MMBT5210 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2N5210/MMBT5210NPN General Purpose AmplifierCThis device is designed for low noise, high gain, general purposeamplifier applications at collector currents from 1A to 50 mA.ECTO-92BEB SOT-23Mark: 3MAbsolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 50 VVCBO Collector-Base Voltage 50 VVEBO Emitter-B

2N5210/MMBT5210NPN General Purpose AmplifierCThis device is designed for low noise, high gain, general purposeamplifier applications at collector currents from 1A to 50 mA.ECTO-92BEB SOT-23Mark: 3MAbsolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 50 VVCBO Collector-Base Voltage 50 VVEBO Emitter-B

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT5088LT1/DMMBT5088LT1Low Noise Transistors*MMBT5089LT1COLLECTORNPN Silicon3*Motorola Preferred Device1BASE23EMITTERMAXIMUM RATINGS1Rating Symbol 5088LT1 5089LT1 Unit2CollectorEmitter Voltage VCEO 30 25 VdcCASE 31808, STYLE 6CollectorBase Voltage VCBO 35 30 VdcSOT23 (TO236A

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT5550LT1/DMMBT5550LT1High Voltage Transistors*MMBT5551LT1COLLECTORNPN Silicon3*Motorola Preferred Device1BASE23EMITTERMAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmitter Voltage VCEO 140 VdcCollectorBase Voltage VCBO 160 VdcCASE 31808, STYLE 6SOT23 (TO236AB)Emitter

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT5087LT1/DLow Noise Transistor COLLECTOR MMBT5087LT13PNP SiliconMotorola Preferred Device1BASE2EMITTER3MAXIMUM RATINGSRating Symbol Value Unit1CollectorEmitter Voltage VCEO 50 Vdc 2CollectorBase Voltage VCBO 50 VdcCASE 31808, STYLE 6EmitterBase Voltage VEBO 3.0 VdcSOT23 (

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT5401LT1/DHigh Voltage TransistorMMBT5401LT1COLLECTORPNP Silicon3Motorola Preferred Device1BASE23EMITTERMAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmitter Voltage VCEO 150 VdcCASE 31808, STYLE 6CollectorBase Voltage VCBO 160 VdcSOT23 (TO236AB)EmitterBase Volt

2N5771 MMBT5771CEC TO-92BBSOT-23EMark: 3RPNP Switching TransistorThis device is designed for very high speed saturated switchingat collector currents to 100 mA. Sourced from Process 65. SeePN4258 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 15 VVCBO Collector-Base Voltage

Discrete POWER & SignalTechnologies2N5962 MMBT5962CEC TO-92BBE SOT-23Mark: 117NPN General Purpose AmplifierThis device is designed for use as low noise, high gain, generalpurpose amplifiers requiring collector currents to 50 mA.Sourced from Process 07. See 2N5088 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value U

2N5401 MMBT5401CEC TO-92BB SOT-23EMark: 2LPNP General Purpose AmplifierThis device is designed as a general purpose amplifier and switchfor applications requiring high voltages.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 150 VVCBO Collector-Base Voltage 160 VVEBO Emitter-Base Voltage 5.0 VI

June 20092N5551 / MMBT5551NPN General Purpose AmplifierFeatures This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Suffix -C means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base) Suffix -Y means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V) 2N5551 MMBT555132TO-92SOT-23

MPS5179 MMBT5179 PN5179CEC TO-92 C TO-92B B ESOT-23E BMark: 3CNPN RF TransistorThis device is designed for use in low noise UHF/VHF amplifierswith collector currents in the 100 A to 30 mA range in commonemitter or common base mode of operation, and in low frequencydrift, high ouput UHF oscillators. Sourced from Process 40.Absolute Maximum Ratings* TA = 25C unless o

February 2008MMBT5770NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from process 43.32SOT-2311. Base 2. Emitter 3. CollectorAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 30 VVCEO Collect

2N5086/2N5087/MMBT5087PNP General Purpose Amplifier3 This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50mA.2SOT-23TO-92 1Mark: 2Q11. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collect

Discrete POWER & SignalTechnologies2N5962 MMBT5962CEC TO-92BBE SOT-23Mark: 117NPN General Purpose AmplifierThis device is designed for use as low noise, high gain, generalpurpose amplifiers requiring collector currents to 50 mA.Sourced from Process 07. See 2N5088 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value U

August 2005MMBT5550NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers.32SOT-231Marking: 1F1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 140 VVCBO Collector-Base Voltage 160 VVEBO

MMBT5401PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for Capplications requiring high voltage.EBSOT-23Mark: 2LPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCEO Collector-Emitter Voltage -150 VVCBO Collector-Base Voltage -160 VVEBO Emitter-Bas

2N5088 MMBT50882N5089 MMBT5089CEC TO-92BBSOT-23EMark: 1Q / 1RNPN General Purpose AmplifierThis device is designed for low noise, high gain, general purposeamplifier applications at collector currents from 1A to 50 mA.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 2N5088 30 V2N5089 25 VVCBO

MMBT5551 160V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > 160V Case: SOT-23 Case Material: Molded Plastic, Green molding compound. Ideal for Low Power Amplification and Switching UL Flammability Classification Rating 94V-0 Complementary PNP Type Available (MMBT5401) Moisture Sensitivity: Level 1 per J-STD-020 Totally

MMBT5401 150V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT23 Complementary NPN Type - MMBT5551 Case Material: Molded Plastic, Green Molding Compound Ideal for Low Power Amplification and Switching UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes

MCCMicro Commercial ComponentsTMMMBT540120736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939FeaturesPNP Plastic Collector Current: ICM=0.6AEncapsulate Collector-Base Voltage: V(BR)CBO=160V Operating And Storage Temperatures 55OC to 150OCTransistor Capable of 0.3Watts of Power Dissipation

MCCMMBT5343-OTM Micro Commercial Components20736 Marilla Street ChatsworthMMBT5343-YMicro Commercial ComponentsCA 91311MMBT5343-GPhone: (818) 701-4933Fax: (818) 701-4939MMBT5343-LFeatures Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)NPN Silicon Epoxy meets UL 94 V-0 flammability rating Moisure Sensitiv

