2SA1027 - описание и поиск аналогов

2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020 Power Amplifier Applications Unit mm Power Switching Applications Low Collector saturation voltage VCE (sat) = -0.5 V (max) (IC = -1 A) High collector power dissipation PC = 900 mW High-speed switching tstg = 1.0 s (typ.) Complementary to 2SC2655 Absolute Maximum Ratings (Ta = 2

2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020 Power Amplifier Applications Unit mm Power Switching Applications Low Collector saturation voltage VCE (sat) = -0.5 V (max) (IC = -1 A) High collector power dissipation PC = 900 mW High-speed switching tstg = 1.0 s (typ.) Complementary to 2SC2655 Absolute Maximum Ratings (Ta = 2

MCC Micro Commercial Components TM 2SA1020L-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1020L-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" Collector of 0.9Watts of Power Dissipation. PNP Collector-current -2.0A Plastic-Encapsulate Operating and storage junction tempe

MCC Micro Commercial Components TM 2SA1020-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1020-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Collector of 0.9Watts of Power Dissipation. PNP Collector-current -2.0A Plastic-Encapsulate Operating and storage junction temperature range -55 to +150 Epoxy meets UL 94 V-0 flammabilit

MCC Micro Commercial Components TM 2SA1020-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1020-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Collector of 0.9Watts of Power Dissipation. PNP Collector-current -2.0A Plastic-Encapsulate Operating and storage junction temperature range -55 to +150 Epoxy meets UL 94 V-0 flammabilit

MCC Micro Commercial Components TM 2SA1020L-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1020L-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" Collector of 0.9Watts of Power Dissipation. PNP Collector-current -2.0A Plastic-Encapsulate Operating and storage junction tempe

2SA1020 One Watt High Current PNP Transistor Features This is a Pb-Free Device* http //onsemi.com MAXIMUM RATINGS VOLTAGE AND CURRENT Rating Symbol Value Unit ARE NEGATIVE FOR Collector-Emitter Voltage VCE 50 Vdc PNP TRANSISTORS Collector-Base Voltage VCB 50 Vdc Emitter-Base Voltage VEB 5.0 Vdc COLLECTOR Collector Current - Continuous IC 2.0 Adc 2 Total Power Dissipation @

2SA1020 One Watt High Current PNP Transistor Features This is a Pb-Free Device* http //onsemi.com MAXIMUM RATINGS VOLTAGE AND CURRENT Rating Symbol Value Unit ARE NEGATIVE FOR Collector-Emitter Voltage VCE 50 Vdc PNP TRANSISTORS Collector-Base Voltage VCB 50 Vdc Emitter-Base Voltage VEB 5.0 Vdc COLLECTOR Collector Current - Continuous IC 2.0 Adc 2 Total Power Dissipation @

Transistor 2SA1022 Silicon PNP epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SC2295 +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 High transition frequency fT. Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine packing. 3 2 Absolute Maximum Ratings

Transistor 2SA1022 Silicon PNP epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SC2295 +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 High transition frequency fT. Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine packing. 3 2 Absolute Maximum Ratings

UNISONIC TECHNOLOGIES CO., LTD 2SA1020 PNP SILICON TRANSISTOR 3 SILICON PNP EPITAXIAL TRANSISTOR 2 1 1 SOT-23 SOT-89 (JEDEC TO-236) DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications. 1 TO-92 FEATURES *Low collector saturation voltage VCE(SAT)=-0.5V(MAX) (IC= -1A) *High speed switching time tSTG=1.0 s(TYP) 1 *C

2SA1029, 2SA1030 Silicon PNP Epitaxial Application Low frequency amplifier Complementary pair with 2SC458 and 2SC2308 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1029, 2SA1030 Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SA1029 2SA1030 Unit Collector to base voltage VCBO 30 55 V Collector to emitter voltage VCEO 30 50 V Emitter to base

