Spec. No. : C252N3 Issued Date : 2003.05.27 CYStech Electronics Corp.Revised Date :2011.01.24 Page No. : 1/6 PNP Digital Transistors (Built-in Resistors) DTA114EN3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors wit

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTA114EUPNP resistor-equipped transistor1999 Apr 13Product specificationSupersedes data of 1998 May 18Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA114EUFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3handbook, 4 columns Simplification of circuit design

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTA114EEFPNP resistor-equipped transistor1999 May 21Preliminary specificationSupersedes data of 1998 Nov 11Philips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA114EEFFEATURES PINNING Power dissipation comparable to SOT23PIN DESCRIPTION Built-in bias resistors R1 and R2 (typ. 10 k each)1

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTA114ESPNP resistor-equipped transistor1998 May 18Product specificationSupersedes data of 1997 Jul 02File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA114ESFEATURES Built-in bias resistorsR1 and R2 (typ. 10 k each) Simplification o

DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D114PDTA114EKPNP resistor-equipped transistor1998 May 19Product specificationSupersedes data of 1997 Jul 04File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA114EKFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3 Simplific

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA114EEPNP resistor-equipped transistorPreliminary specification 1998 Jul 23Supersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA114EEFEATURES Built-in bias resistors R1 and R2(typ. 10 k each) Simplification of circuit

DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088PDTA114ETPNP resistor-equipped transistor1999 Apr 13Product specificationSupersedes data of 1998 May 15Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA114ETFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3 Simplification of circuit design handbook, 4 columns3

DISCRETE SEMICONDUCTORS DATA SHEETPDTA114E seriesPNP resistor-equipped transistors; R1 = 10 k, R2 = 10 kProduct data sheet 2004 Aug 02Supersedes data of 2003 Apr 10NXP Semiconductors Product data sheetPNP resistor-equipped transistors; PDTA114E seriesR1 = 10 k, R2 = 10 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTA114EUPNP resistor-equipped transistor1999 Apr 13Product specificationSupersedes data of 1998 May 18Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA114EUFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3handbook, 4 columns Simplification of circuit design

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTA114EEFPNP resistor-equipped transistor1999 May 21Preliminary specificationSupersedes data of 1998 Nov 11Philips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA114EEFFEATURES PINNING Power dissipation comparable to SOT23PIN DESCRIPTION Built-in bias resistors R1 and R2 (typ. 10 k each)1

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTA114ESPNP resistor-equipped transistor1998 May 18Product specificationSupersedes data of 1997 Jul 02File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA114ESFEATURES Built-in bias resistorsR1 and R2 (typ. 10 k each) Simplification o

DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D114PDTA114EKPNP resistor-equipped transistor1998 May 19Product specificationSupersedes data of 1997 Jul 04File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA114EKFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3 Simplific

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA114EEPNP resistor-equipped transistorPreliminary specification 1998 Jul 23Supersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA114EEFEATURES Built-in bias resistors R1 and R2(typ. 10 k each) Simplification of circuit

DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088PDTA114ETPNP resistor-equipped transistor1999 Apr 13Product specificationSupersedes data of 1998 May 15Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA114ETFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3 Simplification of circuit design handbook, 4 columns3

PDTA143/114/124/144EQA series50 V, 100 mA PNP resistor-equipped transistorsRev. 1 18 December 2015 Product data sheet1. Product profile1.1 General description100 mA PNP Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.Table 1. Product overviewType nu

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

100mA / 50V Digital transistors (with built-in resistors) DTA114EEB Applications Dimensions (Unit : mm) Inverter, Interface, Driver EMT3F1.6 0.70.26 Features (3)1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors (1) (2)

DTA114E seriesDatasheetPNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCC-50VIC(MAX.)-100mA R110kDTA114EM DTA114EEBR2 (SC-105AA) (SC-89)10k EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistors, R1 = R2 = 10k 2) Built-in bias resistors enable the configuration

100mA / 50V Digital transistors (with built-in resistors) DTA114EB / DTA114EM / DTA114EE / DTA114EUA / DTA114EKA Applications Inverter, Interface, Driver Features1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isola

-100mA / -50V Digital transistors (with built-in resistors) DTA114EUB Applications Dimensions (Unit : mm) Inverter, Interface, Driver UMT3F2.0 0.90.32 Features (3)1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). (1) (2)2) The bias resistors consist of thin-film resisto

100mA / 50V Digital transistors (with built-in resistors) DTA114EM / DTA114EE / DTA114EUA / DTA114EKA Applications Inverter, Interface, Driver Features1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to

