Биполярный транзистор MUN5116T1G Даташит. Аналоги
Наименование производителя: MUN5116T1G
Маркировка: 6F
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 4.7 kOhm
Максимальная рассеиваемая мощность (Pc): 0.202 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 160
Корпус транзистора: SOT-323
Аналог (замена) для MUN5116T1G
MUN5116T1G Datasheet (PDF)
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MUN5111T1G Series,SMUN5111T1G,NSVMUN5111T1G SeriesBias Resistor TransistorsPNP Silicon Surface Mount Transistorhttp://onsemi.comwith Monolithic Bias Resistor NetworkPNP SILICONThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorBIAS RESISTORTransistor (BRT) contains a single transistor with a
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mun5116dw1 nsba143tdxv6.pdf

MUN5116DW1,NSBA143TDXV6Dual PNP Bias ResistorTransistorsR1 = 4.7 kW, R2 = 8 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkThis series of digital transistors is designed to replace a single (3) (2) (1)device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monolithic biasR1 R
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MUN5111DW1T1G Series,SMUN5111DW1T1G SeriesDual Bias ResistorTransistorsPNP Silicon Surface Mount Transistorshttp://onsemi.comwith Monolithic Bias Resistor NetworkThe Bias Resistor Transistor (BRT) contains a single transistor with amonolithic bias network consisting of two resistors; a series base resistorand a base-emitter resistor. These digital transistors are designed to
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