Биполярный транзистор MUN5112DW1 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MUN5112DW1
Маркировка: 0B
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 22 kOhm
Встроенный резистор цепи смещения R2 = 22 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.187 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 60
Корпус транзистора: SOT-363
Аналоги (замена) для MUN5112DW1
MUN5112DW1 Datasheet (PDF)
mun5112dw1.pdf
MUN5112DW1,NSBA124EDXV6,NSBA124EDP6Dual PNP Bias ResistorTransistorshttp://onsemi.comR1 = 22 kW, R2 = 22 kWPIN CONNECTIONSPNP Transistors with Monolithic BiasResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor wit
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