2SA1010 - описание и поиск аналогов

DATA SHEET SILICON POWER TRANSISTOR 2SA1010 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING The 2SA1010 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) voltage high-speed switching, and is ideal for use as a driver in devices such as switching regulators, DC/DC converters, and high- frequency power amplifiers. FEATURES Low collector

Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA1010 DESCRIPTION With TO-220 package Complement to type 2SC2334 Low collector saturation voltage Fast switching speed APPLICATIONS Switching regulators DC/DC converters High frequency power amplifiers PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 si

isc Silicon PNP Power Transistor 2SA1010 DESCRIPTION Low Collector Saturation Voltage Fast Switching Speed Complement to Type 2SC2334 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switching reg- lators, DC/DC converters, and h

2SA1015 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015 Audio Frequency General Purpose Amplifier Applications Unit mm Driver Stage Amplifier Applications High voltage and high current VCEO = -50 V (min), I = -150 mA (max) C Excellent h linearity h = 80 (typ.) at V = -6 V, I = -150 mA FE FE (2) CE C hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95

2SA1015(L) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Unit mm Low Noise Amplifier Applications High voltage and high current VCEO = -50 V (min), I = -150 mA (max) C Excellent h linearity h (2) = 80 (typ.) at V = -6 V, I = -150 mA FE FE CE C hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.)

Ordering number ENN572E PNP/NPN Epitaxial Planar Silicon Transistors 2SA1016, 1016K/2SC2362, 2362K High-Voltage Low-Noise Amp Applications Package Dimensions unit mm 2003B [2SA1016, 1016K/2SC2362, 2362K] 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 2 3 1 Emitter ( ) 2SA1016, 1016K 2 Collecor 3 Base Specifications 1.3 1.3 SANYO NP Absolute Maximum Ratings at Ta = 25 C 2SA101

Ordering number ENN544G PNP/NPN Epitaxial Planar Silicon Transistors 2SA1011/2SC2344 High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications Package Dimensions unit mm 2010C [2SA1011/2SC2344] 10.2 4.5 3.6 5.1 1.3 1.2 0.8 0.4 1 2 3 1 Base ( ) 2SA1011 2 Collector 3 Emitter 2.55 2.55 Specifications SANYO TO220AB Absolute Maximum Ratings at Ta = 2

MCC Micro Commercial Components TM 2SA1013-R 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1013-O Phone (818) 701-4933 Fax (818) 701-4939 2SA1013-Y Features Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information) Capable of 0.9Watts of Power Dissipation. PNP Collector-current -1.0A Epitaxial Sili

2SA1015-O MCC Micro Commercial Components TM 2SA1015-Y 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1015-GR Phone (818) 701-4933 Fax (818) 701-4939 Features Capable of 0.4Watts of Power Dissipation. PNP Silicon Collector-current 0.15A Collector-base Voltage 50V Plastic-Encapsulate Operating and storage junction temperature range -

MCC Micro Commercial Components TM 2SA1013-R 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1013-O Phone (818) 701-4933 Fax (818) 701-4939 2SA1013-Y Features Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information) Capable of 0.9Watts of Power Dissipation. PNP Collector-current -1.0A Epitaxial Sili

2SA1015-O MCC Micro Commercial Components TM 2SA1015-Y 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1015-GR Phone (818) 701-4933 Fax (818) 701-4939 Features Capable of 0.4Watts of Power Dissipation. PNP Silicon Collector-current 0.15A Collector-base Voltage 50V Plastic-Encapsulate Operating and storage junction temperature range -

2SA1015-O MCC Micro Commercial Components TM 2SA1015-Y 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1015-GR Phone (818) 701-4933 Fax (818) 701-4939 Features Capable of 0.4Watts of Power Dissipation. PNP Silicon Collector-current 0.15A Collector-base Voltage 50V Plastic-Encapsulate Operating and storage junction temperature range -

MCC Micro Commercial Components TM 2SA1013-R 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1013-O Phone (818) 701-4933 Fax (818) 701-4939 2SA1013-Y Features Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information) Capable of 0.9Watts of Power Dissipation. PNP Collector-current -1.0A Epitaxial Sili

Transistor 2SA1018 Silicon PNP epitaxial planer type For general amplification Unit mm Complementary to 2SC1473 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 250 V +0.2 +0.2 Collector to emitter voltage VCEO 200 V 0.45 0.1 0.45 0.1 1.27 1.27 Emitter

Transistor 2SA1018 Silicon PNP epitaxial planer type For general amplification Unit mm Complementary to 2SC1473 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 250 V +0.2 +0.2 Collector to emitter voltage VCEO 200 V 0.45 0.1 0.45 0.1 1.27 1.27 Emitter

UNISONIC TECHNOLOGIES CO., LTD 2SA1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES * Collector-Emitter Voltage BV =-50V CEO 1 * Collector Current up to 150mA * High h Linearity FE TO-92 * Complement to UTC 2SC1815 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 2SA1015L-xx-

UNISONIC TECHNOLOGIES CO., LTD 2SA1013 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses UTC s advanced technology to provide the customers with high BVCEO and high DC current gain, etc. The UTC 2SA1013 is suitable for power switching and color TV vertical deflection output, etc.

