ, T

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors MMBT5401 TRANSISTOR (PNP) FEATURES Complimentary to MMBT5551 MARKING 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-B

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors MMBT5551 TRANSISTOR (NPN) FEATURES Complimentary to MMBT5401 MARKING G1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-B

MMBT5401T(BR3CG5401T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features , MMBT5551T(BR3DG5551T) High voltage, complementary Pair with MMBT5551T(BR3DG5551T). / Applications General purpose high voltag

MMBT5551 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features , MMBT5401 High voltage, complementary pair with MMBT5401. / Applications General purpose high voltage amplifier. / Eq

MMBT5551T(BR3DG5551T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features , MMBT5401T(BR3CG5401T) High voltage, complementary pair with MMBT5401T(BR3CG5401T). / Applications General purpose high voltag

MMBT5401-HAF PNP Silicon Epitaxial Planar Transistor Features Halogen and Antimony Free(HAF), RoHS compliant 1. Base 2. Emitter 3. Collector TO-236 Plastic Package Applications For high voltage amplifier applications Absolute Maximum Ratings (T = 25 ) a Parameter Symbol Value Unit Collector Base Voltage -V 160 V CBO Collector Emitter Voltage -V 150 V CEO Emitt

MMBT5551 NPN Silicon Epitaxial Planar Transistors for high voltage amplifier applications. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 180 V Collector Emitter Voltage VCEO 160 V Emitter Base Voltage VEBO 6 V Collector Current IC 600 mA Power Dissipation Ptot 350 mW O Junction Temperature Tj 150 C O

MMBT5401 PNP Silicon Epitaxial Planar Transistor for high voltage amplifier applications TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 160 V Collector Emitter Voltage -VCEO 150 V Emitter Base Voltage -VEBO 5 V Collector Current Continuous -IC 600 mA Power Dissipation Ptot 350 mW O Junction Temperature Tj 1

SMD Type Transistors PNP Transistors MMBT5087 (KMBT5087) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=-100mA Collector Emitter Voltage VCEO=-50V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage

SMD Type Transistors SMD Type NPN Transistors (KMBT5551) MMBT5551 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features High Voltage Transistors Pb-Free Packages are Available 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 180 V Collector-emitter volt

SMD Type Transistors NPN Transistors MMBT5550 (KMBT5550) SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current Capability IC=0.6A Collector Emitter Voltage VCEO=140V 1 2 High Voltage Transistor +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit

SMD Type Transistors SMD Type PNP Transistors MMBT5401 (KMBT5401) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features High Voltage Transistors Pb-Free Packages are Available 1 2 +0.1 0.95-0.1 0.1+0.05 -0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -160 V Collector-emitter volta

SMD Type Transistors NPN Transistors MMBT5088 (KMBT5088) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=30V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage V

SMD Type Transistors NPN Transistors MMBT5089 (KMBT5089) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=25V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage V

MMBT5551 NPN HIGH VOLTAGE TRANSISTOR 160 Volts POWER 250 mWatts VOLTAGE FEATURES 0.120(3.04) 0.110(2.80) NPN Silicon, planar design Collector-emitter voltage VCE = 160V Collector current IC = 600mA Lead free in compliance with EU RoHS 2.0 0.056(1.40) Green molding compound as per IEC 61249 standard 0.047(1.20) 0.079(2.00) 0.008(0.20) MECHANICAL DATA 0.070(1.

