DRA4152Z datasheet, аналоги, основные параметры
Наименование производителя: DRA4152Z
Маркировка: L0
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 0.51 kOhm
Встроенный резистор цепи смещения R2 = 5.1 kOhm
Соотношение сопротивлений R1/R2 = 0.1
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.3 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Статический коэффициент передачи тока (hFE): 20
Корпус транзистора: NS-B2-B-B
Аналоги (замена) для DRA4152Z
- подборⓘ биполярного транзистора по параметрам
DRA4152Z даташит
..1. Size:224K panasonic
dra4152z.pdf 
This product complies with the RoHS Directive (EU 2002/95/EC). DRA4152Z Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4152Z DRA2152Z in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-fr
9.1. Size:348K panasonic
dra4114e.pdf 
This product complies with the RoHS Directive (EU 2002/95/EC). DRA4114E Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4114E DRA2114E in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free
9.2. Size:224K panasonic
dra4113z.pdf 
This product complies with the RoHS Directive (EU 2002/95/EC). DRA4113Z Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4113Z DRA2113Z in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free
9.3. Size:221K panasonic
dra4143t.pdf 
This product complies with the RoHS Directive (EU 2002/95/EC). DRA4143T Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4143T DRA2143T in NS through hole type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) NS-B2-B-B Contributes to miniat
9.4. Size:221K panasonic
dra4124t.pdf 
This product complies with the RoHS Directive (EU 2002/95/EC). DRA4124T Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4124T DRA2124T in NS through hole type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) NS-B2-B-B Contributes to miniat
9.5. Size:224K panasonic
dra4143z.pdf 
This product complies with the RoHS Directive (EU 2002/95/EC). DRA4143Z Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4143Z DRA2143Z in NS through hole type package Features Package High forward current transfer ratio hFE Code Low collector-emitter saturation voltage VCE(sat) NS-B2-B-B Contributes to miniaturization of sets, mount ar
9.6. Size:220K panasonic
dra4114t.pdf 
This product complies with the RoHS Directive (EU 2002/95/EC). DRA4114T Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4114T DRA2114T in NS through hole type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) NS-B2-B-B Contributes to miniat
9.7. Size:348K panasonic
dra4124e.pdf 
This product complies with the RoHS Directive (EU 2002/95/EC). DRA4124E Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4124E DRA2124E in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free p
9.8. Size:220K panasonic
dra4144t.pdf 
This product complies with the RoHS Directive (EU 2002/95/EC). DRA4144T Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4144T DRA2144T in NS through hole type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) NS-B2-B-B Contributes to miniat
9.9. Size:223K panasonic
dra4123y.pdf 
This product complies with the RoHS Directive (EU 2002/95/EC). DRA4123Y Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4123Y DRA2123Y in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free p
9.10. Size:224K panasonic
dra4143x.pdf 
This product complies with the RoHS Directive (EU 2002/95/EC). DRA4143X Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4143X DRA2143X in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free p
9.11. Size:223K panasonic
dra4123j.pdf 
This product complies with the RoHS Directive (EU 2002/95/EC). DRA4123J Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4123J DRA2123J in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free
9.12. Size:223K panasonic
dra4114y.pdf 
This product complies with the RoHS Directive (EU 2002/95/EC). DRA4114Y Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4114Y DRA2114Y in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free
9.13. Size:190K panasonic
dra4144v.pdf 
This product complies with the RoHS Directive (EU 2002/95/EC). DRA4144V (Tentative) Silicon PNP epitaxial planar type For digital circuits Packaging Package Radial type 5000 pcs / carton Code NS-B1-B Absolute Maximum Ratings Ta = 25 C Pin Name Parameter Symbol Rating Unit 1 Emitter 2 Collector Collector-base voltage (Emitter open) VCBO 50 V 3 Base C
9.14. Size:346K panasonic
dra4143e.pdf 
This product complies with the RoHS Directive (EU 2002/95/EC). DRA4143E Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4143E DRA2143E in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free
9.15. Size:350K panasonic
dra4144e.pdf 
This product complies with the RoHS Directive (EU 2002/95/EC). DRA4144E Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4144E DRA2144E in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free p
9.16. Size:223K panasonic
dra4144w.pdf 
This product complies with the RoHS Directive (EU 2002/95/EC). DRA4144W Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4144W DRA2144W in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free p
Другие транзисторы: DRA4143E, DRA4143T, DRA4143X, DRA4143Z, DRA4144E, DRA4144T, DRA4144V, DRA4144W, BC557, DRA4514E, DRA4523E, DRA4523Y, DRA4543E, DRA5113Z, DRA5114E, DRA5114T, DRA5114Y
