MUN2230T1G datasheet, аналоги, основные параметры

Наименование производителя: MUN2230T1G  📄📄 

Маркировка: 8G

Тип материала: Si

Полярность: Pre-Biased-NPN

Встроенный резистор цепи смещения R1 = 1 kOhm

Встроенный резистор цепи смещения R2 = 1 kOhm

Соотношение сопротивлений R1/R2 = 1

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.23 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 3

Корпус транзистора: SC-59

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MUN2230T1G даташит

 ..1. Size:218K  onsemi
 mun2211t1g mun2212t1g mun2213t1g mun2214t1g mun2215t1g mun2216t1g mun2230t1g mun2231t1g mun2232t1g mun2233t1g mun2234t1g mun2236t1g mun2237t1g mun2240t1g mun2241t1g.pdf pdf_icon

MUN2230T1G

MUN2211T1, SMUN2211T1, NSVMUN2211T1 Series Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http //onsemi.com This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor NPN SILICON Transistor) contains a single transistor with a monolithic bias network

 7.1. Size:95K  onsemi
 mmun2230l.pdf pdf_icon

MUN2230T1G

MUN2230, MMUN2230L, MUN5230, DTC113EE, DTC113EM3, NSBC113EF3 Digital Transistors (BRT) R1 = 1 kW, R2 = 1 kW www.onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (BRT)

 7.2. Size:110K  onsemi
 nsvmmun2230lt1g.pdf pdf_icon

MUN2230T1G

MUN2230, MMUN2230L, MUN5230, DTC113EE, DTC113EM3, NSBC113EF3 Digital Transistors (BRT) R1 = 1 kW, R2 = 1 kW www.onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (BRT)

 7.3. Size:215K  onsemi
 mmun2211lt1g mmun2211lt3g mmun2212lt1g mmun2213lt1g mmun2214lt1g mmun2215lt1g mmun2216lt1g mmun2230lt1g mmun2231lt1g mmun2232lt1g mmun2233lt1g mmun2234lt1g.pdf pdf_icon

MUN2230T1G

MMUN2211LT1G Series, SMMUN2211LT1G Series, NSVMMUN2232LT1G Bias Resistor Transistor NPN Silicon Surface Mount Transistor http //onsemi.com with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single PIN 3 device and its external resistor bias network. The BRT (Bias Resistor COLLECTOR R1 (OUTPUT) Transistor) contains a single transistor

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Другие транзисторы: MUN2141, MUN2141T1G, MUN2211T1G, MUN2212T1G, MUN2213T1G, MUN2214T1G, MUN2215T1G, MUN2216T1G, C1815, MUN2231T1G, MUN2232T1G, MUN2233T1G, MUN2234T1G, MUN2235, MUN2235T1G, MUN2236, MUN2236T1G