MUN5234DW1T1G datasheet, аналоги, основные параметры

Наименование производителя: MUN5234DW1T1G  📄📄 

Маркировка: 7L

Тип материала: Si

Полярность: Pre-Biased-NPN

Встроенный резистор цепи смещения R1 = 22 kOhm

Встроенный резистор цепи смещения R2 = 47 kOhm

Соотношение сопротивлений R1/R2 = 0.47

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.187 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 80

Корпус транзистора: SOT-363

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MUN5234DW1T1G

MUN5234DW1, NSBC124XDXV6 Dual NPN Bias Resistor Transistors R1 = 22 kW, R2 = 47 kW http //onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single transistor with a monolithic

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MUN5234DW1T1G

MUN5211T1G Series, SMUN5211T1G Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network http //onsemi.com This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor NPN SILICON Transistor) contains a single transistor with a monolithic bias network consis

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MUN5234DW1T1G

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor LMUN5211T1G NPN Silicon Surface Mount Transistor Series with Monolithic Bias Resistor Network 3 This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor 1 Transistor) contains a single transistor with a monolithic bias network con- 2 sisting of two r

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