DTA114EM / DTA114EE / DTA114EUA Transistors DTA114EKA / DTA114ESA -100mA / -50V Digital transistors (with built-in resistors) DTA114EM / DTA114EE / DTA114EUA / DTA114EKA / DTA114ESA Applications Inverter, Interface, Driver Features1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit)

DDTA (R1 = R2 SERIES) UA PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-323 Complementary NPN Types Available (DDTC) Dim Min Max Built-In Biasing Resistors, R1 = R2 A 0.25 0.40 Lead Free/RoHS Compliant (Note 2) B CB 1.15 1.35 "Green" Device, Note 3 and 4 C 2.00 2.20 Mechanical Data D 0.65 N

DDTA (R1 = R2 SERIES) EDDTA (R1 = R2 SERIES) E PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-523 Complementary NPN Types Available (DDTC) Dim Min Max Typ Built-In Biasing Resistors, R1 = R2 A 0.15 0.30 0.22 Lead Free/RoHS Compliant (Note 2) TOP VIEW B C B 0.75 0.85 0.80 "Green" Device (Note 3 and 4)

DDTA (R1 = R2 SERIES) KA PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SC-59 A Complementary NPN Types Available (DDTC) Dim Min Max Built-In Biasing Resistors, R1 = R2 A 0.35 0.50 Lead Free/RoHS Compliant (Note 2) B 1.50 1.70 "Green" Device, Note 3 and 4 B CC 2.70 3.00 Mechanical Data D 0.95

DDTA (R1 = R2 SERIES) CAPNP PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTORFeatures Mechanical Data Epitaxial Planar Die Construction Case: SOT23 Complementary NPN Types Available (DDTC) Case material: Molded Plastic. Green Molding Compound. Built-In Biasing Resistors, R1 = R2 Classification Rating 94V-0 Lead Free, RoHS Compliant (Note

DDTA (R1 = R2 SERIES) CA PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case: SOT23 Complementary NPN Types Available (DDTC) Case Material: Molded Plastic, Green Molding Compound Built-In Biasing Resistors, R1 R2 UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully R

MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth DTA114EUAMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating PNP Moisure Sensitivity Level 1Digital Transistors Built-i

MUN2111, MMUN2111L,MUN5111, DTA114EE,DTA114EM3, NSBA114EF3Digital Transistors (BRT)R1 = 10 kW, R2 = 10 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (

DTA114EET1 SeriesPreferred DevicesBias Resistor TransistorsPNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlehttp://onsemi.comdevice and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monolithic biasnetwork consisting of two r

DTA114EET1 SERIESPreferred DevicesBias Resistor TransistorPNP Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias Resistorhttp://onsemi.comTransistor) contains a single transistor with a monolithic bias networkconsisting of two res

MUN2111, MMUN2111L,MUN5111, DTA114EE,DTA114EM3, NSBA114EF3Digital Transistors (BRT)R1 = 10 kW, R2 = 10 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (

DTA114EXV3T1 SeriesPreferred DevicesDigital Transistors (BRT)PNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The digital transistorhttp://onsemi.comcontains a single transistor with a monolithic bias network consistingof two resistors;

MUN2111, MMUN2111L,MUN5111, DTA114EE,DTA114EM3, NSBA114EF3Digital Transistors (BRT)R1 = 10 kW, R2 = 10 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (

DTA114EM3T5G SeriesPreferred DevicesDigital Transistors (BRT)PNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The digital transistorhttp://onsemi.comcontains a single transistor with a monolithic bias network consistingof two resistors;

DTA114EM3T5G SeriesPreferred DevicesDigital Transistors (BRT)PNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The digital transistorhttp://onsemi.comcontains a single transistor with a monolithic bias network consistingof two resistors;

DTA114EET1 Series,SDTA114EET1 SeriesPreferred DevicesBias Resistor TransistorsPNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor Networkhttp://onsemi.comThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monolithic bias PNP SIL

UNISONIC TECHNOLOGIES CO., LTD DTA114E PNP SILICON TRANSISTOR DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) 11 FEATURES TO-92SPTO-92* Built-in Bias Resistors that Implies Easy ON/OFF Applications. * The Bias Resistors are Thin-Film Resistors with Complete Isolation 333to Allow Positive Input. EQUIVALENT CIRCUIT 111222SOT-23 SOT-323 SOT-523 ORDER

DT A114EE/DTA114EUA/DTA114EKA /DTA114ESA/DTA114ECA Digital transistors (PNP)FEATURES 1. Built-in bias resistors enable the configuration of an inverter circuitwithout connecting external input resistors(see equivalent circuit). 2. The bias resistors consist of thin-film resistors with complete isolationto allow positive biasing of the input.They also have the advantage ofalmost co