MMBT5401 HIGH VOLTAGE TRANSISTOR PNP Silicon FEATURES Lead free in compliance with EU RoHS 2.0 0.120(3.04) Green molding compound as per IEC 61249 standard 0.110(2.80) MECHANICAL DATA 0.056(1.40) 0.047(1.20) Case SOT-23 plastic case. Terminals Solderable per MIL-STD-750,Method 2026 0.079(2.00) 0.008(0.20) 0.070(1.80) 0.003(0.08) Standard packaging 8mm ta

General Purpose Transistor MMBT5401-G (PNP) RoHS Device SOT-23 Features -Epitaxial planar die construction. 0.119(3.00) 0.110(2.80) -Complementary NPN type available (MMBT5551-G). 3 -Ideal for medium power amplification and switching. 0.056(1.40) 0.047(1.20) 1 2 Diagram 0.006(0.15) 0.079(2.00) Collector 0.002(0.05) 0.071(1.80) 3 0.041(1.05) 0.100(2.55) 0.035(0.90) 0.0

Product specification NPN General Purpose Transistor MMBT5551 FEATURES Pb Epitaxial planar die construction. Lead-free Complementary PNP type available (MMBT5401). Also available in lead free version. MSL 1 APPLICATIONS Ideal for medium power amplification and switching. SOT-23 ORDERING INFORMATION Type No. Marking Package Code MMBT5551 G

GSTMMBT5401 High Voltage PNP Transistors Product Description Features This device is designed as a general purpose Collector-Emitter Voltage -150V amplifier and switch. Collector-Base Voltage -160V Collector Current-Continuous -500mA Lead(Pb)-Free Packages & Pin Assignments GSTMMBT5401F(SOT-23) Pin Description 1 Base 2 Emitter 3 Collector Marking Information

MMBT5551 NPN General Purpose Transistor FEATURES Epitaxial planar die construction. Complementary PNP type available (MMBT5401). Also available in lead free version. APPLICATIONS Ideal for medium power amplification and switching SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value UNIT VCBO collector-base voltage 180 V VCEO collecto

MMBT5401 FEATURES FEATURES FEATURES FEATURES PNP High Voltage Transistor MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage V -150 Vdc CEO Collector-Base Voltage V -160 Vdc CBO Emitter-Base Voltage V -6.0 Vdc EBO Collector Current Continuous Ic -500 mAdc THERMAL CHARACTERISTICS THERMAL CHARACTERISTICS

R UMW UMW MMBT5401 SOT-23 Plastic-Encapsulate Transistors MMBT5401 TRANSISTOR (PNP) SOT 23 FEATURES Complementary to MMBT5551 Ideal for Medium Power Amplification and Switching 1. BASE MARKING 2L 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Vo

R UMW UMW MMBT5551 SOT-23 Plastic-Encapsulate Transistors MMBT5551 TRANSISTOR (NPN) SOT 23 FEATURES Complementary to MMBT5401 Ideal for Medium Power Amplification and Switching 1. BASE MARKING G1 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage

MMBT5551 SOT-23 Features (TO-236) For Switching and Amplifier Applications. Silicon Epitaxial Chip 1 Base 2. Emitter 3. Collector Absolute Maximum Ratings (T =25 oC, unless otherwise noted) A Parameter Symbol Value Unit Collector Base Voltage V 180 V CBO Collector Emitter Voltage V 160 V CEO Emitter Base Voltage V 6 V EBO Collector Current I 600 mA C Powe

MMBT5401 Features SOT-23 (TO-236) For Switching and Amplifier Applications. Silicon Epitaxial Chip 1 Base 2. Emitter 3. Collector oC, Absolute Maximum Ratings (T =25 unless otherwise A noted) Parameter Symbol Value Unit -V 160 V Collector Base Voltage CBO Collector Emitter Voltage -V 150 V CEO -V 6V Emitter Base Voltage EBO Collector Current -I 600 mA C P 350 mW Pow

MMBT5550 / MMBT5551 High Voltage Transistors NPN Silicon Package outline Features High collector-emitterbreakdien voltage. SOT-23 (BV = 140V 160V@I =1mA) CEO C This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Epitaxial planar die construction. Lead-free parts for green partner, exceeds environmental standards of

MMBT5551 Transistors SOT-23 Plastic-Encapsulate Transistors(NPN) RHOS SOT-23 Features Complementary to MMBT5401 Epitaxial planar die construction Power Dissipation of 300mW 1. BASE MARKING G1 2. EMITTER 3. COLLECTOR Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Parameters Symbol Value Unit Collector-Base Voltage VCBO

