All Transistors. DRA9115E Datasheet

 

DRA9115E Datasheet and Replacement


   Type Designator: DRA9115E
   SMD Transistor Code: LN
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 100 kOhm
   Built in Bias Resistor R2 = 100 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.125 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SSMINI3-F3-B
 

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DRA9115E Datasheet (PDF)

 ..1. Size:416K  panasonic
 dra9115e.pdf pdf_icon

DRA9115E

This product complies with the RoHS Directive (EU 2002/95/EC).DRA9115ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC9115EDRA5115E in SSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini3-F3-B Eco-friendly Halogen-fr

 7.1. Size:413K  panasonic
 dra9115t.pdf pdf_icon

DRA9115E

This product complies with the RoHS Directive (EU 2002/95/EC).DRA9115TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC9115TDRA5115T in SSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SSMini3-F3-B Contributes to miniaturiza

 7.2. Size:406K  panasonic
 dra9115g.pdf pdf_icon

DRA9115E

This product complies with the RoHS Directive (EU 2002/95/EC).DRA9115GSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC9115GDRA5115G in SSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini3-F3-B Eco-friendly Haloge

 8.1. Size:410K  panasonic
 dra9114t.pdf pdf_icon

DRA9115E

This product complies with the RoHS Directive (EU 2002/95/EC).DRA9114TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC9114TDRA5114T in SSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SSMini3-F3-B Contributes to miniaturizati

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Datasheet: DRA5A43Z , DRA5A44E , DRA5A44W , DRA5L14Y , DRA9113Z , DRA9114E , DRA9114T , DRA9114Y , 2SC2383Y , DRA9115G , DRA9115T , DRA9123E , DRA9123J , DRA9123Y , DRA9124E , DRA9124T , DRA9124X .

History: AF201

Keywords - DRA9115E transistor datasheet

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