Биполярный транзистор DRA2113Z - описание производителя. Основные параметры. Даташиты.
Наименование производителя: DRA2113Z
Маркировка: L1
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 1 kOhm
Встроенный резистор цепи смещения R2 = 10 kOhm
Соотношение сопротивлений R1/R2 = 0.1
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 30
Корпус транзистора: MINI3-G3-B
DRA2113Z Datasheet (PDF)
dra2113z.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA2113ZSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC2113Z Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini3-G3-B Eco-friendly Halogen-free package Pin Name 1: Base
dra2114y.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA2114YSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC2114Y Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini3-G3-B Pin Name Eco-friendly Halogen-free package 1: Base
dra2114e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA2114ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC2114E Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini3-G3-B Eco-friendly Halogen-free package Pin Name 1: Base
dra2115t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA2115TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC2115T Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini3-G3-B Contributes to miniaturization of sets, reduction of component c
dra2114t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA2114TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC2114T Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini3-G3-B Contributes to miniaturization of sets, reduction of component c
dra2115e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA2115ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC2115E Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini3-G3-B Eco-friendly Halogen-free package Pin Name 1: Ba
dra2115g.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA2115GSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC2115G Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini3-G3-B Eco-friendly Halogen-free package Pin Name 1: Ba
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
BJT: 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050 | HSA1037AKS