Биполярный транзистор MMUN2137LT1G - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MMUN2137LT1G
Маркировка: ACD
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 47 kOhm
Встроенный резистор цепи смещения R2 = 22 kOhm
Соотношение сопротивлений R1/R2 = 2.1
Максимальная рассеиваемая мощность (Pc): 0.246 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 80
Корпус транзистора: SOT-23
Аналоги (замена) для MMUN2137LT1G
MMUN2137LT1G Datasheet (PDF)
mmun2137l mmun2137lt1g mun2137.pdf
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nsvmmun2132lt1g.pdf
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mmun2135.pdf
MMUN2135Bias Resistor TransistorCOLLECT OR33PNP Silicon R 11BASER 2122EMITTERSOT-23( T =25 C unless otherwise noted)Maximum Ratings ARating Symbol Value UnitCollector-Emitter Voltage V 50CEO VdcVdcCollector-Base Voltage VCBO 50Collector Current-Continuous IC mAdc100Thermal CharacteristicsMax UnitCharacteristics SymbolTotal Device Dissipation F
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Список транзисторов
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