DTC115EET1G Specs and Replacement
Type Designator: DTC115EET1G
SMD Transistor Code: 8N
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 100 kOhm
Built in Bias Resistor R2 = 100 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 80
Package: SOT-416
DTC115EET1G Substitution
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DTC115EET1G datasheet
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DTC114EET1 Series, SDTC114EET1 Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single http //onsemi.com device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two r... See More ⇒
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DISCRETE SEMICONDUCTORS DATA SHEET PDTC115E series NPN resistor-equipped transistors; R1 = 100 k , R2 = 100 k Product data sheet 2004 Aug 06 Supersedes data of 2004 Apr 06 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; PDTC115E series R1 = 100 k , R2 = 100 k FEATURES QUICK REFERENCE DATA Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNI... See More ⇒
100mA / 50V Digital transistors (with built-in resistors) DTC115EEB Applications Dimensions (Unit mm) EMT3F Inverter, Interface, Driver Features 1) Built-in bias resistors enable the configuration of (3) an inverter circuit without connecting external input resistors (see equivalent circuit). 2) Each bias resistor is a thin-film resistor. Since they are completely insu... See More ⇒
Detailed specifications: DTC114YM3, DTC114YM3T5G, DTC114YMFHA, DTC114YN3, DTC114YS3, DTC114YUAFRA, DTC115EC3, DTC115EEFRA, 2SC4793, DTC115EKAFRA, DTC115EM3, DTC115EM3T5G, DTC115EMFHA, DTC115EN3, DTC115EUAFRA, DTC115EY3, DTC115TC3
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