DTC114EY3. Аналоги и основные параметры
Наименование производителя: DTC114EY3
Маркировка: 8A
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 10 kOhm
Встроенный резистор цепи смещения R2 = 10 kOhm
Соотношение сопротивлений R1/R2 = 1
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
Макcимальный постоянный ток коллектора (Ic): 0.05 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 250 MHz
Статический коэффициент передачи тока (hFE): 30
Корпус транзистора: SOT-723
Аналоги (замена) для DTC114EY3
- подборⓘ биполярного транзистора по параметрам
DTC114EY3 даташит
dtc114ey3.pdf
Spec. No. C351Y3 Issued Date 2011.08.24 CYStech Electronics Corp. Revised Date Page No. 1/6 NPN Digital Transistors (Built-in Resistors) DTC114EY3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors with complete
pdtc114eu 4.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTC114EU NPN resistor-equipped transistor 1999 Apr 16 Product specification Supersedes data of 1998 Nov 26 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EU FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 handbook, 4 columns Simplification of circuit design
pdtc114es 3.pdf
DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC114ES NPN resistor-equipped transistor 1998 Nov 26 Product specification Supersedes data of 1998 May 18 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114ES FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) Simplification of circuit design handbook, halfpage 2 Reduces numbe
pdtc114ek 3.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 PDTC114EK NPN resistor-equipped transistor 1998 Nov 26 Product specification Supersedes data of 1998 May 19 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EK FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 Simplification of circuit design 3 Reduces number
pdtc114eef 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC114EEF NPN resistor-equipped transistor 1999 May 31 Product specification Supersedes data of 1998 Nov 11 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EEF FEATURES Power dissipation comparable to SOT23 Built-in bias resistors R1 and R2 3 handbook, halfpage (typ. 10 k each) 3 R1
pdtc114eu 4.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTC114EU NPN resistor-equipped transistor 1999 Apr 16 Product specification Supersedes data of 1998 Nov 26 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EU FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 handbook, 4 columns Simplification of circuit design
pdtc114e series.pdf
DISCRETE SEMICONDUCTORS DATA SHEET PDTC114E series NPN resistor-equipped transistor; R1 = 10 k , R2 = 10 k Product data sheet 2004 Aug 05 Supersedes data of 2003 Apr 10 NXP Semiconductors Product data sheet NPN resistor-equipped transistor; PDTC114E series R1 = 10 k , R2 = 10 k FEATURES QUICK REFERENCE DATA Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNIT
pdtc114es 3.pdf
DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC114ES NPN resistor-equipped transistor 1998 Nov 26 Product specification Supersedes data of 1998 May 18 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114ES FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) Simplification of circuit design handbook, halfpage 2 Reduces numbe
pdtc114ek 3.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 PDTC114EK NPN resistor-equipped transistor 1998 Nov 26 Product specification Supersedes data of 1998 May 19 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EK FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 Simplification of circuit design 3 Reduces number
pdtc114eef 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC114EEF NPN resistor-equipped transistor 1999 May 31 Product specification Supersedes data of 1998 Nov 11 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EEF FEATURES Power dissipation comparable to SOT23 Built-in bias resistors R1 and R2 3 handbook, halfpage (typ. 10 k each) 3 R1
dtc114eub.pdf
Transistors DTC114EUB 100mA / 50V Digital transistors (with built-in resistors) DTC114EUB Applications Dimensions (Unit mm) Inverter, Interface, Driver UMT3F 2.0 Features 0.9 0.32 1) Built-in bias resistors enable the configuration of (3) an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-
dtc114ee.pdf
100mA / 50V Digital transistors (with built-in resistors) DTC114EM / DTC114EE / DTC114EUA / DTC114EKA Applications Inverter, Interface, Driver Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation t
dtc114eka.pdf
