Биполярный транзистор DTC115EET1G - описание производителя. Основные параметры. Даташиты.
Наименование производителя: DTC115EET1G
Маркировка: 8N
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 100 kOhm
Встроенный резистор цепи смещения R2 = 100 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 80
Корпус транзистора: SOT-416
Аналоги (замена) для DTC115EET1G
DTC115EET1G Datasheet (PDF)
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DTC114EET1 Series,SDTC114EET1 SeriesBias Resistor TransistorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlehttp://onsemi.comdevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkconsisting of two r
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DISCRETE SEMICONDUCTORS DATA SHEETPDTC115E seriesNPN resistor-equipped transistors; R1 = 100 k, R2 = 100 kProduct data sheet 2004 Aug 06Supersedes data of 2004 Apr 06NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC115E seriesR1 = 100 k, R2 = 100 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNI
dtc115eeb.pdf
100mA / 50V Digital transistors (with built-in resistors) DTC115EEB Applications Dimensions (Unit : mm) EMT3FInverter, Interface, Driver Features 1) Built-in bias resistors enable the configuration of (3)an inverter circuit without connecting external input resistors (see equivalent circuit). 2) Each bias resistor is a thin-film resistor. Since they are completely insu
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DTC115E seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCC50VIC(MAX.)100mA R1100kDTC115EM DTC115EEBR2 (SC-105AA) (SC-89)100k EMT3 UMT3lFeaturesl1) Built-In Biasing Resistors, R1 = R2 = 100k 2) Built-in bias resistors enable the configuration of
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DDTC (R1 = R2 SERIES) EE NPN PRE-BIASED TRANSISTOR IN SOT523 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT523 Complementary PNP Types Available (DDTA) Case Material: Molded Plastic, Green Molding Compound Built-In Biasing Resistors, R1 = R2 UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes
ddtc115ee.pdf
DDTC (R1 = R2 SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-523 Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1 = R2 Dim Min Max Typ B C Lead Free/RoHS Compliant (Note 1) TOP VIEWA 0.15 0.30 0.22 "Green" Device (Note 3 and 4) B 0.75 0.85 0.80 C 1.45 1.75 1.60 M
chdtc115eegp.pdf
CHENMKO ENTERPRISE CO.,LTDCHDTC115EEGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 20 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT-416)SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation c
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Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050