MMBTH10LT1G Datasheet. Specs and Replacement
Type Designator: MMBTH10LT1G 📄📄
SMD Transistor Code: 3EM.
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.004 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 650 MHz
Collector Capacitance (Cc): 0.7 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Package: SOT-23
MMBTH10LT1G Substitution
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MMBTH10LT1G datasheet
MMBTH10LT1G, NSVMMBTH10LT1G, MMBTH10LT3G, MMBTH10-4LT1G VHF/UHF Transistor http //onsemi.com NPN Silicon Features AEC-Q101 Qualified and PPAP Capable SOT-23 (TO-236) NSV Prefix for Automotive and Other Applications Requiring CASE 318 Unique Site and Control Change Requirements STYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant* ... See More ⇒
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MMBTH10L, MMBTH10-4L, SMMBTH10-4L, NSVMMBTH10L VHF/UHF Transistor www.onsemi.com NPN Silicon Features S and NSV Prefixes for Automotive and Other Applications SOT-23 (TO-236) Requiring Unique Site and Control Change Requirements; CASE 318 AEC-Q101 Qualified and PPAP Capable STYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 1 M... See More ⇒
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MMBTH10LT1G, NSVMMBTH10LT1G, MMBTH10LT3G, MMBTH10-4LT1G VHF/UHF Transistor http //onsemi.com NPN Silicon Features AEC-Q101 Qualified and PPAP Capable SOT-23 (TO-236) NSV Prefix for Automotive and Other Applications Requiring CASE 318 Unique Site and Control Change Requirements STYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant* ... See More ⇒
Detailed specifications: MMBTA56LT1G, MMBTA56WT1G, MMBTA63LT1G, MMBTA64LT1G, MMBTA70LT1G, MMBTA92-G, MMBTA92LT1G, MMBTH10-4LT1G, BD135, MMBTH10M3, MMBTH10W, MMDT3904V, MMDT3906V, MMDT8050S, MMDT8150, MMDTA06, MMJD2955
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