DTC114E series Datasheet NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) lOutline l Parameter Value VMT3 EMT3F VCC 50V IC(MAX.) 100mA R1 10k DTC114EM DTC114EEB R2 (SC-105AA) (SC-89) 10k EMT3 UMT3F lFeatures l 1) Built-In Biasing Resistors, R1 = R2 = 10k 2) Built-in bias resistors enable the configuration of
dtc114eeb.pdf
Transistors DTC114EEB 100mA / 50V Digital transistors (with built-in resistors) DTC114EEB Applications Dimensions (Unit mm) Inverter, Interface, Driver EMT3F 1.6 0.7 Features 0.26 1) Built-in bias resistors enable the configuration of (3) an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-f
dtc114e-series.pdf
100mA / 50V Digital transistors (with built-in resistors) DTC114EB / DTC114EM / DTC114EE / DTC114EUA / DTC114EKA Applications Inverter, Interface, Driver Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isol
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DTC114E series Datasheet NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) lOutline l Parameter Value VMT3 EMT3F VCC 50V IC(MAX.) 100mA R1 10k DTC114EM DTC114EEB R2 (SC-105AA) (SC-89) 10k EMT3 UMT3F lFeatures l 1) Built-In Biasing Resistors, R1 = R2 = 10k 2) Built-in bias resistors enable the configuration of
dtc114ee-eua-eka-eca 24 sot416 323 346 23.pdf
Transistors Digital transistors (built-in resistors) DTC114EE / DTC114EUA / DTC114EKA DTC114ECA / DTC114ESA FFeatures FExternal dimensions (Units mm) 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin- film resistors with complete isola- tion to allow n
ddtc114elp.pdf
DDTC114ELP PRE-BIASED (R1 = R2) SMALL SIGNAL SURFACE MOUNT 100mA NPN TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case DFN1006-3 Ultra-Small Leadless Surface Mount Package Case Material Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Ideally Suited for Automated Assembly Processes Moisture Sens
ddtc114eua.pdf
DDTC (R1 = R2 SERIES) UA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Product Summary Features and Benefits Epitaxial Planar Die Construction Part Number R1, R2 (NOM) Complementary PNP Types Available (DDTA) DDTC123EUA 2.2K Built-In Biasing Resistors, R1 = R2 DDTC143EUA 4.7K Lead Free , RoHS Compliant (Note 1) Halogen and Antimony Free "Gr
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DDTC (R1 = R2 SERIES) EE NPN PRE-BIASED TRANSISTOR IN SOT523 Features Mechanical Data Epitaxial Planar Die Construction Case SOT523 Complementary PNP Types Available (DDTA) Case Material Molded Plastic, Green Molding Compound Built-In Biasing Resistors, R1 = R2 UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes
ddtc114ee.pdf
DDTC (R1 = R2 SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-523 Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1 = R2 Dim Min Max Typ B C Lead Free/RoHS Compliant (Note 1) TOP VIEW A 0.15 0.30 0.22 "Green" Device (Note 3 and 4) B 0.75 0.85 0.80 C 1.45 1.75 1.60 M
ddtc114eka.pdf
DDTC (R1 = R2 SERIES) KA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SC-59 Complementary PNP Types Available (DDTA) Dim Min Max Built-In Biasing Resistors, R1 = R2 A 0.35 0.50 Lead Free/RoHS Compliant (Note 2) "Green" Device, Note 3 and 4 B C B 1.50 1.70 C 2.70 3.00 D 0.95 Mechanical Data G G
ddtc123eca ddtc143eca ddtc114eca ddtc124eca ddtc144eca ddtc115eca.pdf
DDTC(R1 = R2 SERIES) CA NPN PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case SOT23 Complementary PNP Types Available (DDTA) Case material Molded Plastic. Green Molding Compound. Built-In Biasing Resistors, R1 = R2 Classification Rating 94V-0 Totally Lead-Free & Fully RoHS complia
sdtc114eet1g.pdf
DTC114EET1 Series, SDTC114EET1 Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single http //onsemi.com device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two r
dtc114exv3t1-series.pdf
DTC114EXV3T1 Series Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor http //onsemi.com contains a single transistor with a monolithic bias network consisting of two resistors; a series base resis
dtc114eet1-series.pdf
DTC114EET1 Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor http //onsemi.com Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series ba
dtc114eet1g dtc114tet1g dtc114yet1g dtc115eet1g dtc123eet1g.pdf
DTC114EET1 Series, SDTC114EET1 Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single http //onsemi.com device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two r
dtc114em3-series.pdf
DTC114EM3T5G Series Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor http //onsemi.com contains a single transistor with a monolithic bias network consisting of two resistors; a series base resis
