2SA1006 datasheet, аналоги, основные параметры
Наименование производителя: 2SA1006 📄📄
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 180 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 180 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 1.5 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 80 MHz
Ёмкость коллекторного перехода (Cc): 45 pf
Статический коэффициент передачи тока (hFE): 120
Корпус транзистора: TO220
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2SA1006 даташит
..2. Size:199K jmnic
2sa1006 2sa1006a 2sa1006b.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA1006 2SA1006A 2SA1006B DESCRIPTION With TO-220 package Complement to type 2SC2336, 2SC2336A,2SC2336B APPLICATIONS Audio frequency power amplifier High frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3
..4. Size:124K inchange semiconductor
2sa1006 2sa1006a 2sa1006b.pdf 
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1006 2SA1006A 2SA1006B DESCRIPTION With TO-220 package Complement to type 2SC2336, 2SC2336A,2SC2336B APPLICATIONS Audio frequency power amplifier High frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-22
0.1. Size:207K inchange semiconductor
2sa1006a.pdf 
isc Silicon PNP Power Transistor 2SA1006A DESCRIPTION Good Linearity of h FE High Collector-Emitter Breakdown Voltage- V = -200V(Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SC2336A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Adudio frequency power amplifier High frequency power amplifier ABSOLUTE
0.2. Size:327K inchange semiconductor
2sa1006b.pdf 
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1006B DESCRIPTION Good Linearity of h FE High Collector-Emitter Breakdown Voltage- V = -250Vdc (Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SC2336B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Adudio frequency power amplifier High frequency p
8.1. Size:109K nec
2sa1008.pdf 
DATA SHEET SILICON POWER TRANSISTOR 2SA1008 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1008 is a mold power transistor developed for high-speed ORDERING INFORMATION switching, and is ideal for use as a driver in devices such as switching Part No. Package regulators, DC/DC converters, and high-frequency power amplifiers. 2SA1008 TO-220AB FEATURES (TO-220AB)
8.4. Size:216K jmnic
2sa1008.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA1008 DESCRIPTION With TO-220 package Complement to type 2SC2331 Low collector saturation voltage Fast switching speed APPLICATIONS Switching regulators DC/DC converters High frequency power amplifiers PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplifie
8.5. Size:195K inchange semiconductor
2sa1007.pdf 
isc Silicon PNP Power Transistor 2SA1007 DESCRIPTION High Current Capability Collector-Emitter Breakdown Voltage- V = -150V(Min.) (BR)CEO Complement to Type 2SC2337 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU
8.6. Size:194K inchange semiconductor
2sa1003.pdf 
isc Silicon PNP Power Transistor 2SA1003 DESCRIPTION High Current Capability Collector-Emitter Breakdown Voltage- V = -150V(Min.) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volta
8.7. Size:208K inchange semiconductor
2sa1008.pdf 
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1008 DESCRIPTION Low Collector Saturation Voltage- V = -0.6V(Max.)@ I = -1A CE(sat) C Fast Switching Speed Complement to Type 2SC2331 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as a driver in devices such as switching regulators, DC/DC converte
8.8. Size:217K inchange semiconductor
2sa1009.pdf 
isc Silicon PNP Power Transistor 2SA1009 DESCRIPTION Low Collector Saturation Voltage- VCE(sat)= -1V(Max.)@ IC= -0.3A Fast Switching Speed Wide Reverse Bias Safe Operating Area 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulators, DC/DC converters and High frequency power
8.9. Size:216K inchange semiconductor
2sa1009a.pdf 
isc Silicon PNP Power Transistor 2SA1009A DESCRIPTION Low Collector Saturation Voltage- VCE(sat)= -1V(Max.)@ IC= -0.3A Fast Switching Speed Wide Reverse Bias Safe Operating Area Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulators, DC/DC converters and High frequency power amplifier application.
8.10. Size:195K inchange semiconductor
2sa1001.pdf 
isc Silicon PNP Power Transistor 2SA1001 DESCRIPTION High Current Capability Collector-Emitter Breakdown Voltage- V = -130V(Min.) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volta
8.11. Size:193K inchange semiconductor
2sa1002.pdf 
isc Silicon PNP Power Transistor 2SA1002 DESCRIPTION High Current Capability Collector-Emitter Breakdown Voltage- V = -120V(Min.) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volta
Другие транзисторы: 2S98, 2S99, 2SA100, 2SA1001, 2SA1002, 2SA1003, 2SA1004, 2SA1005, 2N4401, 2SA1006A, 2SA1006B, 2SA1007, 2SA1007A, 2SA1008, 2SA1009, 2SA1009A, 2SA101