MCCMicro Commercial ComponentsTMMMBT555120736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939FeaturesNPN Plastic Halogen free available upon request by adding suffix "-HF" Collector Current: ICM=0.6AEncapsulate Collector-Base Voltage: V(BR)CBO=180V Operating And Storage Temperatures 55OC to 150OC

MCCMicro Commercial ComponentsTMMMBT540120736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939FeaturesPNP Plastic Halogen free available upon request by adding suffix "-HF" Collector Current: ICM=0.6AEncapsulate Collector-Base Voltage: V(BR)CBO=160V Operating And Storage Temperatures 55OC to 150OC

MMBT5088L, MMBT5089LLow Noise TransistorsNPN SiliconFeatures S and NSV Prefix for Automotive and Other Applications Requiringhttp://onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant*SOT-23 (TO-236)CASE 318MAXIMUM RATINGSSTYLE 6Rating Symbol Value Unit

MMBT5088LT1G,SMMBT5088LT1G,MMBT5089LT1G,SMMBT5089LT1GLow Noise Transistorshttp://onsemi.comNPN SiliconFeatures AEC-Q101 Qualified and PPAP CapableSOT-23 (TO-236) S Prefix for Automotive and Other Applications Requiring UniqueCASE 318Site and Control Change RequirementsSTYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant

MMBT5401L, SMMBT5401L,NSVMMBT5401LHigh Voltage TransistorPNP Siliconhttp://onsemi.comFeatures S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSOT-23 (TO-236)CompliantCASE 318STYLE 6MAXIMUM RATINGSCOLLECTO

MMBT5550L, MMBT5551LHigh Voltage TransistorsNPN SiliconFeatures S Prefix for Automotive and Other Applications Requiring Uniquewww.onsemi.comSite and Control Change Requirements; AEC-Q101 Qualified andPPAP CapableCOLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGSRating Symbol Value Unit2EMITTERCollector

MMBT5551M3NPN High VoltageTransistorThe MMBT5551M3 device is a spin-off of our popular SOT-23three-leaded device. It is designed for general purpose high voltageapplications and is housed in the SOT-723 surface mount package.www.onsemi.comThis device is ideal for low-power surface mount applications whereboard space is at a premium.COLLECTORFeatures3 Reduces Board Spa

MMBT5401WHigh Voltage TransistorPNP SiliconFeatures NSV Prefix for Automotive and Other Applications Requiringwww.onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable COLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGSRating Symbol Value Unit2EMITTERCollector-Emitter Vo

MMBT5088LT1G,MMBT5089LT1GLow Noise TransistorsNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant31MAXIMUM RATINGSBASERating Symbol Value Unit2Collector-Emitter Voltage VCEO VdcEMITTERMMBT5088 30MMBT5089 25Collector-Base Voltage VCBO Vdc3SOT-23 (TO-236)MMBT5088 35MMBT5089 30 CASE 31

March March 201882N5551 / MMBT5551NPN General-Purpose AmplifierDescriptionThis device is designed for general-purpose high-voltageamplifiers and gas discharge display drivers. 2N5551 MMBT555132TO-92SOT-231Marking: 3S1. Base 2. Emitter 3. CollectorOrdering Information(1)Part Number Top Mark Package Packing Method2N5551TA 5551 TO-92 3L Ammo2N5551TFR 5551 TO-92 3L

MMBT589LT1G,NSVMMBT589LT1GHigh Current Surface MountPNP Silicon SwitchingTransistor for Loadhttp://onsemi.comManagement in Portable Applications30 VOLTS, 2.0 AMPSPNP TRANSISTORSFeatures AEC-Q101 Qualified and PPAP Capable NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change RequirementsSOT-23 (TO-236) These Devices are P

MMBT5401M3High Voltage TransistorPNP SiliconThe MMBT5401M3 device is a spin-off of our popular SOT-23three-leaded device. It is designed for general purpose amplifierapplications and is housed in the SOT-723 surface mount package.www.onsemi.comThis device is ideal for low-power surface mount applications whereboard space is at a premium.FeaturesSOT-723 NSV Prefix for Au

MMBT5087LLow Noise TransistorPNP SiliconFeatures NSV Prefix for Automotive and Other Applications Requiringwww.onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP CapableCOLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector-Emitter Volt

MMBT5550LT1G,MMBT5551LT1GHigh Voltage TransistorsNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant3MAXIMUM RATINGS 1BASERating Symbol Value UnitCollector-Emitter Voltage VCEO Vdc2MMBT5550 140EMITTERMMBT5551160Collector-Base Voltage VCBO VdcMARKINGMMBT5550 1603DIAGRAMMMBT555118

MMBT589LT1G,NSVMMBT589LT1GHigh Current Surface MountPNP Silicon SwitchingTransistor for Loadwww.onsemi.comManagement in Portable Applications30 VOLTS, 2.0 AMPSPNP TRANSISTORSFeatures NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BF

MMBT589LT1G,NSVMMBT589LT1GHigh Current Surface MountPNP Silicon SwitchingTransistor for Loadhttp://onsemi.comManagement in Portable Applications30 VOLTS, 2.0 AMPSPNP TRANSISTORSFeatures AEC-Q101 Qualified and PPAP Capable NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change RequirementsSOT-23 (TO-236) These Devices are P

MMBT5401LT1G,SMMBT5401LT1G,MMBT5401LT3GHigh Voltage TransistorPNP Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change RequirementsSOT-23 (TO-236)CASE 318 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSTYLE 6Compliant*COLLECTORMAXIMUM RAT

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MMBT5401L, SMMBT5401L,NSVMMBT5401LHigh Voltage TransistorPNP Siliconwww.onsemi.comFeatures S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSOT-23 (TO-236)CompliantCASE 318STYLE 6MAXIMUM RATINGSCOLLECTOR

MMBT5401WHigh Voltage TransistorPNP SiliconFeatures NSV Prefix for Automotive and Other Applications Requiringwww.onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable COLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGSRating Symbol Value Unit2EMITTERCollector-Emitter Vo

MMBT589LT1GHigh Current Surface MountPNP Silicon SwitchingTransistor for LoadManagement in http://onsemi.comPortable Applications30 VOLTS, 2.0 AMPSFeaturesPNP TRANSISTORS These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantCOLLECTOR3MAXIMUM RATINGS (TA = 25C)1Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO -30 VdcCollector-

