MUN2135T1G - аналоги и даташиты биполярного транзистора

 

MUN2135T1G - Даташиты. Аналоги. Основные параметры


   Наименование производителя: MUN2135T1G
   Маркировка: 6R
   Тип материала: Si
   Полярность: Pre-Biased-PNP
   Встроенный резистор цепи смещения R1 = 2.2 kOhm
   Встроенный резистор цепи смещения R2 = 47 kOhm
   Соотношение сопротивлений R1/R2 = 0.047
   Максимальная рассеиваемая мощность (Pc): 0.23 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 80
   Корпус транзистора: SC-59

 Аналоги (замена) для MUN2135T1G

 

MUN2135T1G Datasheet (PDF)

 ..1. Size:101K  onsemi
mmun2135l mmun2135lt1g mun2135 mun2135t1g.pdfpdf_icon

MUN2135T1G

MUN2135, MMUN2135L, MUN5135, DTA123JE, DTA123JM3, NSBA123JF3 Digital Transistors (BRT) R1 = 2.2 kW, R2 = 47 kW www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 This series of digital transistors is designed to replace a single COLLECTOR (OUTPUT) device and its external resistor bias network. The Bias Resistor PIN 1 R1 Transistor (BRT) co

 7.1. Size:117K  onsemi
nsvmmun2135lt1g.pdfpdf_icon

MUN2135T1G

MUN2135, MMUN2135L, MUN5135, DTA123JE, DTA123JM3, NSBA123JF3 Digital Transistors (BRT) R1 = 2.2 kW, R2 = 47 kW www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 This series of digital transistors is designed to replace a single COLLECTOR (OUTPUT) device and its external resistor bias network. The Bias Resistor PIN 1 R1 Transistor (BRT) co

 7.2. Size:210K  wietron
mmun2135.pdfpdf_icon

MUN2135T1G

MMUN2135 Bias Resistor Transistor COLLECT OR 3 3 PNP Silicon R 1 1 BASE R 2 1 2 2 EMITTER SOT-23 ( T =25 C unless otherwise noted) Maximum Ratings A Rating Symbol Value Unit Collector-Emitter Voltage V 50 CEO Vdc Vdc Collector-Base Voltage VCBO 50 Collector Current-Continuous IC mAdc 100 Thermal Characteristics Max Unit Characteristics Symbol Total Device Dissipation F

 7.3. Size:115K  lrc
lmun2135lt1g.pdfpdf_icon

MUN2135T1G

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors LMUN2135LT1G S-LMUN2135LT1G PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 This new series of digital transistors is designed to replace a single 1 device and its external resistor bias network. The BRT (Bias Resistor 2 Transistor) contains a single transistor with a monolithic bias network consisting

Другие транзисторы... MUN2131T1G , MUN2132 , MUN2132T1G , MUN2133 , MUN2133T1G , MUN2134 , MUN2134T1G , MUN2135 , D882P , MUN2136 , MUN2136T1G , MUN2137 , MUN2137T1G , MUN2138 , MUN2138T1G , MUN2140 , MUN2140T1G .

 

 
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