DATA SHEETSILICON POWER TRANSISTOR2SA1010PNP SILICON EPITAXIAL TRANSISTORFOR HIGH-VOLTAGE HIGH-SPEED SWITCHINGThe 2SA1010 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)voltage high-speed switching, and is ideal for use as a driver indevices such as switching regulators, DC/DC converters, and high-frequency power amplifiers.FEATURES Low collector

Product Specification www.jmnic.comSilicon PNP Power Transistors 2SA1010 DESCRIPTION With TO-220 package Complement to type 2SC2334 Low collector saturation voltage Fast switching speed APPLICATIONS Switching regulators DC/DC converters High frequency power amplifiers PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 si

isc Silicon PNP Power Transistor 2SA1010DESCRIPTIONLow Collector Saturation VoltageFast Switching SpeedComplement to Type 2SC2334Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDeveloped for high-voltage high-speed switching, and isideal for use as a driver in devices such as switching reg-lators, DC/DC converters, and h

2SA1015 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015 Audio Frequency General Purpose Amplifier Applications Unit: mm Driver Stage Amplifier Applications High voltage and high current: VCEO = -50 V (min), I = -150 mA (max) C Excellent h linearity: h = 80 (typ.) at V = -6 V, I = -150 mA FE FE (2) CE C: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95

2SA1015(L) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Unit: mm Low Noise Amplifier Applications High voltage and high current: VCEO = -50 V (min), I = -150 mA (max) C Excellent h linearity: h (2) = 80 (typ.) at V = -6 V, I = -150 mA FE FE CE C: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.)

Ordering number:ENN572EPNP/NPN Epitaxial Planar Silicon Transistors2SA1016, 1016K/2SC2362, 2362KHigh-Voltage Low-Noise Amp ApplicationsPackage Dimensionsunit:mm2003B[2SA1016, 1016K/2SC2362, 2362K]5.04.04.00.450.50.440.451 2 31 : Emitter( ) : 2SA1016, 1016K 2 : Collecor3 : BaseSpecifications 1.3 1.3SANYO : NPAbsolute Maximum Ratings at Ta = 25C2SA101

Ordering number:ENN544GPNP/NPN Epitaxial Planar Silicon Transistors2SA1011/2SC2344High-Voltage Switching, AF Power Amp,100W Output Predriver ApplicationsPackage Dimensionsunit:mm2010C[2SA1011/2SC2344]10.24.53.65.11.31.20.80.41 2 31 : Base( ) : 2SA10112 : Collector3 : Emitter2.55 2.55SpecificationsSANYO : TO220ABAbsolute Maximum Ratings at Ta = 2

MCCMicro Commercial ComponentsTM 2SA1013-R20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1013-OPhone: (818) 701-4933Fax: (818) 701-49392SA1013-YFeatures Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information) Capable of 0.9Watts of Power Dissipation. PNP Collector-current -1.0A Epitaxial Sili

2SA1015-OMCCMicro Commercial ComponentsTM2SA1015-Y20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1015-GRPhone: (818) 701-4933Fax: (818) 701-4939Features Capable of 0.4Watts of Power Dissipation.PNP Silicon Collector-current 0.15A Collector-base Voltage 50VPlastic-Encapsulate Operating and storage junction temperature range: -

MCCMicro Commercial ComponentsTM 2SA1013-R20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1013-OPhone: (818) 701-4933Fax: (818) 701-49392SA1013-YFeatures Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information) Capable of 0.9Watts of Power Dissipation. PNP Collector-current -1.0A Epitaxial Sili

2SA1015-OMCCMicro Commercial ComponentsTM2SA1015-Y20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1015-GRPhone: (818) 701-4933Fax: (818) 701-4939Features Capable of 0.4Watts of Power Dissipation.PNP Silicon Collector-current 0.15A Collector-base Voltage 50VPlastic-Encapsulate Operating and storage junction temperature range: -

