Биполярный транзистор 2SA1006 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SA1006
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 180 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 180 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 1.5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 80 MHz
Ёмкость коллекторного перехода (Cc): 45 pf
Статический коэффициент передачи тока (hfe): 120
Корпус транзистора: TO220
2SA1006 Datasheet (PDF)
2sa1006-a-b 2sc2336-a-b 2sa1006 2sa1006a 2sa1006b 2sc2336 2sc2336a2sc2336b 1.pdf
This Material Copyrighted By Its Respective Manufacturer
2sa1006 2sa1006a 2sa1006b.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1006 2SA1006A 2SA1006B DESCRIPTION With TO-220 package Complement to type 2SC2336, 2SC2336A,2SC2336B APPLICATIONS Audio frequency power amplifier High frequency power amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3
2sa1006 2sa1006a 2sa1006b.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1006 2SA1006A 2SA1006B DESCRIPTION With TO-220 package Complement to type 2SC2336, 2SC2336A,2SC2336B APPLICATIONS Audio frequency power amplifier High frequency power amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-22
2sa1006a.pdf
isc Silicon PNP Power Transistor 2SA1006ADESCRIPTIONGood Linearity of hFEHigh Collector-Emitter Breakdown Voltage-: V = -200V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SC2336AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAdudio frequency power amplifierHigh frequency power amplifierABSOLUTE
2sa1006b.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1006BDESCRIPTIONGood Linearity of hFEHigh Collector-Emitter Breakdown Voltage-V = -250Vdc (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SC2336BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAdudio frequency power amplifierHigh frequency p
2sa1008.pdf
DATA SHEETSILICON POWER TRANSISTOR2SA1008PNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1008 is a mold power transistor developed for high-speed ORDERING INFORMATIONswitching, and is ideal for use as a driver in devices such as switchingPart No. Packageregulators, DC/DC converters, and high-frequency power amplifiers.2SA1008 TO-220ABFEATURES(TO-220AB)
2sa1008.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1008 DESCRIPTION With TO-220 package Complement to type 2SC2331 Low collector saturation voltage Fast switching speed APPLICATIONS Switching regulators DC/DC converters High frequency power amplifiers PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplifie
2sa1007.pdf
isc Silicon PNP Power Transistor 2SA1007DESCRIPTIONHigh Current CapabilityCollector-Emitter Breakdown Voltage-: V = -150V(Min.)(BR)CEOComplement to Type 2SC2337Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU
2sa1003.pdf
isc Silicon PNP Power Transistor 2SA1003DESCRIPTIONHigh Current CapabilityCollector-Emitter Breakdown Voltage-: V = -150V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volta
2sa1008.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1008DESCRIPTIONLow Collector Saturation Voltage-: V = -0.6V(Max.)@ I = -1ACE(sat) CFast Switching SpeedComplement to Type 2SC2331Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as a driver in devices such as switchingregulators, DC/DC converte
2sa1009.pdf
isc Silicon PNP Power Transistor 2SA1009DESCRIPTIONLow Collector Saturation Voltage-: VCE(sat)= -1V(Max.)@ IC= -0.3AFast Switching SpeedWide Reverse Bias Safe Operating Area100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulators, DC/DC converters andHigh frequency power
2sa1009a.pdf
isc Silicon PNP Power Transistor 2SA1009ADESCRIPTIONLow Collector Saturation Voltage-: VCE(sat)= -1V(Max.)@ IC= -0.3AFast Switching SpeedWide Reverse Bias Safe Operating AreaMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulators, DC/DC converters andHigh frequency power amplifier application.
2sa1001.pdf
isc Silicon PNP Power Transistor 2SA1001DESCRIPTIONHigh Current CapabilityCollector-Emitter Breakdown Voltage-: V = -130V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volta
2sa1002.pdf
isc Silicon PNP Power Transistor 2SA1002DESCRIPTIONHigh Current CapabilityCollector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volta
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
