Биполярный транзистор CHDTC623TKGP
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: CHDTC623TKGP
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 2.2 kOhm
Максимальная рассеиваемая мощность (Pc): 0.2
W
Макcимально допустимое напряжение коллектор-база (Ucb): 20
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 12
V
Макcимальный постоянный ток коллектора (Ic): 0.6
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 150
MHz
Статический коэффициент передачи тока (hfe): 820
Корпус транзистора:
SOT-23
Аналоги (замена) для CHDTC623TKGP
CHDTC623TKGP
Datasheet (PDF)
..1. Size:87K chenmko
chdtc623tkgp.pdf CHENMKO ENTERPRISE CO.,LTDCHDTC623TKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 20 Volts CURRENT 600 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* In addition to the features of regular digital transistor. VCE(sat)=40mV at IC/IB=50mA/2.5mA,makes these transistors ideal for
5.1. Size:88K chenmko
chdtc623tugp.pdf CHENMKO ENTERPRISE CO.,LTDCHDTC623TUGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 20 Volts CURRENT 600 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURESC-70/SOT-323* Small surface mounting type. (SC-70/SOT-323)* In addition to the features of regular digital transistor. VCE(sat)=40mV at IC/IB=50mA/2.5mA,makes these transist
8.1. Size:82K chenmko
chdtc643tugp.pdf CHENMKO ENTERPRISE CO.,LTDCHDTC643TUGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 20 Volts CURRENT 600 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURESC-70/SOT-323* Small surface mounting type. (SC-70/SOT-323)* In addition to the features of regular digital transistor. VCE(sat)=40mV at IC/IB=50mA/2.5mA,makes these transist
8.2. Size:153K chenmko
chdtc663ekgp.pdf CHENMKO ENTERPRISE CO.,LTDCHDTC663EUGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 20 Volts CURRENT 600 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23)SOT-23* In addition to the features of regular digital transistor. VCE(sat)=40mV at IC/IB=50mA/2.5mA,makes these transistors ideal fo
8.3. Size:68K chenmko
chdtc614tkgp.pdf CHENMKO ENTERPRISE CO.,LTDCHDTC614TKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 20 Volts CURRENT 600 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* In addition to the features of regular digital transistor. VCE(sat)=40mV at IC/IB=50mA/2.5mA,makes these transistors ideal for
8.4. Size:150K chenmko
chdtc663eugp.pdf CHENMKO ENTERPRISE CO.,LTDCHDTC663EUGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 20 Volts CURRENT 600 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURESC-70/SOT-323* Small surface mounting type. (SC-70/SOT-323)* In addition to the features of regular digital transistor. VCE(sat)=40mV at IC/IB=50mA/2.5mA,makes these transist
8.5. Size:77K chenmko
chdtc643tkgp.pdf CHENMKO ENTERPRISE CO.,LTDCHDTC643TKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 20 Volts CURRENT 600 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23)SOT-23* In addition to the features of regular digital transistor. VCE(sat)=40mV at IC/IB=50mA/2.5mA,makes these transistors ideal fo
8.6. Size:79K chenmko
chdtc614tugp.pdf CHENMKO ENTERPRISE CO.,LTDCHDTC614TUGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 20 Volts CURRENT 600 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURESC-70/SOT-323* Small surface mounting type. (SC-70/SOT-323)* In addition to the features of regular digital transistor. VCE(sat)=40mV at IC/IB=50mA/2.5mA,makes these transist
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