MMBT5088L, MMBT5089LLow Noise TransistorsNPN SiliconFeatures S and NSV Prefix for Automotive and Other Applications Requiringwww.onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantSOT-23 (TO-236)CASE 318MAXIMUM RATINGSSTYLE 6Rating Symbol Value UnitCOL

MMBT5401WHigh Voltage TransistorPNP SiliconFeatures NSV Prefix for Automotive and Other Applications Requiringwww.onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable COLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGSRating Symbol Value Unit2EMITTERCollector-Emitter Vo

MMBT5087LT1GLow Noise TransistorPNP SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGS1Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO -50 VdcCollector-Base Voltage VCBO -50 Vdc2EMITTEREmitter-Base Voltage VEBO -3.0 VdcCollector Current - Continuous IC -50 mAdcTHERMA

MMBT5088LT1G,SMMBT5088LT1G,MMBT5089LT1G,SMMBT5089LT1GLow Noise Transistorshttp://onsemi.comNPN SiliconFeatures AEC-Q101 Qualified and PPAP CapableSOT-23 (TO-236) S Prefix for Automotive and Other Applications Requiring UniqueCASE 318Site and Control Change RequirementsSTYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant

MMBT5401LT1G,SMMBT5401LT1G,MMBT5401LT3GHigh Voltage TransistorPNP Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change RequirementsSOT-23 (TO-236)CASE 318 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSTYLE 6CompliantCOLLECTORMAXIMUM RATI

MMBT5550L, MMBT5551L,SMMBT5551LHigh Voltage TransistorsNPN Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP CapableCOLLECTOR S Prefix for Automotive and Other Applications Requiring Unique3Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1BASECompliant2MAXIMUM RATINGSEMITTERRating Symbol Va

MMBT5087LLow Noise TransistorPNP SiliconFeatures NSV Prefix for Automotive and Other Applications Requiringhttp://onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP CapableCOLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector-Emitter V

MMBT5401LT1GHigh Voltage TransistorPNP SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit1Collector-Emitter Voltage VCEO -150 VdcBASECollector-Base Voltage VCBO -160 Vdc2Emitter-Base Voltage VEBO -5.0 VdcEMITTERCollector Current - Continuous IC -500 mAdcS

MMBT5087LT1GLow Noise TransistorPNP SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGS1Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO -50 VdcCollector-Base Voltage VCBO -50 Vdc2EMITTEREmitter-Base Voltage VEBO -3.0 VdcCollector Current - Continuous IC -50 mAdcTHERMA

MMBT5550L, MMBT5551L,SMMBT5551LHigh Voltage TransistorsNPN Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP CapableCOLLECTOR S Prefix for Automotive and Other Applications Requiring Unique3Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1BASECompliant2MAXIMUM RATINGSEMITTERRating Symbol Va

UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR 3 DESCRIPTION The UTC MMBT5551 is a high voltage fast-switching NPN 1power transistor. It is characterized with high breakdown voltage, 2high current gain and high switching speed. SOT-23(JEDEC TO-236) FEATURES * High Collector-Emitter Voltage: VCEO=160V * High c

UNISONIC TECHNOLOGIES CO., LTD MMBT5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *High Current Gain ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3MMBT5401G-x-AE3-R SOT-23 E B C Tape ReelNote: Pin Assignment: E: Emitter B: Base C: Collector MARKING www.unisonic.com.t

MMBT5551W NPN Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product SOT-323 A suffix of -C specifies halogen & lead-free FEATURE AL Ideal for Medium Power Amplification and Switching 33 Also Available in Lead Free Version Top View C B Complementary to MMBT5401W 11 22K EDCollector H JF G3 MARKING: K4N Mi

MMBT591PNP SiliconElektronische Bauelemente General Purpose TransistorRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeSOT-23FEATURESDim Min MaxCOLLECTOR3 A 2.800 3.0403B 1.200 1.400Power dissipation11C 0.890 1.1102PCM : 0.5 WBASED 0.370 0.500Collector CurrentG 1.780 2.040ICM : -1 A A2H 0.013 0.100LEMITTERCol

MMBT5401W PNP Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product SOT-323 A suffix of -C specifies halogen & lead-free FEATURE AL Ideal for Medium Power Amplification and Switching 33 Also Available in Lead Free Version Top View C B Complementary to MMBT5551W 11 22K ECollector 3 DH JF GMARKING: K4M 1

MMBT5551NPN SiliconElek t ronische Bauelemente General Purpose TransistorRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-free SOT-23Dim Min MaxAL A 2.800 3.040B 1.200 1.4003 FEATURESC 0.890 1.110STop ViewB1 2D 0.370 0.500G 1.780 2.040 Power dissipation V GH 0.013 0.100o PCM: 0.3 W (Tamb=25 C) J 0.085 0.177CK 0.450 0.600 Collect

MMBT589PNP SiliconElektronische BauelementeGeneral Purpose TransistorRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeFEATURESSOT-23A2 Dim Min MaxLEmitter3A 2.800 3.0403B 1.200 1.400Top View SB1121 BaseC 0.890 1.1102D 0.370 0.500V GG 1.780 2.040Collector 3H 0.013 0.100CJ 0.085 0.177HJD K K 0.450 0

MMBT5401 PNP Silicon General PurposeTransistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES ALIdeal for medium power amplification and switching 33Top View C B11 2MARKING 2K E2L DH JF GABSOLUTE MAXIMUM RATINGS Millimeter MillimeterREF. REF. Min. Max. Min. Max.Parameter Symb

MMBT593 PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Collector AL3 Medium Power Transistor 33Top View C B1 11 2BaseMARKING 2K E 593 2 DEmitterH JF GABSOLUTE MAXIMUM RATINGS Millimeter MillimeterREF. REF.Min. Max. Min. Max.Paramet

www.jscj-elec.com AD-MMBT5551 series JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-MMBT5551 Series Plastic-Encapsulated Transistor AD-MMBT5551 series Transistor (NPN) FEATURES Complementary to AD-MMBT5401 series Ideal for medium power amplification and switching AEC-Q101 qualified MARKING G1 = Device code G1 EQUIVALENT CIRCUIT 3 1 2 Versio

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors MMBT5551 TRANSISTOR (NPN) SOT23 FEATURES Complementary to MMBT5401 Ideal for Medium Power Amplification and Switching 1. BASE MARKING: G1 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value UnitVCBO Collector-Base Voltage