MMBT5401 Transistors SOT-23 Plastic-Encapsulate Transistors(PNP) RHOS SOT-23 Features Complementary to MMBT5551 Epitaxial planar die construction Power Dissipation of 300mW 1. BASE MARKING 2L 2. EMITTER 3. COLLECTOR Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Parameters Symbol Value Unit Collector-Base Voltage VCB

MMBT5551 High Voltage Transistors NPN Silicon FEATURES Complementary to MMBT5401 SOT-23 Ideal for Medium Power Amplification and Switching MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipatio

MMBT5401 TRANSISTOR (PNP) FEATURES SOT-23 Complementary to MMBT5551 Ideal for Medium Power Amplification and Switching MARKING 2L 3 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1 Symbol Parameter Value Unit 1. BASE VCBO Collector-Base Voltage -160 V 2. EMITTER VCEO Collector-Emitter Voltage -150 V 3. COLLECTOR VEBO Emitter-Base Voltage -5 V IC Collect

SOT-23 Plastic-Encapsulate Transistors Formosa MS MMBT5551 TRANSISTOR (NPN) FEATURES SOT-23 Complementary to MMBT5401 Ideal for medium power amplification and switching 1. BASE 2. EMITTER 3. COLLECTOR - MARKING G1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V

SOT-23 Plastic-Encapsulate Transistors Formosa MS MMBT5401 TRANSISTOR (PNP) FEATURES SOT-23 Complementary to MMBT5551 1. BASE Ideal for medium power amplification and switching 2. EMITTER 3. COLLECTOR - MARKING 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -15

MMBT5551 HD-ST0.44 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N ) Features SOT- 23 Complementary to MMBT5401 Ideal for Medium Power Amplification and Switching Marking G1 Symbol Parameter Value Unit VCBO Collector-Base Voltage 180 V V Collector-Emitter Voltage 160 V C CEO V Emitter-Base Voltage 6 V EBO I Collector Current 600 mA C P Coll

MMBT5401 HD-ST0.42 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( P NP ) Features SOT- 23 Complementary to MMBT5551 Ideal for Medium Power Amplification and Switching Marking 2L Symbol Parameter Value Unit VCBO Collector-Base Voltage -160 V V Collector-Emitter Voltage -150 V CEO C V Emitter-Base Voltage -5 V EBO I Collector Current -600 mA C

MMBT5551 NPN General Purpose Transistor FEATURES Epitaxial planar die construction. Complementary PNP type available (MMBT5401). Also available in lead free version. APPLICATIONS Ideal for medium power amplification and switching. SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value UNIT VCBO collector-base voltage 180 V VCEO collec

MMBT5401 PNP General Purpose Transistor FEATURES Epitaxial planar die construction. Complementary NPN type available (MMBT5551). Also available in lead free version. APPLICATIONS Ideal for medium power amplification and switching SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value UNIT V collector-base voltage -160 V CBO V

MMBT5551 TRANSISTOR(NPN) FEATURES Complementary to MMBT5401 Ideal for Medium Power Amplification and Switching SOT-23 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipation 300 mW R

MMBT5401 TRANSISTOR(PNP) FEATURES Complementary to MMBT5551 Ideal for Medium Power Amplification and Switching SOT-23 Plastic Package MARKING 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current -0.6 A PC Collector Pow

www.msksemi.com MMBT5401-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (PNP) FEATURES Complementary to MMBT5551-MS Ideal for Medium Power Amplification and Switching 1. BASE MARKING 2L 2. EMITTER SOT 23 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -160 V VCEO Collector-Emit

www.msksemi.com MMBT5551-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (NPN) FEATURES Complementary to MMBT5401-MS Ideal for Medium Power Amplification and Switching 1. BASE 2. EMITTER MARKING G1 SOT 23 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Volt

