Биполярный транзистор 2S60 Даташит. Аналоги
Наименование производителя: 2S60
Тип материала: Ge
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.02 W
Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 18 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
Макcимальный постоянный ток коллектора (Ic): 0.005 A
Предельная температура PN-перехода (Tj): 75 °C
Граничная частота коэффициента передачи тока (ft): 20 MHz
Статический коэффициент передачи тока (hfe): 30
Корпус транзистора: TO44
Аналог (замена) для 2S60
2S60 Datasheet (PDF)
aot42s60.pdf

AOT42S60/AOB42S60TM600V 37A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT42S60 & AOB42S60 have been fabricated using IDM 166Athe advanced MOSTM high voltage process that isdesigned to deliver high levels of performance and RDS(ON),max 0.109robustness in switching applications. Qg,typ 40nCBy providing low RDS(on), Qg and EOSS alo
aot42s60l.pdf

AOT42S60/AOTF42S60TM600V 39A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT42S60 & AOTF42S60 have been fabricated IDM 166Ausing the advanced MOSTM high voltage process that isdesigned to deliver high levels of performance and RDS(ON),max 0.099robustness in switching applications. Qg,typ 40nCBy providing low RDS(on), Q
aotf42s60.pdf

AOTF42S60TM600V 39A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOTF42S60 have been fabricated using the IDM 166Aadvanced MOSTM high voltage process that is designedto deliver high levels of performance and robustness in RDS(ON),max 0.099switching applications. Qg,typ 40nCBy providing low RDS(on), Qg and EOSS along wit
aotf42s60l.pdf

AOTF42S60TM600V 39A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOTF42S60 have been fabricated using the IDM 166Aadvanced MOSTM high voltage process that is designedto deliver high levels of performance and robustness in RDS(ON),max 0.099switching applications. Qg,typ 40nCBy providing low RDS(on), Qg and EOSS along wit
Другие транзисторы... 2S52 , 2S53 , 2S54 , 2S56 , 2S56A , 2S57 , 2S58 , 2S59 , 100DA025D , 2S60A , 2S61 , 2S64 , 2S65 , 2S701 , 2S702 , 2S703 , 2S711 .
History: BC332B | 2SC1076 | K8050S-B | ET710 | SS8050 | BF263
History: BC332B | 2SC1076 | K8050S-B | ET710 | SS8050 | BF263



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