2SA1015-OMCCMicro Commercial ComponentsTM2SA1015-Y20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1015-GRPhone: (818) 701-4933Fax: (818) 701-4939Features Capable of 0.4Watts of Power Dissipation.PNP Silicon Collector-current 0.15A Collector-base Voltage 50VPlastic-Encapsulate Operating and storage junction temperature range: -

MCCMicro Commercial ComponentsTM 2SA1013-R20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1013-OPhone: (818) 701-4933Fax: (818) 701-49392SA1013-YFeatures Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information) Capable of 0.9Watts of Power Dissipation. PNP Collector-current -1.0A Epitaxial Sili

Transistor2SA1018Silicon PNP epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SC14735.0 0.2 4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 250 V+0.2 +0.2Collector to emitter voltage VCEO 200 V 0.45 0.1 0.45 0.11.27 1.27Emitter

Transistor2SA1018Silicon PNP epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SC14735.0 0.2 4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 250 V+0.2 +0.2Collector to emitter voltage VCEO 200 V 0.45 0.1 0.45 0.11.27 1.27Emitter

UNISONIC TECHNOLOGIES CO., LTD 2SA1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES * Collector-Emitter Voltage: BV =-50V CEO1* Collector Current up to 150mA * High h Linearity FETO-92* Complement to UTC 2SC1815 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 2SA1015L-xx-

UNISONIC TECHNOLOGIES CO., LTD 2SA1013 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses UTCs advanced technology to provide the customers with high BVCEO and high DC current gain, etc. The UTC 2SA1013 is suitable for power switching and color TV vertical deflection output, etc.

UNISONIC TECHNOLOGIES CO., LTD 2SA1012 PNP SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION FEATURES *Low Collector Saturation Voltage V =-0.4V(max.) At I =-3A CE(SAT) C*High Speed Switching Time: t =1.0s (Typ.) S*Complementary To 2SC2562 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 32SA1012L-x-TA3-

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2SA1015K PNP Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeSOT-23Dim Min MaxA 2.800 3.040 FEATURES B 1.200 1.400. Power Dissipation C 0.890 1.110PCM: 0.2 W ( Ta = 25 ) AD 0.370 0.500. Collector Current LG 1.780 2.040ICM: -0.15 A 33 H 0.013 0.100. Collector-Base Volt

2SA1013 -1A, -160V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURE TO-92L High VoltageVCEO= -160V G H Large Continuous Collector Current Capability 1Emitter 1112Collector 22 Complementary to 2SC2383 23Base 333 JA DCLASSIFICATION OF hFE Millimete

TRANSISTOR (PNP) 1.EMITTER 2.COLLECTOR Power dissipation 3.BASE Equivalent Circuit Z Z 1

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1013 TRANSISTOR (PNP) 1. BASE FEATURE 1 High voltage 2. COLLECTOR 2 2 3 Large continuous collector current capability 3. EMITTER MARKING: 1013 MAXIMUM RATINGS (Ta=25 unless otherwise noted )Symbol Parameter Value UnitVCBO Collector-Base Voltag

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SA1012B TRANSISTOR (PNP) FEATURES TO-252-2L -2A,-50V Middle Power Transistor Suitable for Middle Power Driver Low Collector-emitter saturation voltage APPLICATIONS 1. BASE Middle Power Driver 2. COLLECTOR LED Driver Power Supply3. EMITTER MARKING A1012B= Dev

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SA1012 TRANSISTOR (PNP) FEATURES High Current Switching Applications. Low Collector Saturation Voltage High Speed Swithing Time 1. BASE 2. COLLECTOR3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base

Power Transistors www.jmnic.com 2SA1012 Silicon PNP Transistors Features B C E With TO-220 package Complementary to 2SC2562 Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVCBO Collector to base voltage -60 V VCEO Collector to emitter voltage -50 V VEBO Emitter to base voltage -5 V IB Base current A IC Collector current -5 A PC Collector power dissip

JMnic Product Specification Silicon PNP Power Transistors 2SA1011 DESCRIPTION With TO-220 package Complement to type 2SC2344 APPLICATIONS High voltage switching , Audio frequency power amplifier; 100W output predriver applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PA