MMBT5401 GENERAL PURPOSE TRANSISTORS PNP Silicon FEATURES High DC Current Gain Low Collector-Emitter Saturation Voltage C MECHANICAL DATA E Available in SOT-23Package Solderability MIL-STD-202, Method 208 PB Free Products Are Available 98.5% SN B Above Can Meet RoHS Environment Substance Directive Request ORDERING INFORMATION PART NUMBER PA

MMBT5551 GENERAL PURPOSE TRANSISTORS NPN Silicon FEATURES NPN Silicon Epitaxial planar Transistor For Switching And Amplifier Applications Collector Current IC=600mA C MECHANICAL DATA E Available in SOT-23 Package Solderability MIL-STD-202, Method 208 Full RoHS Compliance B ORDERING INFORMATION PART NUMBER PACKAGE SHIPPING MARKING CODE G1

MMBT5401 PNP Transistor Features For High Voltage Amplifer Applications. Silicon Epitaxial Chip. SOT-23 (TO-236) 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings (T = 25 ) A Parameter Symbol Value Unit Collector Base Voltage -VCBO 160 V Collector Emitter Voltage -VCEO 150 V Emitter Base Voltage -VEBO 5 V Collector Current -I 600 mA C Power Dissipation P

Jingdao Microelectronics co.LTD MMBT5551 MMBT5551 SOT-23 NPN TRANSISTOR 3 FEATURES Complementary to MMBT5401 Ideal for Medium Power Amplification and Switching 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2 Symbol Parameter Value Unit 1.BASE Collector Base Voltage VCBO 180 V 2.EMITTER Collector Emitter V

Jingdao Microelectronics co.LTD MMBT5401 MMBT5401 SOT-23 PNP TRANSISTOR 3 FEATURES Complementary to MMBT5551 Ideal for Medium Power Amplification and Switching 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2 Symbol Parameter Value Unit 1.BASE Collector Base Voltage VCBO -160 V 2.EMITTER 3.COLLECTOR Collec

MMBT5087 PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications Marking 2Q SOT-23 Absolute Maximum Ratings (Ta = 25 OC) Characteristics at Ta = 25 OC REV.08 1 of 2 MMBT5087 REV.08 2 of 2

MMBT5551DW Descriptions Double silicon NPN transistor in a SOT-363 Plastic Package. Features High voltage, complementary pair with MMBT5401DW. Applications General purpose high voltage amplifier. Equivalent Circuit Pinning PIN 1 4 Emitter PIN 2 5 Base PIN 3 6 Collector hFE Classifications & Marking See Marking Instructions. REV.08 1 of 6 MMBT55

MMBT5401DW Descriptions Double silicon PNP transistor in a SOT-363 Plastic Package. Features High voltage, complementary Pair with MMBT5551DW. Applications General purpose high voltage amplifier. Equivalent Circuit Pinning PIN 1 4 Emitter PIN 2 5 Base PIN 3 6 Collector hFE Classifications & Marking See Marking Instructions. REV.08 1 of 6 MMB

NPN General Purpose Amplifier For low noise, high gain, general purpose amplifier For low noise, high gain, general purpose amplifier applications at collector currents from 1 A to 50mA. applications at collector currents from 1 A to 50mA. 1 Base 2 Emitter 3 Collector 1 Base 2 Emitter 3 Collector Marking Marking 1RM SOT-23 Plastic Package 23 Plastic Package Absolu

Integrated in OVP&OCP products provider MMBT5551 TRANSISTOR (NPN) FEATURES SOT-23 Complementary to MMBT5401 Ideal for medium power amplification and switching 1 BASE 2 EMITTER 3 COLLECTOR MARKING G1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emi

Integrated in OVP&OCP products provider MMBT5401 TRANSISTOR (PNP) FEATURES SOT-23 Complementary to MMBT5551 Ideal for medium power amplification and switching 1 BASE 2 EMITTER 3 COLLECTOR MARKING 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emit

