DTC115EET1G Datasheet and Replacement
Type Designator: DTC115EET1G
SMD Transistor Code: 8N
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 100 kOhm
Built in Bias Resistor R2 = 100 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SOT-416
DTC115EET1G Substitution
DTC115EET1G Datasheet (PDF)
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DTC114EET1 Series,SDTC114EET1 SeriesBias Resistor TransistorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlehttp://onsemi.comdevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkconsisting of two r
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Datasheet: DTC114YM3 , DTC114YM3T5G , DTC114YMFHA , DTC114YN3 , DTC114YS3 , DTC114YUAFRA , DTC115EC3 , DTC115EEFRA , MJE340 , DTC115EKAFRA , DTC115EM3 , DTC115EM3T5G , DTC115EMFHA , DTC115EN3 , DTC115EUAFRA , DTC115EY3 , DTC115TC3 .
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