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors MMBT5550 TRANSISTOR (NPN) SOT23 FEATURES High Voltage Transistor MARKING:M1F MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage 160 V CBO3. COLLECTOR V Collector-Emitter Voltage 140 V CEOV

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT589 TRANSISTOR (PNP) FEATURES High current surface mount PNP silicon switching transistor for 1. BASE Load management in portable applications 2. EMITTER 3. COLLECTOR MARKING :589 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVC

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT5401 TRANSISTOR (PNP) SOT23 FEATURES Complementary to MMBT5551 Ideal for Medium Power Amplification and Switching 1. BASE MARKING: 2L 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value UnitVCBO Collector-Base Voltage -

www.jscj-elec.com AD-MMBT5401 series JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-MMBT5401 series Plastic-Encapsulated Transistor AD-MMBT5401 series Transistor (PNP) FEATURES Complementary to AD-MMBT5551 series For medium power amplification and switching AEC-Q101 qualified MARKING 2L = Device code 2L Version 1.0 1 / 6 2021-07-01 www.jscj-elec

Zowie Technology CorporationHigh Voltage TransistorsLead free productHalogen-free typeFEATURE We declare that the material of product compliance with RoHS requirements.3COLLECTOR3MMBT5550GH11BASEMMBT5551GH 22SOT-23EMITTERMAXIMUM RATINGSRating Symbol Value UnitCollectorEmitter Voltage V CEO 140 VdcCollectorBase Voltage V CBO 160 VdcEmitterB

Zowie Technology CorporationHigh Voltage TransistorLead free productHalogen-free typeFEATURE We declare that the material of product compliance with RoHS requirements.MMBT5401GH312SOT-23MAXIMUM RATINGSRating Symbol Value UnitCollectorEmitter Voltage V 150 VdcCEO3COLLECTORCollectorBase Voltage V CBO 160 VdcEmitterBase Voltage V EBO 5.0

MMBT5551TRANSISTOR(NPN)SOT23 FEATURES Complementary to MMBT5401 Ideal for Medium Power Amplification and Switching 1. BASE MARKING: G1 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value UnitVCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current 6

MMBT5550TRANSISTOR(NPN) SOT23 FEATURES High Voltage Transistor MARKING:M1F MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage 160 V CBO 3. COLLECTOR V Collector-Emitter Voltage 140 V CEOV Emitter-Base Voltage 6 V EBOI Collector Current 600 mA CPC Collector Power Dissipation 225 mW

MMBT58 9TRANSISTOR(PNP)SOT-23 FEATURES High current surface mount PNP silicon switching transistor for Load management in portable applications 1. BASE 2. EMITTER MARKING :589 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5

MMBT5401TRANSISTOR(PNP) SOT-231. BASE FEATURES 2. EMITTER 3. COLLECTOR Complementary to MMBT5551 Ideal for medium power amplification and switching MARKING: 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM5551MAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Emitter VoltageVCEO 160 Vdc-

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM5401MAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Emitter VoltageVCEO -150 Vdc-

MMBT5551 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Complementary to MMBT5401 Ideal for medium power amplification and switching MARKING: G1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Ba

MMBT5401 SOT-23 Transistor(PNP)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Complementary to MMBT5551 Ideal for medium power amplification and switching MARKING: 2L Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emit

MMBT589 SOT-23 Transistor(PNP)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features High current surface mount PNP silicon switching transistor for Load management in portable applications MARKING :589 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V VCEO Collector-Emitte

MMBT5401High Voltage PNP TransistorsCOLLECTOR3311BASE22SOT-23EMITTERWEITRONhttp://www.weitron.com.twMMBT5401ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)Characteristics Symbol Min Max UnitON CHARACTERISTICSDC Current Gain-50(IC=-1.0mAdc, VCE=-5.0Vdc)hFE-60 240(IC=-10mAdc, VCE=-5.0Vdc)50-(IC=-50mAdc, VCE=-5.0Vdc)

MMBT5088MMBT5089COLLECTORLow Noise NPN Transistor33Surface Mount112BASEP b Lead(Pb)-Free2SOT-23EMITTERMaximum RatingsRating Symbol5088LT1 5089LT1 UnitCollector-Emitter Voltage V 30 25 VdcCE OCollector-B as e Voltage VCB O 35 30 VdcE m itter-B as e Voltage VE B O 4.5 VdcCollector Current-Continuous ICmAdc50Thermal CharacteristicsCharacteristics

MMBT5550MMBT5551High Voltage NPN TransistorsCOLLECTOR3311BASE22SOT-23EMITTERMMBT5550 MMBT5551VCEO 140 160160 1806.06005563002.4417MMBT5550 = M1F ; MMBT5551 = G1(TA=25 C unless otherwise noted)(3)MMBT5550 1401.0 ,MMBT5551 160MMBT5550 160-100 ,180MMBT55516.010 ,WEITRONhttp://www.weitron.com.twMMBT5550MMBT5551ELECTRICAL

FM120-M MMBT5551DW1T1WILLASTHRUDUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTORFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low prFEATUREofile surface mounted appli

FM120-M WILLASMMBT5401LT1THRUHigh Voltage TransistorFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123HFEATURE Low profile surface mounted application in order to o

FM120-M WILLASTHRUMMBT5551WT1FM1200-M 1.0A SURFACE MOUNT SCHOTTKYDUAL NPN SMALL SIGNAL SURFACE BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductMOUNT TRANSISTORPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in

FM120-M WILLASMMBT555xLT1THRUHigh Voltage TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize boa

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT5401LT1 TRANSISTOR (PNP) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR - Power dissipation 2. 4 PCM: 0.3 W (Tamb=25) 1. 3 Collector current ICM: -0.6 A Collector-base voltage V(BR)CBO: -160 V Operating and storage junction temperature range Unit: mm

Shenzhen Tuofeng Semiconductor Technology Co., Ltd. SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT5551LT1 TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation 2. 4 PCM: 0.3 W (Tamb=25) 1. 3 Collector current ICM: 0.6 A Collector-base voltage V(BR)CBO: 180 V Operating and storage junction temperature range Unit: mm TJ, T

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors MMBT5401 TRANSISTOR (PNP) FEATURES Complimentary to MMBT5551 MARKING:2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-B

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors MMBT5551 TRANSISTOR (NPN) FEATURES Complimentary to MMBT5401 MARKING:G1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-B

MMBT5401T(BR3CG5401T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features , MMBT5551T(BR3DG5551T)High voltage, complementary Pair with MMBT5551T(BR3DG5551T). / Applications General purpose high voltag

MMBT5551 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features , MMBT5401 High voltage, complementary pair with MMBT5401. / Applications General purpose high voltage amplifier. / Eq

MMBT5401 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features , MMBT5551 High voltage, complementary Pair with MMBT5551. / Applications General purpose high voltage amplifier.