UNISONIC TECHNOLOGIES CO., LTD 2SA1012 PNP SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION FEATURES *Low Collector Saturation Voltage V =-0.4V(max.) At I =-3A CE(SAT) C *High Speed Switching Time t =1.0 s (Typ.) S *Complementary To 2SC2562 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SA1012L-x-TA3-

A A A

2SA1015K PNP Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 Dim Min Max A 2.800 3.040 FEATURES B 1.200 1.400 . Power Dissipation C 0.890 1.110 PCM 0.2 W ( Ta = 25 ) A D 0.370 0.500 . Collector Current L G 1.780 2.040 ICM -0.15 A 3 3 H 0.013 0.100 . Collector-Base Volt

2SA1013 -1A, -160V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURE TO-92L High Voltage VCEO= -160V G H Large Continuous Collector Current Capability 1Emitter 1 1 1 2Collector 2 2 Complementary to 2SC2383 2 3Base 3 3 3 J A D CLASSIFICATION OF hFE Millimete

TRANSISTOR (PNP) 1.EMITTER 2.COLLECTOR Power dissipation 3.BASE Equivalent Circuit Z Z 1

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1013 TRANSISTOR (PNP) 1. BASE FEATURE 1 High voltage 2. COLLECTOR 2 2 3 Large continuous collector current capability 3. EMITTER MARKING 1013 MAXIMUM RATINGS (Ta=25 unless otherwise noted ) Symbol Parameter Value Unit VCBO Collector-Base Voltag

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SA1012B TRANSISTOR (PNP) FEATURES TO-252-2L -2A,-50V Middle Power Transistor Suitable for Middle Power Driver Low Collector-emitter saturation voltage APPLICATIONS 1. BASE Middle Power Driver 2. COLLECTOR LED Driver Power Supply 3. EMITTER MARKING A1012B= Dev

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SA1012 TRANSISTOR (PNP) FEATURES High Current Switching Applications. Low Collector Saturation Voltage High Speed Swithing Time 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base

Power Transistors www.jmnic.com 2SA1012 Silicon PNP Transistors Features B C E With TO-220 package Complementary to 2SC2562 Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage -60 V VCEO Collector to emitter voltage -50 V VEBO Emitter to base voltage -5 V IB Base current A IC Collector current -5 A PC Collector power dissip

JMnic Product Specification Silicon PNP Power Transistors 2SA1011 DESCRIPTION With TO-220 package Complement to type 2SC2344 APPLICATIONS High voltage switching , Audio frequency power amplifier; 100W output predriver applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PA

2SA1013 TO-92MOD Transistor (PNP) TO-92MOD 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE 5.800 Features 6.200 High voltage VCEO=-160V 8.400 8.800 Large continuous collector current capability 0.900 Complementary to 2SC2383 1.100 0.400 0.600 13.800 14.200 1.500 TYP 2.900 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted)

2SA1013 TO-92L Transistor (PNP) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 2 3 4.700 1 5.100 Features 7.800 High voltage VCEO=-160V 8.200 0.600 Large continuous collector current capability 0.800 Complementary to 2SC2383 0.350 0.550 13.800 14.200 Dimensions in inches and (millimeters) 1.270 TYP MAXIMUM RATINGS (TA=25 unless otherwise noted) 2.440 2.640

2SA1012(PNP) TO-220 Transistor TO-220 1. BASE 2. COLLECTOTR 3. EMITTER 3 2 1 Features HIGH CURRENT SWITCHING APPLICATIONS. Low Collector Saturation Voltage VCE(SAT) = - 0.4V(MAX) at IC= - 3A High Speed Swithing Time tstg = 1.0us (Typ.) Complementary to 2SC2562 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Coll

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors 2SA1015 TRANSISTOR (PNP) SOT-23 FEATURES High voltage and high current Excellent hFE Linearity 1. BASE Low niose 2. EMITTER Complementary to 2SC1815 3. COLLECTOR MARKING BA MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Ba

2SA1015M Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features , , h , , 2SC1815M FE High voltage and high current, excellent hFE linearity, low noise, complementary pair with 2SC1815M. / Applicati

2SA1015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, L , according to its DC current gain. As complementary type the NPN transistor 2SC1815 is recommended. 1. Emitter 2. Collector 3. Base TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit

ST 2SA1012 PNP Silicon Epitaxial Planar Transistor for high current switching applications. The transistor is subdivided into two group, O and Y, according to its DC current gain. TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 5 V Collec