MMBT5401 SOT-23 PNP Transistors 3 2 1.Base Features 2.Emitter 1 3.Collector High Voltage Transistors Pb-Free Packages are Available Simplified outline(SOT-23) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -160 V Collector-emitter voltage VCEO -150 V Emitter-base voltage VEBO -5 V Collector current-continuous IC -0.6 A Collector P

MMBT5551 SOT-23 NPN Transistors 3 2 1.Base 2.Emitter Features 1 3.Collector High Voltage Transistors Simplified outline(SOT-23) Pb-Free Packages are Available Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 180 V Collector-emitter voltage VCEO 160 V Emitter-base voltage VEBO 6 V Collector current-continuous IC 0.6 A Collector Powe

MMBT5401 MMBT5401 TRANSISTOR (PNP) FEATURES Complimentary to MMBT5551 MARKING 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage - -160 V VCEO Collector-Emitter Voltage - -150 V VEBO Emitter-Base Vo

MMBT5401 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBT5551 ; Complementary to MMBT5551 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data SOT-23 SOT-23 Small Outline Plastic Pack

MMBT5551 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBT5401 ; Complementary to MMBT5401 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data SOT-23 SOT-23 Small Outline Plastic Pack

MMBT5551 MMBT5551 AO3400 SI2305 MMBT5551 TRANSISTOR (NPN) FEATURES Complementary to MMBT5401 SOT-23 Ideal for medium power amplification and switching 1 BASE MARKING G1 2 EMITTER 3 COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Volt

MMBT3904 MMBT5401 AO3400 SI2305 MMBT5401 TRANSISTOR (PNP) FEATURES Complementary to MMBT5551 Ideal for medium power amplification and switching SOT-23 1 BASE 2 EMITTER MARKING 2L 3 COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Vo

RoHS COMPLIANT MMBT5551Q NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 High Voltage Transistors NPN Silicon Part no. with suffix Q means AEC-Q101 qualified Applications Linear amplification Mechanical Data SOT-23 Case Terminals Tin plated leads, solder

RoHS RoHS COMPLIANT COMPLIANT MMBT5401Q PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 Part no. with suffix Q means AEC-Q101 qualified Applications Switching and linear amplification Mechanical Data SOT-23 Case Terminals Tin plated leads, solderable per J-

RoHS COMPLIANT MMBT5551 NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Moisure Sensitivity Level 1 Marking G1 Maximum Rantings (Ta=25 ) Item Symbol Unit Conditions Value Collector-Emitter Voltage* VCEO V IC=1.0mAdc, IB=0 160 Collector-Base Voltage VCBO V IC=100uAdc, IE=0 180 Emitter-Base Voltage VEBO V IE=10uAdc, IC=0 6.0

RoHS COMPLIANT MMBT5401 PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Moisure Sensitivity Level 1 Marking 2L Maximum Rantings (Ta=25 ) Item Symbol Unit Conditions Value Collector-Emitter Voltage* VCEO V IC=-1.0mAdc, IB=0 -160 Collector-Base Voltage VCBO V IC=-100uAdc, IE=0 -180 Emitter-Base Voltage VEBO V IE=-10uAdc, IC

MMBT5551 MMBT5551 SOT-23 Plastic-Encapsulate Transistors(NPN) General description SOT-23 Plastic-Encapsulate Transistors(NPN) FEATURES Complementary to MMBT5401 Power Dissipation of 300mW High Stability and High Reliability SOT-23 Small Outline Plastic Package Epoxy UL 94V-0 DEVICE MARKING CODE Device Type Device Marking MMBT5551 G1 . Maximum Ra

MMBT5401 MMBT5401 SOT-23 Plastic-Encapsulate Transistors(PNP) General description SOT-23 Plastic-Encapsulate Transistors(PNP) FEATURES Complementary to MMBT5551 Power Dissipation of 300mW High Stability and High Reliability SOT-23 Small Outline Plastic Package Epoxy UL 94V-0 DEVICE MARKING CODE Device Type Device Marking MMBT5401 2L . Maximum Ra