MMBT5551T(BR3DG5551T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features , MMBT5401T(BR3CG5401T)High voltage, complementary pair with MMBT5401T(BR3CG5401T). / Applications General purpose high voltag

MMBT5401-HAF PNP Silicon Epitaxial Planar Transistor Features Halogen and Antimony Free(HAF), RoHS compliant 1. Base 2. Emitter 3. Collector TO-236 Plastic Package Applications For high voltage amplifier applications Absolute Maximum Ratings (T = 25 ) aParameter Symbol Value Unit Collector Base Voltage -V 160 V CBOCollector Emitter Voltage -V 150 V CEOEmitt

MMBT5551 NPN Silicon Epitaxial Planar Transistors for high voltage amplifier applications. TO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 180 V Collector Emitter Voltage VCEO 160 VEmitter Base Voltage VEBO 6 VCollector Current IC 600 mAPower Dissipation Ptot 350 mWOJunction Temperature Tj 150 C O

MMBT5401 PNP Silicon Epitaxial Planar Transistor for high voltage amplifier applications TO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 160 VCollector Emitter Voltage -VCEO 150 VEmitter Base Voltage -VEBO 5 VCollector Current Continuous -IC 600 mAPower Dissipation Ptot 350 mWOJunction Temperature Tj 1

SMD Type TransistorsPNP TransistorsMMBT5087 (KMBT5087)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=-100mA Collector Emitter Voltage VCEO=-50V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage

SMD Type TransistorsSMD TypeNPN Transistors(KMBT5551)MMBT5551SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13FeaturesHigh Voltage TransistorsPb-Free Packages are Available1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO 180 VCollector-emitter volt

SMD Type TransistorsNPN TransistorsMMBT5550 (KMBT5550)SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=0.6A Collector Emitter Voltage VCEO=140V1 2 High Voltage Transistor+0.1+0.050.95 -0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

SMD Type TransistorsSMD TypePNP TransistorsMMBT5401 (KMBT5401)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13FeaturesHigh Voltage TransistorsPb-Free Packages are Available1 2+0.10.95-0.1 0.1+0.05-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -160 VCollector-emitter volta

SMD Type TransistorsNPN TransistorsMMBT5088 (KMBT5088)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=30V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage V

SMD Type TransistorsNPN TransistorsMMBT5089 (KMBT5089)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=25V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage V

MMBT5551NPN HIGH VOLTAGE TRANSISTOR160 Volts POWER 250 mWattsVOLTAGEFEATURES0.120(3.04)0.110(2.80) NPN Silicon, planar design Collector-emitter voltage VCE = 160V Collector current IC = 600mA Lead free in compliance with EU RoHS 2.0 0.056(1.40) Green molding compound as per IEC 61249 standard0.047(1.20)0.079(2.00) 0.008(0.20)MECHANICAL DATA0.070(1.

MMBT5401HIGH VOLTAGE TRANSISTORPNP SiliconFEATURES Lead free in compliance with EU RoHS 2.00.120(3.04) Green molding compound as per IEC 61249 standard0.110(2.80)MECHANICAL DATA0.056(1.40)0.047(1.20) Case : SOT-23 plastic case. Terminals : Solderable per MIL-STD-750,Method 20260.079(2.00) 0.008(0.20)0.070(1.80) 0.003(0.08) Standard packaging : 8mm ta

General Purpose TransistorMMBT5401-G (PNP)RoHS DeviceSOT-23Features -Epitaxial planar die construction.0.119(3.00)0.110(2.80) -Complementary NPN type available (MMBT5551-G).3 -Ideal for medium power amplification and switching.0.056(1.40)0.047(1.20)1 2Diagram: 0.006(0.15)0.079(2.00)Collector0.002(0.05)0.071(1.80)30.041(1.05) 0.100(2.55)0.035(0.90) 0.0

Product specification NPN General Purpose Transistor MMBT5551 FEATURES Pb Epitaxial planar die construction. Lead-free Complementary PNP type available (MMBT5401). Also available in lead free version. MSL 1 APPLICATIONS Ideal for medium power amplification and switching. SOT-23 ORDERING INFORMATION Type No. Marking Package Code MMBT5551 G

Product specification PNP General Purpose Transistor MMBT5401 FEATURES Pb Epitaxial planar die construction. Lead-free Complementary NPN type available (MMBT5551). Also available in lead free version. APPLICATIONS Ideal for medium power amplification and switching SOT-23 ORDERING INFORMATION Type No. Marking Package Code MMBT5401 2L SOT-23

GSTMMBT5401 High Voltage PNP Transistors Product Description Features This device is designed as a general purpose Collector-Emitter Voltage : -150V amplifier and switch. Collector-Base Voltage : -160V Collector Current-Continuous : -500mA Lead(Pb)-FreePackages & Pin Assignments GSTMMBT5401F(SOT-23) Pin Description1 Base 2 Emitter 3 Collector Marking Information

MMBT5551NPN General Purpose Transistor FEATURES Epitaxial planar die construction. Complementary PNP type available (MMBT5401). Also available in lead free version. APPLICATIONS Ideal for medium power amplification and switching SOT-23MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value UNITVCBO collector-base voltage 180 V VCEO collecto

MMBT5401FEATURESFEATURESFEATURESFEATURESPNP High Voltage TransistorMAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGSCharacteristic Symbol Rating UnitCollector-Emitter VoltageV -150 VdcCEOCollector-Base Voltage V -160 VdcCBOEmitter-Base Voltage V -6.0 VdcEBOCollector CurrentContinuous Ic -500 mAdcTHERMAL CHARACTERISTICSTHERMAL CHARACTERISTICS

