Биполярный транзистор DRA4152Z - описание производителя. Основные параметры. Даташиты.
Наименование производителя: DRA4152Z
Маркировка: L0
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 0.51 kOhm
Встроенный резистор цепи смещения R2 = 5.1 kOhm
Соотношение сопротивлений R1/R2 = 0.1
Максимальная рассеиваемая мощность (Pc): 0.3 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 20
Корпус транзистора: NS-B2-B-B
DRA4152Z Datasheet (PDF)
dra4152z.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA4152ZSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4152ZDRA2152Z in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-fr
dra4114e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA4114ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4114EDRA2114E in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free
dra4113z.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA4113ZSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4113ZDRA2113Z in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free
dra4143t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA4143TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4143TDRA2143T in NS through hole type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) NS-B2-B-B Contributes to miniat
dra4124t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA4124TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4124TDRA2124T in NS through hole type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) NS-B2-B-B Contributes to miniat
dra4143z.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA4143ZSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4143ZDRA2143Z in NS through hole type package Features Package High forward current transfer ratio hFE Code Low collector-emitter saturation voltage VCE(sat) NS-B2-B-B Contributes to miniaturization of sets, mount ar
dra4114t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA4114TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4114TDRA2114T in NS through hole type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) NS-B2-B-B Contributes to miniat
dra4124e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA4124ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4124EDRA2124E in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free p
dra4144t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA4144TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4144TDRA2144T in NS through hole type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) NS-B2-B-B Contributes to miniat
dra4123y.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA4123YSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4123YDRA2123Y in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free p
dra4143x.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA4143XSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4143XDRA2143X in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free p
dra4123j.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA4123JSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4123JDRA2123J in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free
dra4114y.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA4114YSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4114YDRA2114Y in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free
dra4144v.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA4144V (Tentative)Silicon PNP epitaxial planar typeFor digital circuits Packaging PackageRadial type: 5000 pcs / carton Code NS-B1-B Absolute Maximum Ratings Ta = 25C Pin NameParameter Symbol Rating Unit 1: Emitter 2: CollectorCollector-base voltage (Emitter open) VCBO 50 V 3: BaseC
dra4143e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA4143ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4143EDRA2143E in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free
dra4144e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA4144ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4144EDRA2144E in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free p
dra4144w.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA4144WSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4144WDRA2144W in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free p
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050