dtc114eet1 8a-m sot416.pdf
DTC114EET1 SERIES Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor http //onsemi.com Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series ba
dtc114eseria 8a-m sot416.pdf
DTC114EET1 SERIES Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor http //onsemi.com Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series ba
dtc114em3.pdf
MUN2211, MMUN2211L, MUN5211, DTC114EE, DTC114EM3, NSBC114EF3 Digital Transistors (BRT) R1 = 10 kW, R2 = 10 kW http //onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (
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DTC114EM3T5G Series Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor http //onsemi.com contains a single transistor with a monolithic bias network consisting of two resistors; a series base resis
dtc114e.pdf
UNISONIC TECHNOLOGIES CO., LTD DTC114E NPN SILICON TRANSISTOR NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) FEATURES * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow negative input. EQUIVALENT CIRCUIT ORDERING INFORMATION Ordering Number Pin Assignment Package Packing
dtc114eca dtc114esa dtc114eua.pdf
DTC114EE / DTC114EUA DTC114ECA / DTC114ESA / DTC114EM NPN Digital Transistors (Built-in Resistors) Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES DTC114EE (SOT-523) DTC114EUA (SOT-323) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equ
dtc114e.pdf
DTC114EE/DTC114EUA/DTC114ECA DTC114EKA/DTC114ESA Digital Transistor(NPN) Features 1. Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit). 2. The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input.They also have the advantage of almost comp
dtc114eca.pdf
DTC114ECA NPN DIGITAL TRANSISTOR 3 P b Lead(Pb)-Free 1 2 SOT-23 Features (1)GND (2)OUT (3)IN without connecting external input resistors(see equivalent circuit). to allow negative biasing of the input.They also have the advantage device design easy. Absolute maximum ratings(Ta=25 ) Parameter Symbol Value Unit Supply voltage VCC 50 V Input voltage VIN -10 40 V IO 50 Ou
dtc114ee.pdf
DTC114EE Series Bias Resistor Transistor NPN Silicon 3 P b Lead(Pb)-Free COLLECTOR 1 2 3 R1 1 R2 BASE SC-89 (SOT-523F) 2 EMITTER Maximum Ratings (TA=25 C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage 50 V VCEO VCBO V Collector-Base Voltage 50 mA IC 100 Collector Current-Continuous Thermal Characteristics Characteristics Symbol Max Unit To
dtc114em.pdf
DTC114EM Series Bias Resistor Transistor NPN Silicon 3 P b Lead(Pb)-Free COLLECTOR 1 3 2 R1 1 R2 BASE SOT-723 2 EMITTER Maximum Ratings (TA=25 C unless otherwise noted) Rating Symbol Value Unit Collector-Base Voltage VCBO V 50 VCEO Collector-Emitter Voltage 50 V mA IC 100 Collector Current-Continuous Thermal Characteristics Characteristics Symbol Max Unit Total Device
dtc114eua.pdf
DTC114EUA NPN DIGITAL TRANSISTOR 3 P b Lead(Pb)-Free 1 2 Features SOT-323(SC-70) (1)GND (2)OUT (3)IN without connecting external input resistors(see equivalent circuit). to allow negative biasing of the input.They also have the advantage device design easy. Absolute maximum ratings(Ta=25 ) Parameter Symbol Value Unit Supply voltage VCC 50 V Input voltage VIN -10 40 V IO
dtc114esa.pdf
DTC114ESA NPN DIGITAL TRANSISTOR P b Lead(Pb)-Free Features 1 2 3 without connecting external input resistors(see equivalent circuit). (1)GND (2)OUT (3)IN to allow negative biasing of the input.They also have the advantage device design easy. Absolute maximum ratings(Ta=25 ) Parameter Symbol Value Unit Supply voltage VCC 50 V Input voltage VIN -10 40 V IO 50 Output curre
dtc114eca.pdf
FM120-M WILLAS THRU DTC114ECA NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produc Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H SOT-23 Features Low profile surface mounted application in order to
dtc114ee.pdf
FM120-M WILLAS THRU DTC114EE NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produc Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimize board spa
dtc114eua.pdf
FM120-M WILLAS THRU DTC114EUA NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produ Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Features Low profile surface mounted application in order to optimi
dtc114es3.pdf
Spec. No. C351S3 Issued Date 2002.06.01 CYStech Electronics Corp. Revised Date 2010.11.10 Page No. 1/6 NPN Digital Transistors (Built-in Resistors) DTC114ES3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors wi
dtc114ec3.pdf
