Биполярный транзистор DRA9115E - описание производителя. Основные параметры. Даташиты.
Наименование производителя: DRA9115E
Маркировка: LN
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 100 kOhm
Встроенный резистор цепи смещения R2 = 100 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.125 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 80
Корпус транзистора: SSMINI3-F3-B
DRA9115E Datasheet (PDF)
dra9115e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA9115ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC9115EDRA5115E in SSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini3-F3-B Eco-friendly Halogen-fr
dra9115t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA9115TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC9115TDRA5115T in SSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SSMini3-F3-B Contributes to miniaturiza
dra9115g.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA9115GSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC9115GDRA5115G in SSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini3-F3-B Eco-friendly Haloge
dra9114t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA9114TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC9114TDRA5114T in SSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SSMini3-F3-B Contributes to miniaturizati
dra9113z.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA9113ZSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC9113ZDRA5113Z in SSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini3-F3-B Eco-friendly Halogen-fr
dra9114y.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA9114YSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC9114YDRA5114Y in SSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini3-F3-B Eco-friendly Halogen-fr
dra9114e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA9114ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC9114EDRA5114E in SSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini3-F3-B Eco-friendly Halogen-
Другие транзисторы... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050