2SA1025, 2SA1081, 2SA1082 Silicon PNP Epitaxial Application Low frequency amplifier Complementary pair with 2SC2396, 2SC2543 and 2SC2544 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1025, 2SA1081, 2SA1082 Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SA1025 2SA1081 2SA1082 Unit Collector to base voltage VCBO 60 90 120 V Collector to emitter

2SA1020 -2A, -50V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92MOD FEATURES N Power amplifier applications G H Emitter Collector Base CLASSIFICATION OF hFE(1) M J L Product-Rank 2SA1020-O 2SA1020-Y A D Range 70-140 120-240 B K E F C Collector

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TRANSISTOR (PNP) 1. EMITTER Power mplifier pplications 2. COLLECTOR 3. BASE Equivalent Circuit

JMnic Product Specification Silicon PNP Power Transistors 2SA1021 DESCRIPTION With TO-126 package High breakdown voltage Large current capacity APPLICATIONS For color TV sound output;converters Inverters applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITI

2SA1020 TO-92L Transistor (PNP) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 2 3 1 4.700 Features 5.100 Power amplifier applications 7.800 8.200 MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.600 Symbol Parameter Value Units 0.800 VCBO Collector-Base Voltage -50 V 0.350 0.550 VCEO Collector-Emitter Voltage -50 V 13.800 14.200 VEBO Emitter-Base Voltage -5 V IC

2SA1020 TO-92MOD Transistor (PNP) TO-92MOD 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE Features 5.800 6.200 Power amplifier applications MAXIMUM RATINGS (TA=25 unless otherwise noted) 8.400 8.800 Symbol Parameter Value Units 0.900 1.100 VCBO Collector-Base Voltage -50 V 0.400 0.600 VCEO Collector-Emitter Voltage -50 V 13.800 VEBO Emitter-Base Voltage -5 V 14.20

2SA1020 PNP 2 1 3 2 3 1. EMITTER 2. COLLECTOR 1 3. BASE TO-92MOD Value V CEO -50 -50 -5 -2,0 900 1 7.25 138 2SA1020=A1020 -10 -50 u -0.1 -40 -0.1 u -5.0 1 WEITRON http //www.weitron.com.tw 2SA1020 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Typ Symbol Max Unit Min ON CHARACTERISTICS DC Current Gain - - (IC=-5

2SA1020 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-92LM PNP Silicon PNP transistor in a TO-92LM Plastic Package. / Features , , 2SC2655 Low collector saturation voltage high speed switching time, complementary pair with 2SC2655. / Applications ,

SMD Type Transistors PNP Transistors 2SA1020 1.70 0.1 Features Collector Current Capability IC=-2A Collector Emitter Voltage VCEO=-50V Complementary to 2SC2655 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 V Emitter -

SMD Type Transistors PNP Transistors 2SA1022 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features 3 High transition frequency fT. Complementary to 2SC2295 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Vol

CHENMKO ENTERPRISE CO.,LTD 2SA1020GP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 50 Volts CURRENT 0.5 Ampere APPLICATION * Power amplifier . FEATURE * Small flat package. (SOT-23) SOT-23 * Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-0.5A) * High speed switching time tstg= 1.0uSec (typ.) * High saturation current capability. (1) (3) CONSTRUCTION (2) * PNP Switching Transi

2SA1020I(3CG1020I) PNP /SILICON PNP TRANSISTOR , Purpose Power amplifier and switching applications. , , 2SC2655I(3DG2655I) Features Low collector saturation voltage high speed switching time, complementary pair with 2SC2655I(3DG2655I). /Absolute maximum rating

isc Silicon PNP Power Transistor 2SA1028 DESCRIPTION High Current Capability Good Linearity of h FE Collector-Emitter Breakdown Voltage- V = -100V(Min.) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

isc Silicon PNP Power Transistor 2SA1021 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -150V (Min) (BR)CEO Complement to Type 2SC2481 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV vertical deflection output applications. Color TV class B sound output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMB