Биполярный транзистор MUN5230DW1T1G - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MUN5230DW1T1G
Маркировка: 7G
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 1 kOhm
Встроенный резистор цепи смещения R2 = 1 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.187 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 3
Корпус транзистора: SOT-363
Аналоги (замена) для MUN5230DW1T1G
MUN5230DW1T1G Datasheet (PDF)
mun5211dw1t1g mun5212dw1t1g mun5213dw1t1g mun5214dw1t1g mun5215dw1t1g mun5216dw1t1g mun5230dw1t1g mun5231dw1t1g.pdf
MUN5211DW1T1G,SMUN5211DW1T1G,NSVMUN5211DW1T1G SeriesDual Bias ResistorTransistorshttp://onsemi.comNPN Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThe Bias Resistor Transistor (BRT) contains a single transistor withSOT-363a monolithic bias network consisting of two resistors; a series base CASE 419BSTYLE 1resistor and a base-emitter resistor. The
lmun5211dw1t1g lmun5212dw1t1g lmun5213dw1t1g lmun5214dw1t1g lmun5215dw1t1g lmun5216dw1t1g lmun5230dw1t1g lmun5231dw1t1g.pdf
LESHAN RADIO COMPANY, LTD.Dual Bias ResistorTransistorsLMUN5211DW1T1GNPN Silicon Surface Mount TransistorsSerieswith Monolithic Bias Resistor NetworkS-LMUN5211DW1T1GSeriesThe BRT (Bias Resistor Transistor) contains a single transistor with a monolithic biasnetwork consisting of two resistors; a series base resistor and a baseemitter resistor. These65digital transistor
mun5211t1g mun5212t1g mun5213t1g mun5214t1g mun5215t1g mun5216t1g mun5230t1g mun5231t1g mun5232t1g mun5233t1g mun5234t1g mun5235t1g mun5236t1g mun5237t1g.pdf
MUN5211T1G Series,SMUN5211T1G SeriesBias Resistor TransistorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor Networkhttp://onsemi.comThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorNPN SILICONTransistor) contains a single transistor with a monolithic bias networkconsis
lmun5211t1g lmun5212t1g lmun5213t1g lmun5214t1g lmun5215t1g lmun5216t1g lmun5230t1g lmun5231t1g lmun5232t1g lmun5233t1g lmun5234t1g lmun5235t1g lmun5237t1g.pdf
LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorLMUN5211T1GNPN Silicon Surface Mount TransistorSerieswith Monolithic Bias Resistor Network3This new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias Resistor1Transistor) contains a single transistor with a monolithic bias network con- 2sisting of two r
Другие транзисторы... HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 2222A , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050