MMBT6515 Datasheet. Specs and Replacement

Type Designator: MMBT6515  📄📄 

SMD Transistor Code: 3J

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.35 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 4 MHz

Collector Capacitance (Cc): 3.5 pF

Forward Current Transfer Ratio (hFE), MIN: 250

Noise Figure, dB: -

Package: SOT-23

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MMBT6515 datasheet

 ..1. Size:103K  fairchild semi

mmbt6515 mps6515.pdf pdf_icon

MMBT6515

MPS6515/MMBT6515 NPN General Purpose Amplifier 3 This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100mA as a 2 switch and to 100MHz as an amplifier. SOT-23 TO-92 1 Mark 3J 1 1. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* TC=25 C unless otherwise noted Symbol Parameter Valu... See More ⇒

 ..2. Size:101K  fairchild semi

mmbt6515.pdf pdf_icon

MMBT6515

MPS6515/MMBT6515 NPN General Purpose Amplifier 3 This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100mA as a 2 switch and to 100MHz as an amplifier. SOT-23 TO-92 1 Mark 3J 1 1. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* TC=25 C unless otherwise noted Symbol Parameter Valu... See More ⇒

 7.1. Size:230K  motorola

mmbt6517.pdf pdf_icon

MMBT6515

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT6517LT1/D High Voltage Transistor MMBT6517LT1 NPN Silicon Motorola Preferred Device COLLECTOR 3 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector Emitter Voltage VCEO 350 Vdc CASE 318 08, STYLE 6 SOT 23 (TO 236AB) Collector Base Voltage VCBO 350 Vdc Emitter Base Voltage VE... See More ⇒

 7.2. Size:124K  onsemi

mmbt6517lt1g.pdf pdf_icon

MMBT6515

MMBT6517L, NSVMMBT6517L High Voltage Transistor NPN Silicon http //onsemi.com Features NSV Prefix for Automotive and Other Applications Requiring COLLECTOR Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER C... See More ⇒

Detailed specifications: MMBT5551LT1G, MMBT5551M3, MMBT589LT1G, MMBT5962, MMBT6427LT1G, MMBT6428LT1, MMBT6428LT1G, MMBT6429LT1G, C945, MMBT6517LT1G, MMBT6520LT1G, MMBT6521LT1G, MMBT720, MMBT8050, MMBT8050D, MMBT8050LT1, MMBT8099LT1G

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