2S60 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2S60
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.02 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.005 A
Max. Operating Junction Temperature (Tj): 75 °C
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO44
2S60 Transistor Equivalent Substitute - Cross-Reference Search
2S60 Datasheet (PDF)
aot42s60.pdf
AOT42S60/AOB42S60TM600V 37A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT42S60 & AOB42S60 have been fabricated using IDM 166Athe advanced MOSTM high voltage process that isdesigned to deliver high levels of performance and RDS(ON),max 0.109robustness in switching applications. Qg,typ 40nCBy providing low RDS(on), Qg and EOSS alo
aot42s60l.pdf
AOT42S60/AOTF42S60TM600V 39A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT42S60 & AOTF42S60 have been fabricated IDM 166Ausing the advanced MOSTM high voltage process that isdesigned to deliver high levels of performance and RDS(ON),max 0.099robustness in switching applications. Qg,typ 40nCBy providing low RDS(on), Q
aotf42s60.pdf
AOTF42S60TM600V 39A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOTF42S60 have been fabricated using the IDM 166Aadvanced MOSTM high voltage process that is designedto deliver high levels of performance and robustness in RDS(ON),max 0.099switching applications. Qg,typ 40nCBy providing low RDS(on), Qg and EOSS along wit
aotf42s60l.pdf
AOTF42S60TM600V 39A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOTF42S60 have been fabricated using the IDM 166Aadvanced MOSTM high voltage process that is designedto deliver high levels of performance and robustness in RDS(ON),max 0.099switching applications. Qg,typ 40nCBy providing low RDS(on), Qg and EOSS along wit
aob42s60.pdf
AOT42S60/AOB42S60TM600V 37A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT42S60 & AOB42S60 have been fabricated using IDM 166Athe advanced MOSTM high voltage process that isdesigned to deliver high levels of performance and RDS(ON),max 0.109robustness in switching applications. Qg,typ 40nCBy providing low RDS(on), Qg and EOSS alo
aok42s60.pdf
AOK42S60TM600V 39A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOK42S60 has been fabricated using the advancedMOSTM high voltage process that is designed to deliver IDM 166Ahigh levels of performance and robustness in switching RDS(ON),max 0.099applications. Qg,typ 40nCBy providing low RDS(on), Qg and EOSS along with E
aok42s60l.pdf
AOK42S60TM600V 39A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOK42S60 has been fabricated using the advancedMOSTM high voltage process that is designed to deliver IDM 166Ahigh levels of performance and robustness in switching RDS(ON),max 0.099applications. Qg,typ 40nCBy providing low RDS(on), Qg and EOSS along with E
aot42s60.pdf
isc N-Channel MOSFET Transistor AOT42S60FEATURESDrain Current I = 37A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 109m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgen
aotf42s60.pdf
isc N-Channel MOSFET Transistor AOTF42S60FEATURESDrain Current I = 39A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 99m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgen
aotf42s60l.pdf
isc N-Channel MOSFET Transistor AOTF42S60LFEATURESDrain Current I = 39A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 99m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andge
aob42s60.pdf
isc N-Channel MOSFET Transistor AOB42S60FEATURESDrain Current I = 37A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 109m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgen
aok42s60l.pdf
isc N-Channel MOSFET Transistor AOK42S60LFEATURESDrain Current I = 39A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 99m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgen
Datasheet: 2S52 , 2S53 , 2S54 , 2S56 , 2S56A , 2S57 , 2S58 , 2S59 , BC557 , 2S60A , 2S61 , 2S64 , 2S65 , 2S701 , 2S702 , 2S703 , 2S711 .