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GMDTA114EDESCRIPTION&EQUIVALENT CIRCUITDESCRIPTION&EQUIVALENT CIRCUIT DESCRIPTION&EQUIVALENT CIRCUITPNP DIGITAL TRANSISTOR(BUILT-IN RESISTORS)()MAXIMUM RATIN

DTA114EM SeriesBias Resistor Transistor PNP Silicon3P b Lead(Pb)-FreeCOLLECTOR132R11R2BASESOT-7232EMITTERMaximum Ratings (TA=25C unless otherwise noted)Rating Symbol Value UnitCollector-Base Voltage VCBO V50VCEOCollector-Emitter Voltage 50 VmAIC 100Collector Current-ContinuousThermal CharacteristicsCharacteristics Symbol Max UnitTotal Device

DTA114EE SeriesBias Resistor Transistor PNP Silicon33P b Lead(Pb)-FreeCOLLECTOR123R11R2BASESC-89(SOT-523F)2EMITTERMaximum Ratings (TA=25C unless otherwise noted)Rating Symbol Value UnitCollector-Emitter Voltage 50 VVCEOVCBO VCollector-Base Voltage 50mAIC 100Collector Current-ContinuousThermal CharacteristicsCharacteristics Symbol Max Unit

FM120-MWILLASTHRUDTA114EUAPNP Digital TransistorFM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProduPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize board space

FM120-M WILLASDTA114ECATHRUPNP Digital Transistor FM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProducPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize board spac

FM120-M WILLASTHRUDTA114EEPNP Digital Transistor FM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProduPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize board spac

Spec. No. : C252A3 Issued Date : 2003.09.29 CYStech Electronics Corp. Revised Date : Page No. : 1/6 PNP Digital Transistors (Built-in Resistors) DTA114EA3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors with complet

Spec. No. : C252B3 Issued Date : 2008.04.28 CYStech Electronics Corp.Revised Date : Page No. : 1/5 PNP Digital Transistors (Built-in Resistors) DTA114EB3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors with complete

Spec. No. : C252S3 Issued Date : 2003.06.12 CYStech Electronics Corp. Revised Date : Page No. : 1/4 PNP Digital Transistors (Built-in Resistors) DTA114ES3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors with complet

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsLDTC114EET1G SeriesS-LDTC114EET1G SeriesNPN Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkcons

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsLDTA114EET1G SeriesPNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkconsisting of two resistors

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsPNP Silicon Surface Mount TransistorsLDTA114EM3T5GWith Monolithic Bias Resistor NetworkSeriesThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias Resistor3Transistor) contains a single transistor with a monolithic bias networkconsisting of two resi

SEMICONDUCTORDTA114ETECHNICAL DATABias Resistor TransistorPNP Silicon Surface Mount TransistorBwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a single Kdevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkDIM MILLIMETERSA 3.25 MAXresi

SMD Type TransistorsDigital TransistorsDTA114EUA (KDTA114EUA) Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.They also have the advantage of almost complet

SMD Type TransistorsDigital TransistorsDTA114ECA (KDTA114ECA)SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.1 Features 3 Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit) The bias resistors consist of thin-film resistors with complete 1 2+0.1+0.050.95 -0.1 0.1-0.01 isolation

SMD Type TransistorsDigital TransistorsDTA114EM (KDTA114EM)SOT-723 Unit:mm Features1 Built-in bias resistors enable the configuration of an inverter circuit3 without connecting external input resistors(see equivalent circuit) 2 The bias resistors consist of thin-film resistors with complete0.80 0.05 isolation to allow positive biasing of the input.They also h

DIP Type TransistorsDigital TransistorsDTA114ESA (KDTA114ESA)TO-92SUnit:mm4.00.12.480.245 TYP Features Built-in bias resistors enable the configuration of an inverter circuit0.48 (max)0.35 (min ) without connecting external input resistors(see equivalent circuit) The bias resistors consist of thin-film resistors with complete21 30.55 (max) isol

SMD Type TransistorsDigital TransistorsDTA114EE (KDTA114EE )SOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.05 Features Built-in bias resistors enable the configuration of an inverter circuit2 1 without connecting external input resistors(see equivalent circuit) The bias resistors consist of thin-film resistors with complete isolatio

CHENMKO ENTERPRISE CO.,LTDCHDTA114EKGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 50 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabili

CHENMKO ENTERPRISE CO.,LTDCHDTA114EEGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 50 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation cu

CHENMKO ENTERPRISE CO.,LTDCHDTA114EUGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 50 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURESC-70/SOT-323* Small surface mounting type. (SC-70/SOT-323)* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation c