MUN5331DW1 datasheet, аналоги, основные параметры
Наименование производителя: MUN5331DW1 📄📄
Маркировка: 31
Тип материала: Si
Полярность: Pre-Biased-NPN*PNP
Встроенный резистор цепи смещения R1 = 2.2 kOhm
Встроенный резистор цепи смещения R2 = 2.2 kOhm
Соотношение сопротивлений R1/R2 = 1
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.187 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Статический коэффициент передачи тока (hFE): 8
Корпус транзистора: SOT-363
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Аналоги (замена) для MUN5331DW1
- подборⓘ биполярного транзистора по параметрам
MUN5331DW1 даташит
mun5331dw1.pdf
MUN5331DW1, NSBC123EPDXV6 Complementary Bias Resistor Transistors R1 = 2.2 kW, R2 = 2.2 kW http //onsemi.com NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1) device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a mo
mun5311dw1t1g mun5312dw1t1g mun5313dw1t1g mun5314dw1t1g mun5315dw1t1g mun5316dw1t1g mun5330dw1t1g mun5331dw1t1g mun5332dw1t1g mun5333dw1t1g mun5334dw1t1g mun5335dw1t1g.pdf
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series Dual Bias Resistor Transistors http //onsemi.com http //onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network SOT-363 CASE 419B The Bias Resistor Transistor (BRT) contains a single transistor with STYLE 1 a monolithic bias network consisting of two resistors; a series base resistor and
nsvmun5331dw1t1g.pdf
MUN5331DW1, NSBC123EPDXV6 Complementary Bias Resistor Transistors R1 = 2.2 kW, R2 = 2.2 kW http //onsemi.com NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1) device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a mo
mun5330dw1 nsbc113epdxv6.pdf
MUN5330DW1, NSBC113EPDXV6 Complementary Bias Resistor Transistors R1 = 1 kW, R2 = 1 kW http //onsemi.com NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1) device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monoli
Другие транзисторы: MUN5241T1G, MUN5311DW1T1G, MUN5312DW1T1G, MUN5313DW1T1G, MUN5314DW1T1G, MUN5315DW1T1G, MUN5316DW1T1G, MUN5330DW1T1G, C1815, MUN5331DW1T1G, MUN5332DW1T1G, MUN5333DW1T1G, MUN5334DW1T1G, MUN5335DW1T1G, MUN5336DW1, MUN5336DW1T1G, PBRN113EK
Параметры биполярного транзистора и их взаимосвязь
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