SEMICONDUCTOR 2SA1015LT1 Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR Package SOT-23 * Complement to 2SC1815 * Collector Current Ic=150mA ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo -60 V Collector-Emitter Voltage Vceo -50 V PIN 1 2 3 Emitter-Base Voltage Vebo -5 V

SMD Type or SMD Type TransistICs PNP Transistors 2SA1015 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features High voltage and high current VCEO =-50V(min.),IC=-150mA(max.) 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 Low niose NF=1dB(Typ.) at f=1KHz 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VC

SMD Type Transistors PNP Transistors 2SA1013 1.70 0.1 Features High voltage Large continuous collector current capability 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -160 Collector - Emitter Voltage VCEO -160 V Emitter - Base Voltage VEBO -6 Collector Current

2SA1011(3CA1011) PNP /SILICON PNP TRANSISTOR 100W Purpose High voltage switching, AF power amplifier, 100W output predriver applications. 2SC2344(3DA2344) Features complementary pair with 2SC2344(3DA2344). /Absolute maximum ratings(Ta=25 )

2SA1012(3CA1012) PNP /SILICON PNP TRANSISTOR Purpose High current switching applications. , , 2SC2562(3DA2562) Features Low collector saturation voltage, high speed switching time, complementary to 2SC2562(3DA2562). /Absolute maximum ratings(Ta=25 )

R UMW UMW 2SA1015 SOT-23 Plastic-Encapsulate Transistors TRANSI STOR (PNP) 2SA1015 MARKING Equivalent Circuit SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES High voltage and high current Excellent hFE Linearity Complementary to C1815 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO -50 V Collector-Emit

www.msksemi.com 2SA1015-MS Semiconductor Compiance Semiconductor Compiance TRANSI STOR ( PNP) FEATURES High voltage and high current Excellent hFE Linearity 1. BASE Complementary to C1815-MS 2. EMITTER SOT 23 3. COLLECTOR MARKING BA MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emi

2SA1013SQ PNP Transistor Features SOT-89 High voltage Large continuous collector current capability Equivalent Circuit 2.Collector 1.Base 2.Collector 3. Emitter Marking Code 2SA1013SQ-R 1013R 1.Base 2SA1013SQ-O 1013O 2SA1013SQ-Y 1013Y 3. Emitter . Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Va

2SC1015 PNP Transistors 3 2 1.Base Features 2.Emitter 1 3.Collector High voltage and high current VCEO =-50V(min.),IC=-150mA(max.) Simplified outline(SOT-23) Low niose NF=1dB(Typ.) at f=1KHz Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current -Con

2SA1013 SOT-89 PNP Transistors 3 Features 2 High voltage 1.Base 1 Large continuous collector current capability 2.Collector 3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -160 Collector - Emitter Voltage VCEO -160 V Emitter - Base Voltage VEBO -6 Collector Current - Con

2SA1015 2 SA10 15 TRANSISTOR (PNP) FEATURES SOT-23 High voltage and high current Excellent hFE Linearity 1 BASE Complementary to C1815 2 EMITTER 3 COLLECTOR O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit -50 Collector Base Voltage VCBO V -50 Collector Emitter Voltage VCEO V -5 Emitter Base Voltage VEBO V Collector Current IC -150 mA

2SA1015 BIPOLAR TRANSISTOR (PNP) FEATURES High current And High voltage Excellent h Linearity FE Low Noise Surface Mount device Complementary to 2SC1815 SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise no

isc Silicon PNP Transistor 2SA1015 DESCRIPTION High Voltage and High Current Vceo=-50V(Min. Ic=-150mA(Max) Excellent hFE Linearity Low Noise Complement to Type 2SC1815 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency general purpose amplifier Applications Driver stage amplifier applications. ABSOL

INCHANGE Semiconductor isc Silicon PNP Transistor 2SA1013 DESCRIPTION High Voltage and High Current Vceo=-160V(Min. Excellent hFE Linearity Low Noise Complement to Type 2SC2383 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency general purpose amplifier Applications Driver stage amplifier applications. AB

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1012-D DESCRIPTION Low Collector Saturation Voltage V = -0.4(V)(Max)@I = -3A CE(sat) C High Switching Speed TO-252 Package -D = Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 )

isc Silicon PNP Power Transistor 2SA1012 DESCRIPTION Low Collector Saturation Voltage V = -0.4(V)(Max)@I = -3A CE(sat) C High Switching Speed Complement to Type 2SC2562 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 )

sc Silicon PNP Power Transistor 2SA1011 DESCRIPTION Low Collector Saturation Voltage- V = -0.5V(Typ.)@ I = -0.5A CE(sat) C Collector-Emitter Breakdown Voltage- V = -160V(Min.) (BR)CEO Complement to Type 2SC2344 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage switching, audio frequency power ampl