SOT-523 Plastic-Encapsulate Transistors TRANSISTOR ( PNP) MMBT5401T SOT 523 FEATURES Complementary to MMBT5551W Small Surface Mount Package Ideal for Medium Power Amplificationand Switching MARKING K4M 1. BASE 2. EMITTER MAXIMUM RATINGS (T =25 unless otherwise noted) a 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage -160 V VCEO Collector-Emi

Plastic-Encapsulate Transistors DUAL TRANSISTOR (NPN+PNP) FEATURES Epitaxial Planar Die Construction 6 5 Ideal for low Power Amplification and Switching 4 One 5551(NPN), one 5401(PNP) 1 2 3 MRKING KNM MAXIMUM RATINGS NPN 5551 (Ta=25 unless otherwise noted) Symbol Para

MMBT5551 TRANSISTOR (NPN) FEATURES SOT-23 Complementary to MMBT5401 Ideal for medium power amplification and switching 1 BASE 2 EMITTER 3 COLLECTOR MARKING G1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Curren

MMBT5401 TRANSISTOR (PNP) FEATURES SOT-23 Complementary to MMBT5551 Ideal for medium power amplification and switching 1 BASE 2 EMITTER 3 COLLECTOR MARKING 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Curren

MMBT5551T TRANSISTOR (NPN) FEATURES Complementary to MMBT5401 Ideal for medium power amplification and switching MARKING G1 MAXIMUM RATINGS (T =25 unless otherwise noted) A Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V V CEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V I Collector Current -Continuous 0.6 A C P Collector Power Dissipation 200

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD MMBT5551 FEATURES NPN High Voltage Transistor MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Emitter Voltage V 160 Vdc CEO - Collector Base Voltage V 180 Vdc CBO - Emitter

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD MMBT5401 FEATURES PNP High Voltage Transistor MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage V -150 Vdc CEO - Collector-Base Voltage V -160 Vdc CBO - Emitte

MMBT5551 NPN GENERAL PURPOSE SWITCHING TRANSISTOR 160Volts POWER 300mWatts VOLTAGE FEATURES NPN epitaxial silicon, planar design. Collector-emitter voltage VCE=160V. Collector current IC=0.6A. ansition frequency fT>100MHz @ Tr IC=10mAdc, VCE=6Vdc, f=100MHz. In compliance with ER RoHS 2002/95/EC directives. MECHANICAL DATA Case SOT-23, Plastic 3 Terminals S

MMBT5401 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE -150Volts POWER 300mWatts FEATURES PNP epitaxial silicon, planar design. Collector-emitter voltage VCE=-150V. Collector current IC=-0.6A. ansition frequency fT>100MHz @ IC=- Tr 20mAdc, VCE=-6Vdc, f=100MHz. In compliance with ER RoHS 2002/95/EC directives. MECHANICAL DATA Case SOT-23, Plastic 3 Terminal

MMBT5551 BIPOLAR TRANSISTOR (NPN) FEATURES Complementary to MMBT5401 Ideal for medium power amplification and switching Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symb

MMBT5401 BIPOLAR TRANSISTOR (PNP) FEATURES Complementary to MMBT5551 Ideal for medium power amplification and switching Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symb

NPN MMBT5551 MMBT5551 TRANSISTOR (NPN) FEATURES SOT-23 Complementary to MMBT5401 Ideal for medium power amplification and switching 1 BASE 2 EMITTER 3 COLLECTOR MARKING G1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter

PNP MMBT5401 MMBT5401 TRANSISTOR (PNP) FEATURES SOT-23 Complementary to MMBT5551 Ideal for medium power amplification and switching 1 BASE 2 EMITTER 3 COLLECTOR MARKING 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter V

MMBT5551 TRANSISTOR(NPN) SOT-23 Plastic-Encapsulate Transistors SOT-23 Features Complementary to MMBT5401 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data SOT-23 Small Outline Plastic Package UL Epoxy UL 94V-0 Mounting Position Any Marking G1 Maximum Ratings & Thermal Characteristics (Ratings at 25 ambient temperature unl