Биполярный транзистор BCR119W - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BCR119W
Маркировка: WKs
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 4.7 kOhm
Максимальная рассеиваемая мощность (Pc): 0.25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 150 MHz
Ёмкость коллекторного перехода (Cc): 3 pf
Статический коэффициент передачи тока (hfe): 120
Корпус транзистора: SOT-323
BCR119W Datasheet (PDF)
bcr119w.pdf
BCR 119WNPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=4.7k)Type Marking Ordering Code Pin Configuration PackageBCR 119W WKs Q62702-C2285 1 = B 2 = E 3 = C SOT-323Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-base voltage
bcr119w.pdf
BCR119...NPN silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in resistor (R1=4.7 k) BCR119S: Two internally isolated transistors with good matching in one multichip package BCR119S: For orientation in reel see package information below Pb-free (RoHS compliant) package1) Qualified according AEC Q101BCR
bcr119.pdf
BCR 119NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=4.7k)Type Marking Ordering Code Pin Configuration PackageBCR 119 WKs Q62702-C2255 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-base voltage VEB
bcr119s.pdf
BCR 119SNPN Silicon Digital Transistor Array Switching circuit, inverter, interface circuit, driver circuit Two (galvanic) internal isolated Transistors in one package Built bias resistor (R1=4.7k)Type Marking Ordering Code Pin Configuration PackageBCR 119S WKs Q62702-C2415 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363Maximum RatingsParameter Symbol Values UnitCollecto
bcr119f.pdf
BCR119...NPN silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in resistor (R1=4.7 k) BCR119S: Two internally isolated transistors with good matching in one multichip package BCR119S: For orientation in reel see package information below Pb-free (RoHS compliant) package1) Qualified according AEC Q101BCR
bcr119series.pdf
BCR119...NPN silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in resistor (R1=4.7 k) BCR119S: Two internally isolated transistors with good matching in one multichip package BCR119S: For orientation in reel see package information below Pb-free (RoHS compliant) package1) Qualified according AEC Q101BCR
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: ZTX312M
