MMBTH10LT1G datasheet и подбор замены

 ..1. Size:102K  onsemi
 mmbth10lt1g.pdf 

MMBTH10LT1G, NSVMMBTH10LT1G, MMBTH10LT3G, MMBTH10-4LT1G VHF/UHF Transistor http //onsemi.com NPN Silicon Features AEC-Q101 Qualified and PPAP Capable SOT-23 (TO-236) NSV Prefix for Automotive and Other Applications Requiring CASE 318 Unique Site and Control Change Requirements STYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant*

 ..2. Size:151K  onsemi
 mmbth10lt1g mmbth10-04lt1g nsvmmbth10lt1g.pdf 

MMBTH10L, MMBTH10-4L, SMMBTH10-4L, NSVMMBTH10L VHF/UHF Transistor www.onsemi.com NPN Silicon Features S and NSV Prefixes for Automotive and Other Applications SOT-23 (TO-236) Requiring Unique Site and Control Change Requirements; CASE 318 AEC-Q101 Qualified and PPAP Capable STYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 1 M

 ..3. Size:204K  onsemi
 mmbth10lt1g nsvmmbth10lt1g mmbth10-04lt1g.pdf 

ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 0.1. Size:102K  onsemi
 nsvmmbth10lt1g.pdf 

MMBTH10LT1G, NSVMMBTH10LT1G, MMBTH10LT3G, MMBTH10-4LT1G VHF/UHF Transistor http //onsemi.com NPN Silicon Features AEC-Q101 Qualified and PPAP Capable SOT-23 (TO-236) NSV Prefix for Automotive and Other Applications Requiring CASE 318 Unique Site and Control Change Requirements STYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant*

 4.1. Size:88K  motorola
 mmbth10lt1rev0d.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBTH10LT1/D MMBTH10LT1 VHF/UHF Transistor COLLECTOR NPN Silicon Motorola Preferred Device 3 1 BASE 3 2 1 EMITTER 2 CASE 318-08, STYLE 6 SOT-23 (TO-236AB) MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO 25 Vdc Collector Base Voltage VCBO 30 Vdc Emitter Base Voltage VEBO 3.0 Vdc DEVI

 4.2. Size:123K  onsemi
 mmbth10lt1 mmbth10-4lt1.pdf 

MMBTH10LT1G, MMBTH10-4LT1G VHF/UHF Transistor NPN Silicon Features http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 1 MAXIMUM RATINGS BASE Rating Symbol Value Unit 2 Collector-Emitter Voltage VCEO 25 Vdc EMITTER Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage VEBO 3.0 Vdc 3 THERMAL CHARACTERISTICS 1 Character

 4.3. Size:445K  willas
 mmbth10lt1.pdf 

FM120-M WILLAS THRU MMBTH10LT1 VHF/UHF Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. compliance with RoHS requirements. We declare that the material of product SOD-123H

 4.4. Size:1201K  shenzhen
 mmbth10lt1.pdf 

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBTH10LT1 TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation 2. 4 PCM 0.225 W (Tamb=25 ) 1. 3 Collector current ICM 0.05 A Collector-base voltage V(BR)CBO 30 V Operating and storage junction temperature range Unit mm TJ,