2SA1013 TO-92MOD Transistor (PNP)TO-92MOD1. EMITTER 1 22. COLLECTOR 3 3. BASE 5.800Features6.200High voltage:VCEO=-160V 8.4008.800Large continuous collector current capability 0.900Complementary to 2SC2383 1.1000.4000.60013.80014.2001.500 TYP2.900 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted)

2SA1013 TO-92L Transistor (PNP)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 2 3 4.70015.100Features7.800 High voltage:VCEO=-160V 8.2000.600 Large continuous collector current capability 0.800Complementary to 2SC2383 0.3500.55013.80014.200Dimensions in inches and (millimeters)1.270 TYPMAXIMUM RATINGS (TA=25 unless otherwise noted) 2.4402.640

2SA1012(PNP) TO-220 TransistorTO-2201. BASE 2. COLLECTOTR3. EMITTER 3 21FeaturesHIGH CURRENT SWITCHING APPLICATIONS. Low Collector Saturation Voltage : VCE(SAT) = - 0.4V(MAX) at IC= - 3A High Speed Swithing Time : tstg = 1.0us (Typ.) Complementary to 2SC2562 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Coll

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors 2SA1015 TRANSISTOR (PNP) SOT-23 FEATURES High voltage and high current Excellent hFE Linearity 1. BASE Low niose 2. EMITTER Complementary to 2SC1815 3. COLLECTOR MARKING: BA MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Ba

2SA1015 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features ,, h ,, 2SC1815 FEHigh voltage and high current, excellent hFE linearity, low noise, complementary pair with 2SC1815. / Applications

2SA1015M Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features ,, h ,, 2SC1815M FEHigh voltage and high current, excellent hFE linearity, low noise, complementary pair with 2SC1815M. / Applicati

2SA1013T Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features ,, 2SC2383T High voltage, large continuous collector current capability, Complementary pair with 2SC2383T. / Applications ,

2SA1013 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-92LM PNP Silicon PNP transistor in a TO-92LM Plastic Package. / Features ,, 2SC2383 High voltage, large continuous collector current capability, Complementary pair with 2SC2383.. / Applications ,

2SA1015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, L , according to its DC current gain. As complementary type the NPN transistor 2SC1815 is recommended. 1. Emitter 2. Collector 3. Base TO-92 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit

ST 2SA1012 PNP Silicon Epitaxial Planar Transistor for high current switching applications. The transistor is subdivided into two group, O and Y, according to its DC current gain. TO-220 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 60 VCollector Emitter Voltage -VCEO 50 VEmitter Base Voltage -VEBO 5 VCollec

SEMICONDUCTOR 2SA1015LT1 Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR Package:SOT-23 * Complement to 2SC1815 * Collector Current : Ic=150mA ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating UnitCollector-Base Voltage Vcbo -60 V Collector-Emitter Voltage Vceo -50 V PIN: 1 2 3Emitter-Base Voltage Vebo -5 V

SMD Type orSMD Type TransistICsPNP Transistors2SA1015SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13FeaturesHigh voltage and high currentVCEO:=-50V(min.),IC=-150mA(max.)1 2+0.050.95+0.1-0.1 0.1 -0.01Low niose: NF=1dB(Typ.) at f=1KHz1.9+0.1-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VC

SMD Type TransistorsPNP Transistors2SA10131.70 0.1 Features High voltage Large continuous collector current capability0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -160 Collector - Emitter Voltage VCEO -160 V Emitter - Base Voltage VEBO -6 Collector Current

2SA1011(3CA1011) PNP /SILICON PNP TRANSISTOR :100W Purpose: High voltage switching, AF power amplifier, 100W output predriver applications. : 2SC2344(3DA2344) Features: complementary pair with 2SC2344(3DA2344). /Absolute maximum ratings(Ta=25)