RUMW UMW MMBT5401SOT-23 Plastic-Encapsulate TransistorsMMBT5401 TRANSISTOR (PNP) SOT23 FEATURES Complementary to MMBT5551 Ideal for Medium Power Amplification and Switching 1. BASE MARKING: 2L 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value UnitVCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Vo

RUMW UMW MMBT5551SOT-23 Plastic-Encapsulate TransistorsMMBT5551 TRANSISTOR (NPN) SOT23 FEATURES Complementary to MMBT5401 Ideal for Medium Power Amplification and Switching 1. BASE MARKING: G1 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value UnitVCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage

MMBT5551SOT-23 Features(TO-236) For Switching and Amplifier Applications. Silicon Epitaxial Chip 1 Base 2. Emitter 3. Collector Absolute Maximum Ratings (T =25 oC, unless otherwise noted)AParameter Symbol Value Unit Collector Base Voltage V 180 V CBO Collector Emitter Voltage V 160 V CEO Emitter Base Voltage V 6 V EBO Collector Current I 600 mA C Powe

MMBT5401FeaturesSOT-23(TO-236) For Switching and Amplifier Applications. Silicon Epitaxial Chip1 Base 2. Emitter 3. CollectoroC,Absolute Maximum Ratings (T =25 unless otherwiseAnoted)Parameter Symbol Value Unit-V 160 VCollector Base Voltage CBOCollector Emitter Voltage -V 150 VCEO-V 6VEmitter Base Voltage EBOCollector Current -I 600 mACP 350 mWPow

MMBT5550 / MMBT5551High Voltage TransistorsNPN SiliconPackage outlineFeatures High collector-emitterbreakdien voltage.SOT-23(BV = 140V~ 160V@I =1mA)CEO C This device is designed for general purpose high voltageamplifiers and gas discharge display driving. Epitaxial planar die construction. Lead-free parts for green partner, exceeds environmentalstandards of

MMBT5551Transistors SOT-23 Plastic-Encapsulate Transistors(NPN) RHOS SOT-23 FeaturesComplementary to MMBT5401 Epitaxial planar die construction Power Dissipation of 300mW 1. BASE MARKING: G12. EMITTER 3. COLLECTOR Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Parameters Symbol Value Unit Collector-Base Voltage VCBO

MMBT5401Transistors SOT-23 Plastic-Encapsulate Transistors(PNP) RHOS SOT-23 FeaturesComplementary to MMBT5551 Epitaxial planar die construction Power Dissipation of 300mW 1. BASE MARKING: 2L2. EMITTER 3. COLLECTOR Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Parameters Symbol Value Unit Collector-Base Voltage VCB

MMBT5551High Voltage TransistorsNPN SiliconFEATURES Complementary to MMBT5401SOT-23 Ideal for Medium Power Amplification and SwitchingMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipatio

MMBT5401 TRANSISTOR (PNP)FEATURES SOT-23 Complementary to MMBT5551 Ideal for Medium Power Amplification and SwitchingMARKING: 2L 32MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1Symbol Parameter Value Unit1. BASE VCBO Collector-Base Voltage -160 V 2. EMITTER VCEO Collector-Emitter Voltage -150 V 3. COLLECTORVEBO Emitter-Base Voltage -5 V IC Collect

SOT-23 Plastic-Encapsulate Transistors Formosa MSMMBT5551 TRANSISTOR (NPN) FEATURES SOT-23 Complementary to MMBT5401 Ideal for medium power amplification and switching 1. BASE 2. EMITTER 3. COLLECTOR - MARKING: G1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V

SOT-23 Plastic-Encapsulate Transistors Formosa MS MMBT5401 TRANSISTOR (PNP) FEATURES SOT-23 Complementary to MMBT5551 1. BASE Ideal for medium power amplification and switching 2. EMITTER 3. COLLECTOR - MARKING: 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -15

MMBT5551 HD-ST0.44SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N )Features SOT- 23 Complementary to MMBT5401 Ideal for Medium Power Amplification and Switching Marking: G1Symbol Parameter Value Unit VCBO Collector-Base Voltage 180 V V Collector-Emitter Voltage 160 V CCEOV Emitter-Base Voltage 6 V EBOI Collector Current 600 mA CP Coll

MMBT5401 HD-ST0.42SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( P NP )Features SOT- 23 Complementary to MMBT5551 Ideal for Medium Power Amplification and Switching Marking: 2LSymbol Parameter Value Unit VCBO Collector-Base Voltage -160 V V Collector-Emitter Voltage -150 V CEOCV Emitter-Base Voltage -5 V EBOI Collector Current -600 mA C

MMBT5551NPN General Purpose TransistorFEATURES Epitaxial planar die construction. Complementary PNP type available (MMBT5401). Also available in lead free version. APPLICATIONS Ideal for medium power amplification and switching. SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value UNIT VCBO collector-base voltage 180 V VCEO collec

MMBT5401PNP General Purpose Transistor FEATURES Epitaxial planar die construction. Complementary NPN type available(MMBT5551). Also available in lead free version. APPLICATIONS Ideal for medium power amplification and switching SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specifiedSymbol Parameter Value UNITV collector-base voltage -160 V CBO V

MMBT5551TRANSISTOR(NPN)FEATURES Complementary to MMBT5401 Ideal for Medium Power Amplification and Switching SOT-23 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Symbol Parameter Value UnitVCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipation 300 mW R

MMBT5401TRANSISTOR(PNP)FEATURES Complementary to MMBT5551 Ideal for Medium Power Amplification and Switching SOT-23 Plastic PackageMARKING: 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current -0.6 A PC Collector Pow

www.msksemi.comMMBT5401-MSSemiconductor CompianceSemiconductor CompianceTRANSISTOR (PNP)FEATURES Complementary to MMBT5551-MS Ideal for Medium Power Amplification and Switching1. BASEMARKING: 2L 2. EMITTERSOT23 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -160 V VCEO Collector-Emit

www.msksemi.comMMBT5551-MSSemiconductor CompianceSemiconductor CompianceTRANSISTOR (NPN)FEATURES Complementary to MMBT5401-MS Ideal for Medium Power Amplification and Switching1. BASE2. EMITTERMARKING: G1SOT23 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Volt

