MUN5131DW1 datasheet, аналоги, основные параметры

Наименование производителя: MUN5131DW1  📄📄 

Маркировка: 0H

Тип материала: Si

Полярность: Pre-Biased-PNP

Встроенный резистор цепи смещения R1 = 2.2 kOhm

Встроенный резистор цепи смещения R2 = 2.2 kOhm

Соотношение сопротивлений R1/R2 = 1

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.187 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 8

Корпус транзистора: SOT-363

  📄📄 Копировать 

 Аналоги (замена) для MUN5131DW1

- подборⓘ биполярного транзистора по параметрам

 

MUN5131DW1 даташит

 ..1. Size:100K  onsemi
mun5131dw1.pdfpdf_icon

MUN5131DW1

MUN5131DW1, NSBA123EDXV6 Dual PNP Bias Resistor Transistors R1 = 2.2 kW, R2 = 2.2 kW http //onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1) device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias

 0.1. Size:198K  onsemi
mun5111dw1t1g mun5112dw1t1g mun5113dw1t1g mun5114dw1t1g mun5115dw1t1g mun5116dw1t1g mun5130dw1t1g mun5131dw1t1g.pdfpdf_icon

MUN5131DW1

MUN5111DW1T1G Series, SMUN5111DW1T1G Series Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors http //onsemi.com with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to

 0.2. Size:918K  lrc
lmun5111dw1t1g lmun5112dw1t1g lmun5113dw1t1g lmun5114dw1t1g lmun5115dw1t1g lmun5116dw1t1g lmun5130dw1t1g lmun5131dw1t1g lmun5132dw1t1g.pdfpdf_icon

MUN5131DW1

LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors LMUN5111DW1T1G Series with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias S-LMUN5111DW1T1G network consisting of two resistors; a series base resistor and a base emitter resistor. These Series digital transistors are

 7.1. Size:109K  onsemi
nsvmun5131t1g.pdfpdf_icon

MUN5131DW1

MUN2131, MMUN2131L, MUN5131, DTA123EE, DTA123EM3, NSBA123EF3 Digital Transistors (BRT) R1 = 2.2 kW, R2 = 2.2 kW www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (B

Другие транзисторы: MUN5114T1G, MUN5115DW1T1G, MUN5115T1G, MUN5116DW1T1G, MUN5116T1G, MUN5130DW1, MUN5130DW1T1G, MUN5130T1G, MJE340, MUN5131DW1T1G, MUN5131T1G, MUN5132DW1, MUN5132DW1T1G, MUN5132T1G, MUN5133DW1T1G, MUN5133T1G, MUN5134DW1