Биполярный транзистор DRA5124E - описание производителя. Основные параметры. Даташиты.
Наименование производителя: DRA5124E
Маркировка: LE
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 22 kOhm
Встроенный резистор цепи смещения R2 = 22 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 60
Корпус транзистора: SMINI3-F2-B
DRA5124E Datasheet (PDF)
dra5124e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA5124ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC5124EDRA2124E in SMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini3-F2-B Eco-friendly Halogen-fr
dra5124x.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA5124XSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC5124XDRA2124X in SMini3 type package Features Package High forward current transfer ratio hFE Code Low collector-emitter saturation voltage VCE(sat) SMini3-F2-B Contributes to miniaturization of sets, reduction of
dra5124t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA5124TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC5124TDRA2124T in SMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini3-F2-B Contributes to miniaturization
dra5123e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA5123ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC5123EDRA2123E in SMini3 type package Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package SMini3-F2-B Pin Name Packaging 1: BaseEmb
dra5123j.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA5123JSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC5123JDRA2123J in SMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini3-F2-B Eco-friendly Halogen-
dra5123y.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA5123YSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC5123YDRA2123Y in SMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini3-F2-B Eco-friendly Halogen-fr
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050