MMBT6515 - Даташиты. Аналоги. Основные параметры

MPS6515/MMBT6515 NPN General Purpose Amplifier 3 This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100mA as a 2 switch and to 100MHz as an amplifier. SOT-23 TO-92 1 Mark 3J 1 1. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* TC=25 C unless otherwise noted Symbol Parameter Valu

MPS6515/MMBT6515 NPN General Purpose Amplifier 3 This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100mA as a 2 switch and to 100MHz as an amplifier. SOT-23 TO-92 1 Mark 3J 1 1. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* TC=25 C unless otherwise noted Symbol Parameter Valu

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT6517LT1/D High Voltage Transistor MMBT6517LT1 NPN Silicon Motorola Preferred Device COLLECTOR 3 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector Emitter Voltage VCEO 350 Vdc CASE 318 08, STYLE 6 SOT 23 (TO 236AB) Collector Base Voltage VCBO 350 Vdc Emitter Base Voltage VE

MMBT6517L, NSVMMBT6517L High Voltage Transistor NPN Silicon http //onsemi.com Features NSV Prefix for Automotive and Other Applications Requiring COLLECTOR Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER C

MMBT6517L, NSVMMBT6517L High Voltage Transistor NPN Silicon http //onsemi.com Features NSV Prefix for Automotive and Other Applications Requiring COLLECTOR Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER C

MMBT6517LT1G High Voltage Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit 2 EMITTER Collector - Emitter Voltage VCEO 350 V Collector -Base Voltage VCBO 350 V 3 Emitter - Base Voltage VEBO 5.0 V Base Current IB 25 mA 1 Collector Current - C

MMBT6517L, NSVMMBT6517L High Voltage Transistor NPN Silicon http //onsemi.com Features NSV Prefix for Automotive and Other Applications Requiring COLLECTOR Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER C

SMD Type Transistors NPN Transistors MMBT6517 (KMBT6517) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=0.5A Collector Emitter Voltage VCEO=350V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9-0.1 3 1.Base COLLECTOR 2.Emitter 3.collector 1 BASE 2 EMITTER Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating

TH09/2479 TH97/2478 IATF 0113686 SGS TH07/1033 www.eicsemi.com MMBT6517 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. On special request, these transistors can be manufactured in different pin configurations. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 350 V Collector Base Voltage VCBO 350