DRA4152Z Datasheet. Specs and Replacement

Type Designator: DRA4152Z

SMD Transistor Code: L0

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 0.51 kOhm

Built in Bias Resistor R2 = 5.1 kOhm

Typical Resistor Ratio R1/R2 = 0.1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: NS-B2-B-B

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DRA4152Z datasheet

 ..1. Size:224K  panasonic

dra4152z.pdf pdf_icon

DRA4152Z

This product complies with the RoHS Directive (EU 2002/95/EC). DRA4152Z Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4152Z DRA2152Z in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-fr... See More ⇒

 9.1. Size:348K  panasonic

dra4114e.pdf pdf_icon

DRA4152Z

This product complies with the RoHS Directive (EU 2002/95/EC). DRA4114E Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4114E DRA2114E in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free... See More ⇒

 9.2. Size:224K  panasonic

dra4113z.pdf pdf_icon

DRA4152Z

This product complies with the RoHS Directive (EU 2002/95/EC). DRA4113Z Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4113Z DRA2113Z in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free... See More ⇒

 9.3. Size:221K  panasonic

dra4143t.pdf pdf_icon

DRA4152Z

This product complies with the RoHS Directive (EU 2002/95/EC). DRA4143T Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4143T DRA2143T in NS through hole type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) NS-B2-B-B Contributes to miniat... See More ⇒

Detailed specifications: DRA4143E, DRA4143T, DRA4143X, DRA4143Z, DRA4144E, DRA4144T, DRA4144V, DRA4144W, BC557, DRA4514E, DRA4523E, DRA4523Y, DRA4543E, DRA5113Z, DRA5114E, DRA5114T, DRA5114Y

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