2SA1012(3CA1012) PNP /SILICON PNP TRANSISTOR : Purpose: High current switching applications. ,, 2SC2562(3DA2562) Features: Low collector saturation voltage, high speed switching time, complementary to 2SC2562(3DA2562). /Absolute maximum ratings(Ta=25)

RUMW UMW 2SA1015 SOT-23 Plastic-Encapsulate Transistors TRANSI STOR (PNP)2SA1015MARKING: Equivalent Circuit:SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: High voltage and high current Excellent hFE Linearity Complementary to C1815 MAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector-Base Voltage VCBO -50 VCollector-Emit

www.msksemi.com2SA1015-MSSemiconductor CompianceSemiconductor Compiance TRANSI STOR ( PNP)FEATURES High voltage and high current Excellent hFE Linearity1. BASE Complementary to C1815-MS2. EMITTERSOT23 3. COLLECTORMARKING: BA MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -50 V VCEO Collector-Emi

2SA1013SQ PNP TransistorFeatures SOT-89 High voltage Large continuous collector current capabilityEquivalent Circuit 2.Collector1.Base 2.Collector 3. EmitterMarking Code : 2SA1013SQ-R : 1013R 1.Base2SA1013SQ-O : 1013O 2SA1013SQ-Y : 1013Y3. Emitter.Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified.Parameter Symbol Va

2SC1015PNP Transistors321.BaseFeatures 2.Emitter1 3.CollectorHigh voltage and high currentVCEO:=-50V(min.),IC=-150mA(max.) Simplified outline(SOT-23)Low niose: NF=1dB(Typ.) at f=1KHzAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO -50 VCollector-Emitter Voltage VCEO -50 VEmitter-Base Voltage VEBO -5 VCollector Current -Con

2SA1013 SOT-89 PNP Transistors3 Features2 High voltage1.Base1 Large continuous collector current capability2.Collector3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO -160Collector - Emitter Voltage VCEO -160 VEmitter - Base Voltage VEBO -6Collector Current - Con

2SA10152 SA10 15 TRANSISTOR (PNP) FEATURES SOT-23 High voltage and high current Excellent hFE Linearity1BASE Complementary to C18152EMITTER 3COLLECTOR OAbsolute Maximum Ratings (Ta = 25 C)Parameter Symbol Value Unit -50 Collector Base Voltage VCBO V -50 Collector Emitter Voltage VCEO V -5 Emitter Base Voltage VEBO V Collector Current IC -150 mA

2SA1015BIPOLAR TRANSISTOR (PNP)FEATURES High current And High voltage Excellent h LinearityFE Low Noise Surface Mount device Complementary to 2SC1815SOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise no

`isc Silicon PNP Transistor 2SA1015DESCRIPTIONHigh Voltage and High CurrentVceo=-50V(Min.Ic=-150mA(Max)Excellent hFE LinearityLow NoiseComplement to Type 2SC1815Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency general purpose amplifier ApplicationsDriver stage amplifier applications.ABSOL

INCHANGE Semiconductorisc Silicon PNP Transistor 2SA1013DESCRIPTIONHigh Voltage and High CurrentVceo=-160V(Min.Excellent hFE LinearityLow NoiseComplement to Type 2SC2383Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency general purpose amplifier ApplicationsDriver stage amplifier applications.AB

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1012-DDESCRIPTIONLow Collector Saturation Voltage:V = -0.4(V)(Max)@I = -3ACE(sat) CHigh Switching Speed TO-252 Package-D=Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)

isc Silicon PNP Power Transistor 2SA1012DESCRIPTIONLow Collector Saturation Voltage:V = -0.4(V)(Max)@I = -3ACE(sat) CHigh Switching SpeedComplement to Type 2SC2562100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)

sc Silicon PNP Power Transistor 2SA1011DESCRIPTIONLow Collector Saturation Voltage-: V = -0.5V(Typ.)@ I = -0.5ACE(sat) CCollector-Emitter Breakdown Voltage-: V = -160V(Min.)(BR)CEOComplement to Type 2SC2344Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage switching, audio frequency powerampl