All Transistors. 2S60 Datasheet

 

2S60 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2S60

Material of Transistor: Ge

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.02 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 18 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.005 A

Max. Operating Junction Temperature (Tj): 75 °C

Transition Frequency (ft): 20 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO44-1

2S60 Transistor Equivalent Substitute - Cross-Reference Search

 

2S60 Datasheet (PDF)

1.1. aob42s60.pdf Size:302K _aosemi

2S60
2S60

AOT42S60/AOB42S60 TM 600V 37A α MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT42S60 & AOB42S60 have been fabricated using IDM 166A the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and RDS(ON),max 0.109Ω robustness in switching applications. Qg,typ 40nC By providing low RDS(on), Qg and EOSS alo

1.2. aok42s60l.pdf Size:269K _aosemi

2S60
2S60

AOK42S60 TM 600V 39A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 700V The AOK42S60 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver IDM 166A high levels of performance and robustness in switching RDS(ON),max 0.099Ω applications. Qg,typ 40nC By providing low RDS(on), Qg and EOSS along with E

 1.3. aot42s60.pdf Size:302K _aosemi

2S60
2S60

AOT42S60/AOB42S60 TM 600V 37A α MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT42S60 & AOB42S60 have been fabricated using IDM 166A the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and RDS(ON),max 0.109Ω robustness in switching applications. Qg,typ 40nC By providing low RDS(on), Qg and EOSS alo

1.4. aotf42s60l.pdf Size:271K _aosemi

2S60
2S60

AOTF42S60 TM 600V 39A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 700V The AOTF42S60 have been fabricated using the IDM 166A advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in RDS(ON),max 0.099Ω switching applications. Qg,typ 40nC By providing low RDS(on), Qg and EOSS along wit

 1.5. aot42s60l.pdf Size:335K _aosemi

2S60
2S60

AOT42S60/AOTF42S60 TM 600V 39A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 700V The AOT42S60 & AOTF42S60 have been fabricated IDM 166A using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and RDS(ON),max 0.099Ω robustness in switching applications. Qg,typ 40nC By providing low RDS(on), Q

1.6. aotf42s60.pdf Size:271K _aosemi

2S60
2S60

AOTF42S60 TM 600V 39A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 700V The AOTF42S60 have been fabricated using the IDM 166A advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in RDS(ON),max 0.099Ω switching applications. Qg,typ 40nC By providing low RDS(on), Qg and EOSS along wit

1.7. aok42s60.pdf Size:269K _aosemi

2S60
2S60

AOK42S60 TM 600V 39A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 700V The AOK42S60 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver IDM 166A high levels of performance and robustness in switching RDS(ON),max 0.099Ω applications. Qg,typ 40nC By providing low RDS(on), Qg and EOSS along with E

Datasheet: 2S52 , 2S53 , 2S54 , 2S56 , 2S56A , 2S57 , 2S58 , 2S59 , TIP122 , 2S60A , 2S61 , 2S64 , 2S65 , 2S701 , 2S702 , 2S703 , 2S711 .

Back to Top

 


2S60
  2S60
  2S60
 

social 

LIST

Last Update

BJT: US6H23 | UMH9NFHA | UMH8NFHA | UMH6NFHA | UMH5NFHA | UMH4NFHA | UMH3NFHA | UMH33N | UMH32N | UMH2NFHA | UMH1NFHA | UMH14NFHA | UMH14N | UMH11NFHA | UMH10NFHA | UMD9NFHA | UMD6NFHA | UMD5N | UMD4N | UMD3NFHA |