MMBT5401GENERAL PURPOSE TRANSISTORS PNP Silicon FEATURES High DC Current Gain Low Collector-Emitter Saturation Voltage C MECHANICAL DATA E Available in SOT-23Package Solderability: MIL-STD-202, Method 208 PB Free Products Are Available: 98.5% SN B Above Can Meet RoHS Environment Substance Directive Request ORDERING INFORMATION PART NUMBER PA

MMBT5551GENERAL PURPOSE TRANSISTORS NPN Silicon FEATURES NPN Silicon Epitaxial planar Transistor For Switching And Amplifier Applications Collector Current IC=600mA C MECHANICAL DATA E Available in SOT-23 Package SolderabilityMIL-STD-202, Method 208 Full RoHS Compliance B ORDERING INFORMATION PART NUMBER PACKAGE SHIPPING MARKING CODE G1

MMBT5401 PNP Transistor Features For High Voltage Amplifer Applications. Silicon Epitaxial Chip.SOT-23 (TO-236) 1.Base 2.Emitter 3.CollectorAbsolute Maximum Ratings (T = 25) AParameter Symbol Value Unit Collector Base Voltage -VCBO 160 V Collector Emitter Voltage -VCEO 150 V Emitter Base Voltage -VEBO 5 V Collector Current -I 600 mA CPower Dissipation P

Jingdao Microelectronics co.LTD MMBT5551MMBT5551SOT-23NPN TRANSISTOR3FEATURES Complementary to MMBT5401 Ideal for Medium Power Amplification and Switching 1MAXIMUM RATINGS (Ta=25 unless otherwise noted)2SymbolParameter Value Unit1.BASECollectorBase Voltage VCBO 180 V2.EMITTERCollectorEmitter V

Jingdao Microelectronics co.LTD MMBT5401MMBT5401SOT-23PNP TRANSISTOR3FEATURES Complementary to MMBT5551 Ideal for Medium Power Amplification and Switching 1MAXIMUM RATINGS (Ta=25 unless otherwise noted)2SymbolParameter Value Unit1.BASECollectorBase Voltage VCBO -160 V2.EMITTER3.COLLECTORCollec

MMBT5087PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications Marking: 2Q SOT-23 Absolute Maximum Ratings (Ta = 25 OC) Characteristics at Ta = 25 OC REV.08 1 of 2MMBT5087REV.08 2 of 2

MMBT5551DW Descriptions Doublesilicon NPN transistor in a SOT-363 Plastic Package. Features High voltage, complementary pair with MMBT5401DW. Applications General purpose high voltage amplifier. Equivalent Circuit PinningPIN 14Emitter PIN 25Base PIN 36Collector hFE Classifications & Marking See Marking Instructions. REV.081 of 6MMBT55

MMBT5401DW Descriptions Double silicon PNP transistor in a SOT-363 Plastic Package. Features High voltage, complementary Pair with MMBT5551DW. Applications General purpose high voltage amplifier. Equivalent Circuit PinningPIN 14Emitter PIN 25Base PIN 36Collector hFE Classifications & Marking See Marking Instructions. REV.081 of 6MMB

NPN General Purpose Amplifier For low noise, high gain, general purpose amplifierFor low noise, high gain, general purpose amplifier applications at collector currents from 1A to 50mA. applications at collector currents from 1A to 50mA. 1: Base 2: Emitter 3: Collector1: Base 2: Emitter 3: Collector Marking:Marking: 1RM SOT-23 Plastic Package23 Plastic Package Absolu

Integrated inOVP&OCP productsprovider MMBT5551 TRANSISTOR (NPN)FEATURES SOT-23 Complementary to MMBT5401 Ideal for medium power amplification and switching 1BASE 2EMITTER 3COLLECTOR MARKING: G1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emi

Integrated inOVP&OCP productsprovider MMBT5401 TRANSISTOR (PNP)FEATURES SOT-23 Complementary to MMBT5551 Ideal for medium power amplification and switching 1BASE 2EMITTER 3COLLECTOR MARKING: 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emit

MMBT5401 SOT-23 PNP Transistors321.BaseFeatures 2.Emitter1 3.Collector High Voltage TransistorsPb-Free Packages are Available Simplified outline(SOT-23)Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector-base voltage VCBO -160 VCollector-emitter voltage VCEO -150 VEmitter-base voltage VEBO -5 VCollector current-continuous IC -0.6 ACollector P

MMBT5551 SOT-23 NPN Transistors321.Base2.EmitterFeatures1 3.CollectorHigh Voltage Transistors Simplified outline(SOT-23)Pb-Free Packages are AvailableAbsolute Maximum Ratings Ta = 25 Parameter Symbol Rating UnitCollector-base voltage VCBO 180 VCollector-emitter voltage VCEO 160 VEmitter-base voltage VEBO 6 VCollector current-continuous IC 0.6 ACollector Powe

MMBT5551 SOT-23 Plastic-Encapsulate Transistors MMBT5551 TRANSISTOR (NPN) FEATURES Complimentary to MMBT5401 MARKING:G1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage - 180 V VCEO Collector-Emitter Voltage -

MMBT5401 MMBT5401 TRANSISTOR (PNP) FEATURES Complimentary to MMBT5551 MARKING:2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage - -160 V VCEO Collector-Emitter Voltage - -150 V VEBO Emitter-Base Vo

MMBT5401 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBT5551 ; Complementary to MMBT5551 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Pack

MMBT5551 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBT5401 ; Complementary to MMBT5401 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Pack

MMBT5551MMBT5551AO3400SI2305MMBT5551 TRANSISTOR (NPN) FEATURES Complementary to MMBT5401 SOT-23 Ideal for medium power amplification and switching 1BASE MARKING: G1 2EMITTER 3COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 180 VVCEO Collector-Emitter Voltage 160 VVEBO Emitter-Base Volt

MMBT3904MMBT5401AO3400SI2305MMBT5401 TRANSISTOR (PNP) FEATURES Complementary to MMBT5551 Ideal for medium power amplification and switching SOT-23 1BASE 2EMITTER MARKING: 2L 3COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -160 VVCEO Collector-Emitter Voltage -150 VVEBO Emitter-Base Vo

RoHS COMPLIANT MMBT5551Q NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 High Voltage Transistors NPN Silicon Part no. with suffix Q means AEC-Q101 qualified Applications Linear amplification Mechanical Data : SOT-23 Case Terminals: Tin plated leads, solder

