DRA2113Z Datasheet. Specs and Replacement
Type Designator: DRA2113Z
SMD Transistor Code: L1
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 1 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 0.1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 30
Package: MINI3-G3-B
DRA2113Z Substitution
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DRA2113Z datasheet
This product complies with the RoHS Directive (EU 2002/95/EC). DRA2114Y Silicon PNP epitaxial planar type For digital circuits Complementary to DRC2114Y Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini3-G3-B Pin Name Eco-friendly Halogen-free package 1 Base ... See More ⇒
This product complies with the RoHS Directive (EU 2002/95/EC). DRA2114E Silicon PNP epitaxial planar type For digital circuits Complementary to DRC2114E Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini3-G3-B Eco-friendly Halogen-free package Pin Name 1 Base ... See More ⇒
This product complies with the RoHS Directive (EU 2002/95/EC). DRA2115T Silicon PNP epitaxial planar type For digital circuits Complementary to DRC2115T Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini3-G3-B Contributes to miniaturization of sets, reduction of component c... See More ⇒
Detailed specifications: DMG96405, DMG96406, DMG9640M, DMG9640N, DMG9640T, DMG964H1, DMG964H3, DMG964H5, BD335, DRA2114E, DRA2114T, DRA2114Y, DRA2115E, DRA2115G, DRA2115T, DRA2123E, DRA2123J
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