Spec. No. C351C3 Issued Date 2010.12.31 CYStech Electronics Corp. Revised Date 2011.08.24 Page No. 1/6 NPN Digital Transistors (Built-in Resistors) DTC114EC3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors wi
dtc114eb3.pdf
Spec. No. C351B3 Issued Date 2003.08.20 CYStech Electronics Corp. Revised Date 2008.04.28 Page No. 1/5 NPN Digital Transistors (Built-in Resistors) DTC114EB3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors wi
dtc114en3.pdf
Spec. No. C351N3 Issued Date 2002.06.01 CYStech Electronics Corp. Revised Date 2012.01.05 Page No. 1/7 NPN Digital Transistors (Built-in Resistors) DTC114EN3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors wi
dtc114ea3.pdf
Spec. No. C351A3 Issued Date 2003.08.20 CYStech Electronics Corp. Revised Date 2003.09.29 Page No. 1/6 NPN Digital Transistors (Built-in Resistors) DTC114EA3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors wi
ldtc114em3t5g.pdf
LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors NPN Silicon Surface Mount Transistors LDTC114EM3T5G With Monolithic Bias Resistor Network Series This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor 3 Transistor) contains a single transistor with a monolithic bias network consisting of two resi
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LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors NPN Silicon Surface Mount Transistors Series LDTC114EM3T5G LDTC114EM3T5G S-LDTC114EM3T5G Series With Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic
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LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors NPN Silicon Surface Mount Transistors Series LDTC114EM3T5G LDTC114EM3T5G S-LDTC114EM3T5G Series With Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic
ldtc114eet1g.pdf
LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors LDTC114EET1G Series NPN Silicon Surface Mount Transistors S-LDTC114EET1G Series with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network cons
dtc114e.pdf
SEMICONDUCTOR DTC114E TECHNICAL DATA Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network B This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor K Transistor) contains a single transistor with a monolithic bias network resistor. The BRT eliminates the
dtc114ee.pdf
SMD Type Transistors Digital Transistors DTC114EE (KDTC114EE) SOT-523 U nit m m Features +0. 1 1.6 -0. 1 +0.1 1.0 -0.1 Repetitive peak off-state voltages 50V +0.05 0.2 -0.05 0.1+0.01 -0.01 The bias resistors consist of thinfilm resistors with complete isolation 2 1 to allow negative biasing of the input. Only the on/off conditions need to 3 +0.25 be set fo
chdtc114eegp.pdf
CHENMKO ENTERPRISE CO.,LTD CHDTC114EEGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 50 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation cu
chdtc114ekpt.pdf
CHENMKO ENTERPRISE CO.,LTD CHDTC114EKPT SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 50 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-59/SOT-346) SC-59/SOT-346 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation cu
chdtc114ekgp.pdf
CHENMKO ENTERPRISE CO.,LTD CHDTC114EKGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 50 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (/SOT-23) SOT-23 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabil
chdtc114eugp.pdf
CHENMKO ENTERPRISE CO.,LTD CHDTC114EUGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 50 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-70/SOT-323) SC-70/SOT-323 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation cu
dtc114ee.pdf
DTC114EE NPN Silicon Epitaxial Planar Digital Transistor Collector Features (Output) With built-in bias resistors R1 Base Simplify circuit design (Input) Reduce a quantity of parts and R2 manufacturing process Emitter (Common) Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Emitter Voltage VCEO 50 V Input Voltage VI - 10 to +
dtc114eua.pdf
RoHS COMPLIANT DTC114EUA Digital Transistors (Built-in Resistors) Features Epoxy meets UL-94 V-0 flammability rating Moisure Sensitivity Level 1 Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors Surface mount package ideally Suited for Automatic Insertion NPN Mechanical Data ackage SOT
Другие транзисторы: DTC114EET1G, DTC114EKAFRA, DTC114EM3, DTC114EM3T5G, DTC114EMFHA, DTC114EN3, DTC114ES3, DTC114EUAFRA, TIP41, DTC114TEB, DTC114TEFRA, DTC114TET1G, DTC114TKAFRA, DTC114TM3, DTC114TM3T5G, DTC114TMFHA, DTC114TN3
History: DTA123TET1G | DTC114TEFRA
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