2S60 datasheet, аналоги, основные параметры
Наименование производителя: 2S60 📄📄
Тип материала: Ge
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.02 W
Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 18 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
Макcимальный постоянный ток коллектора (Ic): 0.005 A
Предельная температура PN-перехода (Tj): 75 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 20 MHz
Статический коэффициент передачи тока (hFE): 30
Корпус транзистора: TO44
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Аналоги (замена) для 2S60
- подборⓘ биполярного транзистора по параметрам
2S60 даташит
0.1. Size:302K aosemi
aot42s60.pdf 
AOT42S60/AOB42S60 TM 600V 37A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT42S60 & AOB42S60 have been fabricated using IDM 166A the advanced MOSTM high voltage process that is designed to deliver high levels of performance and RDS(ON),max 0.109 robustness in switching applications. Qg,typ 40nC By providing low RDS(on), Qg and EOSS alo
0.2. Size:335K aosemi
aot42s60l.pdf 
AOT42S60/AOTF42S60 TM 600V 39A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT42S60 & AOTF42S60 have been fabricated IDM 166A using the advanced MOSTM high voltage process that is designed to deliver high levels of performance and RDS(ON),max 0.099 robustness in switching applications. Qg,typ 40nC By providing low RDS(on), Q
0.3. Size:271K aosemi
aotf42s60.pdf 
AOTF42S60 TM 600V 39A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOTF42S60 have been fabricated using the IDM 166A advanced MOSTM high voltage process that is designed to deliver high levels of performance and robustness in RDS(ON),max 0.099 switching applications. Qg,typ 40nC By providing low RDS(on), Qg and EOSS along wit
0.4. Size:271K aosemi
aotf42s60l.pdf 
AOTF42S60 TM 600V 39A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOTF42S60 have been fabricated using the IDM 166A advanced MOSTM high voltage process that is designed to deliver high levels of performance and robustness in RDS(ON),max 0.099 switching applications. Qg,typ 40nC By providing low RDS(on), Qg and EOSS along wit
0.5. Size:302K aosemi
aob42s60.pdf 
AOT42S60/AOB42S60 TM 600V 37A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT42S60 & AOB42S60 have been fabricated using IDM 166A the advanced MOSTM high voltage process that is designed to deliver high levels of performance and RDS(ON),max 0.109 robustness in switching applications. Qg,typ 40nC By providing low RDS(on), Qg and EOSS alo
0.6. Size:524K aosemi
aot42s60l aob42s60l.pdf 
AOT42S60L/AOB42S60L TM 600V 37A a MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT42S60L & AOB42S60L have been fabricated IDM 166A using the advanced aMOSTM high voltage process that is designed to deliver high levels of performance and RDS(ON),max 0.109W robustness in switching applications. Qg,typ 40nC By providing low RDS(on), Qg and EOSS alo
0.7. Size:269K aosemi
aok42s60.pdf 
AOK42S60 TM 600V 39A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOK42S60 has been fabricated using the advanced MOSTM high voltage process that is designed to deliver IDM 166A high levels of performance and robustness in switching RDS(ON),max 0.099 applications. Qg,typ 40nC By providing low RDS(on), Qg and EOSS along with E
0.8. Size:269K aosemi
aok42s60l.pdf 
AOK42S60 TM 600V 39A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOK42S60 has been fabricated using the advanced MOSTM high voltage process that is designed to deliver IDM 166A high levels of performance and robustness in switching RDS(ON),max 0.099 applications. Qg,typ 40nC By providing low RDS(on), Qg and EOSS along with E
0.9. Size:245K inchange semiconductor
aot42s60.pdf 
isc N-Channel MOSFET Transistor AOT42S60 FEATURES Drain Current I = 37A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 109m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gen
0.10. Size:236K inchange semiconductor
aotf42s60.pdf 
isc N-Channel MOSFET Transistor AOTF42S60 FEATURES Drain Current I = 39A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 99m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gen
0.11. Size:236K inchange semiconductor
aotf42s60l.pdf 
isc N-Channel MOSFET Transistor AOTF42S60L FEATURES Drain Current I = 39A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 99m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and ge
0.12. Size:239K inchange semiconductor
aob42s60.pdf 
isc N-Channel MOSFET Transistor AOB42S60 FEATURES Drain Current I = 37A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 109m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gen
0.13. Size:362K inchange semiconductor
aok42s60l.pdf 
isc N-Channel MOSFET Transistor AOK42S60L FEATURES Drain Current I = 39A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 99m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gen
Другие транзисторы: 2S52, 2S53, 2S54, 2S56, 2S56A, 2S57, 2S58, 2S59, BC327, 2S60A, 2S61, 2S64, 2S65, 2S701, 2S702, 2S703, 2S711