RoHS RoHSCOMPLIANT COMPLIANTMMBT5401Q PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 Part no. with suffix Q means AEC-Q101 qualified Applications Switching and linear amplification Mechanical Data : SOT-23 Case Terminals: Tin plated leads, solderable per J-

RoHS COMPLIANT MMBT5551 NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Moisure Sensitivity Level 1 Marking:G1 Maximum Rantings (Ta=25) Item Symbol Unit Conditions Value Collector-Emitter Voltage* VCEO V IC=1.0mAdc, IB=0 160 Collector-Base Voltage VCBO V IC=100uAdc, IE=0 180 Emitter-Base Voltage VEBO V IE=10uAdc, IC=0 6.0

RoHS COMPLIANT MMBT5401 PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Moisure Sensitivity Level 1 Marking:2L Maximum Rantings (Ta=25) Item Symbol Unit Conditions Value Collector-Emitter Voltage* VCEO V IC=-1.0mAdc, IB=0 -160 Collector-Base Voltage VCBO V IC=-100uAdc, IE=0 -180 Emitter-Base Voltage VEBO V IE=-10uAdc, IC

MMBT5551 MMBT5551 SOT-23 Plastic-Encapsulate Transistors(NPN) General description SOT-23 Plastic-Encapsulate Transistors(NPN) FEATURES Complementary to MMBT5401 Power Dissipation of 300mW High Stability and High Reliability SOT-23 Small Outline Plastic Package Epoxy UL: 94V-0 DEVICE MARKING CODE: Device Type Device Marking MMBT5551 G1 . Maximum Ra

MMBT5401 MMBT5401 SOT-23 Plastic-Encapsulate Transistors(PNP) General description SOT-23 Plastic-Encapsulate Transistors(PNP) FEATURES Complementary to MMBT5551 Power Dissipation of 300mW High Stability and High Reliability SOT-23 Small Outline Plastic Package Epoxy UL: 94V-0 DEVICE MARKING CODE: Device Type Device Marking MMBT5401 2L . Maximum Ra

SOT-523 Plastic-Encapsulate TransistorsTRANSISTOR ( PNP)MMBT5401TSOT523FEATURES Complementary to MMBT5551W Small Surface Mount Package Ideal for Medium Power Amplificationand SwitchingMARKING:K4M1. BASE2. EMITTERMAXIMUM RATINGS (T =25 unless otherwise noted)a3. COLLECTORSymbol Parameter Value UnitVCBO Collector-Base Voltage -160 VVCEO Collector-Emi

Plastic-Encapsulate TransistorsDUAL TRANSISTOR (NPN+PNP) FEATURES Epitaxial Planar Die Construction6 5 Ideal for low Power Amplification and Switching4 One 5551(NPN), one 5401(PNP)123MRKING:KNMMAXIMUM RATINGS NPN 5551 (Ta=25 unless otherwise noted) Symbol Para

MMBT5551 TRANSISTOR (NPN) FEATURES SOT-23 Complementary to MMBT5401 Ideal for medium power amplification and switching 1BASE 2EMITTER 3COLLECTOR MARKING: G1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Curren

MMBT5401 TRANSISTOR (PNP) FEATURES SOT-23 Complementary to MMBT5551 Ideal for medium power amplification and switching 1BASE 2EMITTER 3COLLECTOR MARKING: 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Curren

MMBT5551T TRANSISTOR (NPN)FEATURESComplementary to MMBT5401Ideal for medium power amplification and switchingMARKING: G1MAXIMUM RATINGS (T =25 unless otherwise noted)ASymbol Parameter Value UnitsVCBO Collector-Base Voltage180 VVCEO Collector-Emitter Voltage 160 VVEBO Emitter-Base Voltage6 VI Collector Current -Continuous 0.6 ACP Collector Power Dissipation 200

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDMMBT5551FEATURES NPN High Voltage TransistorMAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Emitter VoltageV 160 VdcCEO-Collector Base VoltageV 180 VdcCBO-Emitter

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDMMBT5401FEATURES PNP High Voltage TransistorMAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter VoltageV -150 VdcCEO-Collector-Base VoltageV -160 VdcCBO-Emitte

MMBT5551NPN GENERAL PURPOSE SWITCHING TRANSISTOR160Volts POWER 300mWattsVOLTAGEFEATURESNPN epitaxial silicon, planar design. Collector-emitter voltage VCE=160V.Collector current IC=0.6A.ansition frequency fT>100MHz @ TrIC=10mAdc, VCE=6Vdc, f=100MHz.In compliance with ER RoHS 2002/95/EC directives.MECHANICAL DATACase: SOT-23, Plastic3Terminals: S

MMBT5401PNP GENERAL PURPOSE SWITCHING TRANSISTORVOLTAGE -150Volts POWER 300mWattsFEATURESPNP epitaxial silicon, planar design. Collector-emitter voltage VCE=-150V.Collector current IC=-0.6A.ansition frequency fT>100MHz @ IC=-Tr20mAdc, VCE=-6Vdc, f=100MHz.In compliance with ER RoHS 2002/95/EC directives.MECHANICAL DATACase: SOT-23, Plastic3Terminal

MMBT5551BIPOLAR TRANSISTOR (NPN)FEATURES Complementary to MMBT5401 Ideal for medium power amplification and switching Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symb

MMBT5401BIPOLAR TRANSISTOR (PNP)FEATURES Complementary to MMBT5551 Ideal for medium power amplification and switching Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symb

NPN MMBT5551MMBT5551 TRANSISTOR (NPN) FEATURES SOT-23 Complementary to MMBT5401 Ideal for medium power amplification and switching 1BASE 2EMITTER 3COLLECTOR MARKING: G1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter

PNP MMBT5401MMBT5401 TRANSISTOR (PNP) FEATURES SOT-23 Complementary to MMBT5551 Ideal for medium power amplification and switching 1BASE 2EMITTER 3COLLECTOR MARKING: 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter V

MMBT5551TRANSISTOR(NPN)SOT-23 Plastic-Encapsulate TransistorsSOT-23 Features Complementary to MMBT5401 300mW; Power Dissipation of 300mW High Stability and High ReliabilityMechanical Data SOT-23 Small Outline Plastic Package UL Epoxy UL: 94V-0 Mounting Position: AnyMarking: G1Maximum Ratings & Thermal Characteristics (Ratings at 25 ambient temperature unl